Schottky rectifier with surge-current ruggedness

1. A Schottky rectifier device, comprising:

a Silicon Carbide (SiC) layer;

a channel region of a first conductivity type formed on the SiC layer;

a metal contact formed on the channel region;

a multi-layer body of a second conductivity type formed within the channel region and extending in a direction of the SiC layer, the multi-layer body including a first layer having a first doping concentration, a second layer adjacent to the first layer and having a second doping concentration less than the first doping concentration, and a third layer adjacent to the second layer and having a third doping concentration less than the second doping concentration, wherein the metal contact extends over an active region of the Schottky rectifier device that includes the channel region and the multi-layer body;

a charge-balanced region that includes the third layer and a portion of the channel region adjacent to the third layer;

a p-n diode rim that surrounds the active region with a continuous body of the second conductivity type and an array of deep rim bodies of the second conductivity type that are parallel to the multi-layer body; and

a junction termination region outside of the p-n diode rim that includes a junction termination (JT) body surrounding the p-n diode rim and connected to a plurality of deep JT bodies extending parallel to the multi-layer body and the deep rim bodies.

2. The Schottky rectifier device of claim 1 , wherein the second layer has a doping concentration between 1×10 18 cm −3 and 1×10 19 cm −3 .

3. The Schottky rectifier device of claim 1 , wherein, within the charge-balanced region, charges of non-compensated acceptors and donors in the third layer and the portion of the channel region have a deviation of approximately 1×10 13 cm −2 or lower.

4. The Schottky rectifier device of claim 1 , wherein the first layer is degenerately doped and provides a tunnel contact between the metal contact and the second layer.

5. The Schottky rectifier device of claim 1 , wherein the multi-layer body extends at least thirty percent of a distance between the metal contact and the SiC layer.

6. The Schottky rectifier device of claim 1 , wherein the metal contact overlaps the active region and at least a portion of the p-n diode rim.

7. The Schottky rectifier device of claim 1 , wherein a width of each of the plurality of deep JT bodies decreases with distance from the p-n diode rim.

8. The Schottky rectifier device of claim 1 , wherein the multi-layer body extends to the SiC layer.

9. A method of making a Schottky rectifier device, the method comprising:

forming a Silicon Carbide (SiC) substrate;

forming an epitaxial layer of a first conductivity type on the SiC substrate;

forming a portion of a charge-balancing body having donors of a second conductivity type;

repeating the forming of the epitaxial layer and the forming the portion of the charge-balancing body until the charge-balancing body reaches a specified thickness;

forming an injection layer on the charge-balancing body, the injection layer having a doping concentration of the second conductivity type that is higher than a doping concentration of the charge-balancing body;

forming a contact layer on the injection layer;

forming a metal contact over the contact layer and the epitaxial layer, wherein the metal contact extends over an active region of the Schottky rectifier device that includes a surrounding epitaxial region of the epitaxial layer and the charge-balancing body;

forming a p-n diode rim that surrounds the active region with a continuous body of the second conductivity type and an array of deep rim bodies of the second conductivity type that are parallel to the charge-balancing body; and

forming a junction termination region outside of the p-n diode rim that includes a junction termination (JT) body surrounding the p-n diode rim and connected to a plurality of deep JT bodies extending parallel to the charge-balancing body and the deep rim bodies.

10. The method of claim 9 , wherein

the contact layer, the injection layer, and the charge-balancing body extend at least thirty percent of a distance from the metal contact to the SiC substrate.

11. The method of claim 9 , wherein the contact layer has a doping concentration that is higher than the doping concentration of the injection layer.

12. The method of claim 9 , wherein, within a charge-balanced region that includes the charge-balancing body and the surrounding epitaxial region, charges of non-compensated acceptors and donors in the charge-balancing body and the surrounding epitaxial region have a deviation of approximately 1×10 13 cm −2 or lower.

13. A Schottky rectifier device, comprising:

a Silicon Carbide (SiC) layer;

a channel region of a first conductivity type formed on the SiC layer;

a metal contact formed on the channel region;

a multi-layer body of a second conductivity type formed within the channel region and extending in a direction of the SiC layer, the multi-layer body including a tunnel contact layer, an injection layer adjacent to the tunnel contact layer, and a deep layer adjacent to the injection layer, wherein the metal contact extends over an active region of the Schottky rectifier device that includes the channel region and the multi-layer body;

a charge-balanced region that includes the deep layer and a portion of the channel region adjacent to the deep layer;

a p-n diode rim that surrounds the active region with a continuous body of the second conductivity type and an array of deep rim bodies of the second conductivity type that are parallel to the multi-layer body; and

a junction termination region outside of the p-n diode rim that includes a junction termination (JT) body surrounding the p-n diode rim and connected to a plurality of deep JT bodies extending parallel to the multi-layer body and the deep rim bodies.

14. The Schottky rectifier device of claim 13 , wherein, within the charge-balanced region, charges of non-compensated acceptors and donors in the deep layer and the portion of the channel region have a deviation of approximately 1×10 13 cm −2 or lower, and further wherein the multi-layer body extends at least thirty percent of a distance from the tunnel contact layer to the SiC layer.

15. The Schottky rectifier device of claim 14 , comprising a silicide Ohmic contact between the tunnel contact layer and the metal contact.

16. The Schottky rectifier device of claim 13 , wherein the multi-layer body extends an entire distance from the metal contact to the SiC layer.