AVALANCHE PHOTODETECTION DEVICE, ELECTRONIC DEVICE, AND LiDAR DEVICE

1 . An avalanche photodetection device comprising:

A photodetection layer,

wherein the photodetection layer includes a first well, a heavily doped region provided on the first well, and an anode contact spaced apart from the heavily doped region,

wherein a conductivity type of the first well and the anode contact is p-type,

wherein a conductivity type of the heavily doped region is n-type,

wherein the heavily doped region is configured to be biased with a positive bias;

wherein the anode contact is configured to output a signal.

2 . The avalanche photodetection device of claim 1 , wherein the anode contact surrounds the heavily doped region.

3 . The avalanche photodetection device of claim 1 , wherein the photodetection layer further includes a second well provided between the first well and the heavily doped region,

wherein a conductivity type of the second well is n-type,

wherein a doping concentration of the second well is lower than a doping concentration of the heavily doped region,

wherein the first well and the second well are directly contact with each other to form a depletion region.

4 . The avalanche photodetection device of claim 3 , wherein the second well extends to a region between the heavily doped region and the anode contact.

5 . The avalanche photodetection device of claim 4 , wherein the first well extends to a region between the second well and the anode contact.

6 . The avalanche photodetection device of claim 1 , wherein the photodetection layer further includes a relief region directly contacting the contact,

wherein a conductivity type of the relief region is p-type,

wherein a doping concentration of the relief region is lower than a doping concentration of the contact and higher than a doping concentration of the first well.

7 . The avalanche photodetection device of claim 6 , wherein the photodetection layer further includes an additional relief region provided on a bottom surface of the relief region,

wherein a conductivity type of the additional relief region is p-type,

wherein the additional relief region is formed to a position deeper than the first well.

8 . The avalanche photodetection device of claim 1 , wherein the photodetection layer further includes a guard ring extending from a region on a side surface of the heavily doped region to a region on a side surface of the first well,

wherein a conductivity type of the guard ring is n-type,

wherein a doping concentration of the guard ring is lower than a doping concentration of the heavily doped region.

9 . The avalanche photodetection device of claim 1 , further comprising:

a control layer provided on the photodetection layer,

wherein the control layer includes a first circuit configured to bias the heavily doped region, and a second circuit configured to output the signal from the contact.

10 . The avalanche photodetection device of claim 9 , further comprising:

a connection layer provided between the control layer and the photodetection layer,

wherein the connecting layer includes a first conductive line configured to electrically connect the heavily doped region and the first circuit, and a second conductive line configured to electrically connect the anode contact and the second circuit.

11 . An electronic device comprising:

an avalanche photodetection device including a photodetection layer,

wherein the photodetection layer includes a first well, a heavily doped region provided on the first well, and an anode contact spaced apart from the heavily doped region,

wherein the first well and the anode contact have a p-type conductivity type, the heavily doped region has an n-type conductivity, the heavily doped region is configured to be biased with a positive bias, and the anode contact is configured to output a signal.

12 . A LiDAR device comprising:

an electronic device including an avalanche photodetection device,

wherein the avalanche photodetection device includes a photodetection layer,

wherein the photodetection layer includes a first well, a heavily doped region provided on the first well, and an anode contact spaced apart from the heavily doped region,

wherein the first well and the anode contact have a p-type conductivity type, the heavily doped region has an n-type conductivity, the heavily doped region is configured to be biased with a positive bias, and the anode contact is configured to output a signal.