IP Library › Granted Patent US 12,203,854
Granted Patent B2
US 12,203,854 · App. 18/333,952 · Granted Jan 21, 2025

Integrated device for temporal binning of received photons

Inventors: Jonathan M. Rothberg (Miami Beach, FL); Keith G. Fife (Longwood, FL); David M. Boisvert (San Jose, CA)
Assignee: Quantum-Si Incorporated
G01N21/6428C12Q1/6869G01N21/6408G01N21/645G01N21/6458G01S7/4865H01L27/14603H01L27/14687H01L27/14812G01N2021/6439G01N2021/6441G01N2201/06113G01N2201/0697G01S7/4863
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Quick Facts
Patent No.
US 12,203,854
App. No.
18/333,952
Granted
Jan 21, 2025
Kind
B2
Abstract

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Claims (83)

1. A system, comprising:

an integrated circuit, comprising:

a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons;

at least one charge carrier storage region comprising a first charge carrier storage region and a second charge carrier storage region; and

a charge carrier segregation structure comprising:

a charge carrier travel region comprising a semiconductor material; and

a plurality of electrodes; and

a control circuit configured to:

capture a charge carrier of the plurality of charge carriers, produced in the photodetection region, by:

producing a first potential barrier at a first location within the integrated circuit by changing a voltage of a first electrode of the plurality of electrodes at a first time; and

producing a second potential barrier at a second location within the integrated circuit by changing a voltage of a second electrode of the plurality of electrodes at a second time after the first time, such that the charge carrier is captured between the first potential barrier and the second potential barrier at a time that results from a time at which the charge carrier arrived at the charge carrier travel region, which in turn depends upon a time at which the charge carrier was produced in response to a photon of the incident photons in the photodetection region,

wherein capturing the charge carrier between the first potential barrier and the second potential barrier selectively directs the charge carrier into the at least one charge carrier storage region; and

capture a second charge carrier, produced in the photodetection region in response to an incident photon, by:

producing a third potential barrier at a third location within the integrated circuit by changing a voltage of a third electrode of the plurality of electrodes at a third time after the second time, such that the second charge carrier is captured between the second potential barrier and the third potential barrier at a time that results from a time at which the second charge carrier arrived at the charge carrier travel region, which in turn depends upon a time at which the second charge carrier was produced in response to the incident photon in the photodetection region,

wherein:

capturing the charge carrier between the first potential barrier and the second potential barrier selectively directs the charge carrier into the first charge carrier storage region; and

capturing the second charge carrier between the second potential barrier and the third potential barrier selectively directs the second charge carrier into the second charge carrier storage region.

2. The system of claim 1 , wherein the first charge carrier storage region is coupled between the first and second electrodes and the second charge carrier storage region is coupled between the second and third electrodes.

3. The system of claim 1 , wherein the integrated circuit further comprises a floating diffusion region configured to read out charge carriers from the first and second charge carrier storage regions.

4. The system of claim 1 , wherein the at least one charge carrier storage region is coupled to a region between the first and second electrodes.

5. The system of claim 1 , wherein the integrated circuit is configured to detect the incident photons to sequence a nucleic acid.

6. The system of claim 1 , wherein the integrated circuit is configured to receive the incident photons from fluorophores.

7. The system of claim 1 , wherein the integrated circuit further comprises:

a drain region; and

a drain electrode,

wherein the control circuit is configured to change a voltage of the drain electrode to lower a potential barrier located at a third location within the integrated circuit disposed, at least in part, between the photodetection region and the drain region, thereby transferring at least some of the plurality of charge carriers from the photodetection region to the drain region.

8. A system, comprising:

an integrated circuit, comprising:

a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons;

at least one charge carrier storage region; and

a charge carrier segregation structure comprising:

a charge carrier travel region comprising a semiconductor material; and

a plurality of electrodes; and

a control circuit configured to:

capture a charge carrier of the plurality of charge carriers, produced in the photodetection region, by:

producing a first potential barrier at a first location within the integrated circuit by changing a voltage of a first electrode of the plurality of electrodes at a first time; and

producing a second potential barrier at a second location within the integrated circuit by changing a voltage of a second electrode of the plurality of electrodes at a second time after the first time, such that the charge carrier is captured between the first potential barrier and the second potential barrier at a time that results from a time at which the charge carrier arrived at the charge carrier travel region, which in turn depends upon a time at which the charge carrier was produced in response to a photon of the incident photons in the photodetection region,

wherein capturing the charge carrier between the first potential barrier and the second potential barrier selectively directs the charge carrier into the at least one charge carrier storage region; and

aggregate charge carriers in the at least one charge carrier storage region by:

in response to a first excitation of a sample that results in the incident photons being received at the photodetection region, capturing the charge carrier between the first potential barrier and the second potential barrier to selectively direct the charge carrier into the at least one charge carrier storage region; and

in response to a second excitation of the sample that results in second incident photons being received at the photodetection region, capturing a second charge carrier, produced in the photodetection region in response to the second incident photons, in the at least one charge carrier storage region by:

producing the second potential barrier at the second location within the integrated circuit by changing the voltage of the second electrode, such that the second charge carrier is captured between the first potential barrier and the second potential barrier,

wherein capturing the second charge carrier between the first potential barrier and the second potential barrier aggregates the second charge carrier in the at least one charge carrier storage region with the charge carrier.

9. A system, comprising:

an integrated circuit, comprising:

a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons;

at least one charge carrier storage region; and

a charge carrier segregation structure comprising:

a charge carrier travel region comprising a semiconductor material; and

a plurality of electrodes;

a control circuit configured to capture a charge carrier of the plurality of charge carriers, produced in the photodetection region, by:

producing a first potential barrier at a first location within the integrated circuit by changing a voltage of a first electrode of the plurality of electrodes at a first time; and

producing a second potential barrier at a second location within the integrated circuit by changing a voltage of a second electrode of the plurality of electrodes at a second time after the first time, such that the charge carrier is captured between the first potential barrier and the second potential barrier at a time that results from a time at which the charge carrier arrived at the charge carrier travel region, which in turn depends upon a time at which the charge carrier was produced in response to a photon of the incident photons in the photodetection region,

wherein capturing the charge carrier between the first potential barrier and the second potential barrier selectively directs the charge carrier into the at least one charge carrier storage region; and

a computing device configured to analyze one or more signals from the at least one charge carrier storage region to produce information regarding arrival of photons over time.

10. The system of claim 9 , wherein the integrated circuit is configured to transmit information regarding one or more signals from the at least one charge carrier storage region to the computing device for analysis.

11. The system of claim 10 , wherein the computing device is configured to analyze the one or more signals to calculate a luminance lifetime or discriminate a first luminance lifetime from a second luminance lifetime.

12. The system of claim 10 , wherein the computing device is configured to analyze the one or more signals to calculate a fluorescence lifetime or discriminate a first fluorescence lifetime from a second fluorescence lifetime.

13. An integrated circuit, comprising:

a photodetection region configured to receive incident photons, the photodetection region being configured to produce a plurality of charge carriers in response to the incident photons;

at least one charge carrier storage region;

a charge carrier segregation structure comprising:

a charge carrier travel region comprising a semiconductor material; and

a plurality of electrodes,

wherein the charge carrier segregation structure is controllable to capture, in the at least one charge carrier storage region, a charge carrier of the plurality of charge carriers produced in the photodetection region by:

in response to a voltage of a first electrode of the plurality of electrodes changing, producing a first potential barrier at a first location within the integrated circuit;

in response to a voltage of a second electrode of the plurality of electrodes changing, producing a second potential barrier at a second location within the integrated circuit, such that the charge carrier is captured between the first potential barrier and the second potential barrier as a result of the charge carrier being disposed between the first and second potential barriers when the voltage of the second electrode changed; and

as a result of the charge carrier being captured between the first potential barrier and the second potential barrier, storing the charge carrier in the at least one charge carrier storage region;

a drain region; and

a drain electrode,

wherein the integrated circuit is configured to, in response to a voltage of the drain electrode changing, lower a potential barrier located at a third location within the integrated circuit disposed, at least in part, between the photodetection region and the drain region, thereby transferring at least some of the plurality of charge carriers from the photodetection region to the drain region.

14. The integrated circuit of claim 13 , wherein:

the at least one charge carrier storage region comprises a first charge carrier storage region and a second charge carrier storage region,

the charge carrier segregation structure is controllable to capture a second charge carrier, produced in the photodetection region in response to an incident photon, by:

in response to a voltage of a third electrode of the plurality of electrodes changing, producing a third potential barrier at a third location within the integrated circuit, such that the second charge carrier is captured between the second potential barrier and the third potential barrier as a result of the second charge carrier being disposed between the second potential barrier and the third potential barrier when the voltage of the third electrode changed; and

as a result of the second charge carrier being captured between the second potential barrier and the third potential barrier, storing the second charge carrier in the second charge carrier storage region, and

as a result of the charge carrier being captured between the first potential barrier and the second potential barrier, the charge carrier is stored in the first charge carrier storage region.

15. The integrated circuit of claim 14 , wherein the first charge carrier storage region is coupled between the first and second electrodes and the second charge carrier storage region is coupled between the second and third electrodes.

16. The integrated circuit of claim 14 , further comprising a floating diffusion region configured to read out charge carriers from the first and second charge carrier storage regions.

17. The integrated circuit of claim 13 , wherein the at least one charge carrier storage region is coupled to a region between the first and second electrodes.

18. The integrated circuit of claim 13 , wherein the charge carrier segregation structure is further controllable to, after storing the charge carrier in the at least one charge carrier storage region, aggregate, in the at least one charge carrier storage region with the charge carrier, a second charge carrier, produced in the photodetection region in response to second incident photons, by:

in response to the voltage of the second electrode changing, producing the second potential barrier at the second location within the integrated circuit, such that the second charge carrier is captured between the first potential barrier and the second potential barrier as a result of the second charge carrier being disposed between the first and second potential barriers when the second potential barrier changed time, such that the second charge carrier is captured between the first potential barrier and the second potential barrier,

wherein capturing the second charge carrier between the first potential barrier and the second potential barrier aggregates the second charge carrier in the at least one charge carrier storage region with the charge carrier.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 16, 2024
From: ROTHBERG, JONATHAN M.; FIFE, KEITH G.; BOISVERT, DAVID
To: QUANTUM-SI INCORPORATED
Reel/Frame 068914/0016 →
Continuity (8)
Continuation 17533170 · Nov 23, 2021
Continuation 16984537 · Aug 4, 2020
Continuation 15914019 · Mar 7, 2018
Continuation 15656139 · Jul 21, 2017
Continuation 14821656 · Aug 7, 2015
Provisional Application 62164506 · May 20, 2015
Provisional Application 62035377 · Aug 8, 2014
Related Publication 20230408411A1 · Dec 21, 2023
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