Methods and apparatus for measuring analytes
Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions.
1. A semiconductor device comprising:
an array of a chemically-sensitive field effect transistor (chemFET) sensors, each chemFET sensor in the array of chemFET sensors including a floating gate conductor with an upper surface;
an array of microwells capacitively coupled over the array of chemFET sensors, each microwell in the array of microwells a reaction chamber containing an analyte fluid with an operating pH of between about pH 6 to about pH 9.5; and
a conductive element contacting the upper surface of each floating gate conductor of each chemFET sensor in the array of chemFET sensors and contacting at least a portion of each sidewall of each microwell in the array of microwells.
2. The semiconductor device of claim 1 , wherein the conductive element has a has a point of zero charge that matches the operating pH of the analyte fluid.
3. The semiconductor device of claim 1 , wherein the array of chemFET sensors is at least 10 7 sensors.
4. The semiconductor device of claim 1 , wherein the array of chemFET sensors has a pitch of 10 μm or less.
5. The semiconductor device of claim 1 , wherein the conductive element comprises a metal, a metal oxide, a metal nitride or a metal oxynitride, and combinations thereof.
6. The semiconductor device of claim 5 , wherein the metal of the conductive element comprises aluminum, zirconium, titanium, tantalum, molybdenum, hafnium or tungsten, and combinations thereof.
7. The semiconductor device of claim 6 , wherein a native oxide is formed on the metal comprising the conductive element.
8. The semiconductor device of claim 1 , wherein the conductive surface is a sensing surface.
9. The semiconductor device of claim 8 , wherein the sensing surface is sensitive to hydrogen ions.
10. The semiconductor device of claim 8 , wherein the sensing surface is sensitive to pyrophosphate or phosphate ions.
11. The semiconductor device of claim 1 , wherein a buffering inhibitor is disposed on one of a sidewall surface and a lower surface of the reaction chamber.
12. The semiconductor device of claim 1 , wherein each chemFET sensor in the array of sensors is configured to provide an output signal dependent on a threshold voltage.
13. The semiconductor device of claim 1 , wherein a range of threshold voltage changes is between approximately 0 to 2 volts.
14. A chemical analysis apparatus comprising:
the semiconductor device of claim 1 ; and
a reference electrode configured to provide a stable reference potential for each sensor in the array of chemFET sensors.
15. The chemical analysis apparatus of claim 14 , wherein the reference electrode is configured to provide a stable reference potential for setting an initial output voltage of each sensor in the array of chemFET sensors at a desired reference level.
16. The chemical analysis apparatus of claim 15 , wherein the initial output voltage of each sensor in the array of chemFET sensors at the desired reference level is determined at an operating pH of the analyte fluid.
17. The chemical analysis apparatus of claim 14 , wherein an output signal for each sensor in the chemFET sensor array is a voltage signal measured in reference to the reference electrode.
18. The chemical analysis apparatus of claim 17 , wherein a range of output voltages is between about 0.5 volts to about 2.5 volts.
19. The chemical analysis apparatus of claim 14 , wherein the reference electrode is grounded.
20. The chemical analysis apparatus of claim 14 , wherein the reference electrode is a hollow electrically conductive tube.