System and method for radio frequency power sensing and scavenging based on phonon-electron coupling in acoustic waveguides
View Patent ↗A system and method for converting a radio frequency (RF) to a direct current (DC) signal by generating acoustic phonons from the received RF signal utilizing a piezoelectric material. The acoustic phonons of the RF signal interact with the electrons of a semiconductive material to generate a DC signal that is proportional to the power of the RF signal. The DC signal can be used to power devices or can be interpreted as a measure of a local RF frequency spectrum.
1. An acoustoelectric RF-to-DC converter comprising:
an input port for receiving a radio frequency (RF) signal; and
an acoustic waveguide coupled to the input port, the acoustic waveguide comprising a piezoelectric layer and a semiconductor layer adjacent to the piezoelectric layer, wherein the piezoelectric transduces the RF signal into an acoustic signal and the acoustic signal interacts with the semiconductor layer to generate a direct current (DC) signal that is proportional to a power of the RF signal.
2. The acoustoelectric RF-to-DC converter of claim 1 , wherein the input port comprises at least one RF input port electrode and wherein a configuration of the at least one RF input port electrode determines a desired frequency range for the RF-to-DC conversion.
3. The acoustoelectric RF-to-DC converter of claim 1 , wherein a periodicity of the at least one RF input port electrode determines a center frequency for the RF-to-DC conversion.
4. The acoustoelectric RF-to-DC converter of claim 1 , wherein a number of fingers of the at least one RF input port electrode determines a frequency bandwidth for the RF-to-DC conversion.
5. The acoustoelectric RF-to-DC converter of claim 1 , wherein an angle of a plurality of fingers of the at least one RF input port electrode determines a frequency bandwidth for the RF-to-DC conversion.
6. The acoustoelectric RF-to-DC converter of claim 1 , wherein the piezoelectric layer is comprised of one or more of lithium niobate, III-V compounds such as aluminum scandium nitride, lead zirconate titanate (PZT) and lead magnesium niobate-lead titanate (PMN-PT).
7. The acoustoelectric RF-to-DC converter of claim 1 , wherein the acoustic waveguide is suspended.
8. The acoustoelectric RF-to-DC converter of claim 1 wherein the acoustic waveguide is solidly mounted.
9. The acoustoelectric RF-to-DC converter of claim 1 , wherein the semiconductor layer is comprised of one or more of silicon, germanium, III-V compounds and two-dimensional materials.
10. A method for converting an RF signal to a DC signal, the method comprising:
receiving an RF signal at an input port of an acoustic waveguide, wherein the acoustic waveguide comprises a piezoelectric layer and a semiconductor layer adjacent to the piezoelectric layer;
transducing the RF signal into an acoustic signal at the piezoelectric layer; and
allowing the acoustic signal to interact with the semiconductor layer to generate a DC signal that is proportional to a power of the RF signal.
11. The method of claim 9 , wherein the input port comprises at least one RF input port electrode and wherein a configuration of the at least one RF input port electrode determines a desired frequency range for the RF-to-DC conversion.
12. The method of claim 9 , wherein a periodicity of the at least one RF input port electrode determines a center frequency for the RF-to-DC conversion.
13. The method of claim 9 wherein a number of fingers of the at least one RF input port electrode determines a frequency bandwidth for the RF-to-DC conversion.
14. The method of claim 9 , wherein an angle of a plurality of fingers of the at least one RF input port electrode determines a frequency bandwidth for the RF-to-DC conversion.
15. The method of claim 9 , further comprising providing the DC signal to a wireless device to wake up or power the wireless device.
16. The method of claim 9 , further comprising using the DC signal to sense a frequency spectrum surrounding a wireless device.
17. The method of claim 14 , wherein the wireless device is an IoT device.
18. The method of claim 9 , wherein the piezoelectric layer is comprised of one or more of lithium niobate, III-V compounds such as aluminum scandium nitride, lead zirconate titanate (PZT) and lead magnesium niobate-lead titanate (PMN-PT).
19. The method of claim 9 , wherein the semiconductor layer is comprised of one or more of silicon, germanium, III-V compounds and two-dimensional materials.
20. A method for performing spectrum sensing, the method comprising:
receiving an RF signal at an input port of each acoustic waveguide of an array of acoustic waveguides, wherein each acoustic waveguide of the array of acoustic waveguides comprises a piezoelectric layer, a semiconductor layer adjacent to the piezoelectric layer and an RF input port electrode and wherein the RF input port electrode of each of the acoustic waveguides of the array of acoustic waveguides is configured to be sensitive to a different RF frequency;
transducing the RF signal received at each of the acoustic waveguides into an acoustic signal at the piezoelectric layer of the respective acoustic waveguide;
allowing the acoustic signal to interact with the semiconductor layer of the respective acoustic waveguide to generate a DC signal that is proportional to a power of the RF signal; and
performing spectrum sensing based upon the DC signals generated by each of the acoustic waveguides of the array of acoustic waveguides.