Semiconductor device

1 . A semiconductor device comprising:

a first gate electrode;

a first gate insulating film in contact with the first gate electrode;

an oxide semiconductor layer in contact with the first gate insulating film; and

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer,

wherein

the source electrode and the drain electrode are either an electrode consisting of copper (Cu) containing manganese (Mn), an electrode having a layered structure of layers containing copper and titanium (Ti), or an electrode having a layered structure of layers containing titanium and aluminum (Al), and

the first gate electrode includes a hydrogen-absorbing alloy including at least one selected from palladium (Pd) and Vanadium (V).

2 . The semiconductor device according to claim 1 , further comprising,

electrode pads between the source electrode and the drain electrode and the oxide semiconductor layer, respectively,

wherein:

the source electrode and the drain electrode include titanium and aluminum, and

a thickness of the source electrode and the drain electrode is greater than a thickness of the electrode pads.

3 . The semiconductor device according to claim 1 ,

wherein:

the source electrode and the drain electrode have a layered structure of two or more layers,

the layered structure has a first layer closest to the oxide semiconductor layer and a second layer farthest from the oxide semiconductor layer, and

a thickness of the first layer is greater than a thickness of the second layer.

4 . The semiconductor device according to claim 3 ,

wherein:

the layered structure has a third layer between the first layer and the second layer,

the first layer and the second layer include titanium, and

the third layer contains aluminum.

5 . The semiconductor device according to claim 1 , further comprising,

a first insulating film in contact with the oxide semiconductor layer,

wherein the first insulating film contains silicon oxide.

6 . The semiconductor device according to claim 5 , further comprising,

a second insulating film in contact with the first insulating film,

wherein a film density of the second insulating film is smaller than a film density of the first insulating film.

7 . The semiconductor device according to claim 5 , further comprising,

a semiconductor layer containing silicon;

a second gate electrode overlapping the semiconductor layer, and

a second insulating film in contact with the first insulating film,

wherein:

the first gate electrode and the second gate electrode are located on the same layer,

the oxide semiconductor layer is arranged on an upper layer than the semiconductor layer, and

a film density of the second insulating film is greater than a film density of the first insulating film.

8 . The semiconductor device according to claim 7 ,

wherein the second insulating film contains silicon nitride.

9 . A semiconductor device comprising:

a first gate electrode;

a first gate insulating layer covering the first gate electrode;

an oxide semiconductor layer on the first gate insulating layer;

a second gate insulating layer covering the oxide semiconductor layer;

a second gate electrode on the second gate insulating layer; and

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer,

wherein

each of the first gate electrode and the second gate electrode includes a hydrogen-absorbing alloy including at least one selected from palladium (Pd) and Vanadium (V).

10 . The semiconductor device according to claim 9 ,

wherein:

at least one of the source electrode and the drain electrode has a layered structure of two or more layers,

the layered structure has a first layer closest to the oxide semiconductor layer and a second layer farthest from the oxide semiconductor layer, and

a thickness of the first layer is greater than a thickness of the second layer.

11 . The semiconductor device according to claim 9 ,

wherein:

the layered structure has a third layer between the first layer and the second layer,

the first layer and the second layer contain titanium, and

the third layer contains aluminum.

12 . The semiconductor device according to claim 9 , further comprising,

electrode pads between the source electrode and the drain electrode and the oxide semiconductor layer, respectively,

wherein:

the source electrode and the drain electrode include titanium and aluminum, and

a thickness of the source electrode and the drain electrode is greater than a thickness of the electrode pads.

13 . The semiconductor device according to claim 9 , further comprising,

a semiconductor layer containing silicon, and

a wiring electrically connected to the semiconductor layer,

wherein:

the oxide semiconductor layer is arranged on an upper layer than the semiconductor layer,

a part of the wiring is the first gate electrode, and

the wiring consists of copper containing manganese (Mn).

14 . The semiconductor device according to claim 9 , further comprising,

a first insulating film in contact with the second gate electrode and the second gate insulating film,

wherein first insulating film contains silicon oxide.

15 . The semiconductor device according to claim 14 , further comprising,

a second insulating film in contact with the first insulating film,

wherein a film density of the second insulating film is smaller than a film density of the first insulating film.

16 . The semiconductor device according to claim 15 , further comprising,

a third insulating film in contact with the first gate electrode, and

a fourth insulating film in contact with the third insulating film,

wherein a film density of the fourth insulating film is smaller than a film density of the third insulating film.

17 . The semiconductor device according to claim 16 , further comprising,

a semiconductor layer containing silicon,

wherein the third insulating film is arranged between the semiconductor layer and the first gate insulating film.