IP Library Granted Patent US 12,533,704
Granted Patent B2
US 12,533,704 · App. 18/337,246 · Granted Jan 27, 2026

Substrate carrier improvement

Inventors: Russell Chin Yee Teo (Palo Alto, CA); Yingdong Luo (Newark, CA); Ludovic Godet (Sunnyvale, CA); Daihua Zhang (Los Altos, CA); Zhengping Yao (Cupertino, CA); James D. Strassner (Austin, TX)
Assignee: Applied Materials, Inc.
B05C5/0291B05D3/007B05D3/067B05D7/24B05D2203/30
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Quick Facts
Patent No.
US 12,533,704
App. No.
18/337,246
Granted
Jan 27, 2026
Kind
B2
Abstract

A method of forming a substrate carrier is provided. The method includes forming a first electrode over a first surface of a substrate, the first electrode arranged in a first pattern including a plurality of segments, wherein portions of the plurality of segments are spaced apart from each other by a plurality of gaps; and dispensing a plurality of droplets of a dielectric material over the substrate and into the plurality of gaps. The plurality of droplets includes a first droplet and a second droplet, the first droplet is dispensed onto a first location over the substrate, the second droplet is dispensed onto a second location over the substrate, a size of the first droplet is at least 10% larger than a size of the second droplet.

Claims (43)

1 . A method of forming a substrate carrier comprising:

forming a first electrode over a first surface of a substrate, the first electrode arranged in a first pattern including a plurality of segments, wherein portions of the plurality of segments are spaced apart from each other by a plurality of gaps; and

dispensing a plurality of droplets of a dielectric material over the substrate and into the plurality of gaps, wherein

the plurality of droplets includes a first droplet and a second droplet,

the first droplet is dispensed onto a first location over the substrate,

the second droplet is dispensed onto a second location over the substrate, and

a size of the first droplet is at least 10% larger than a size of the second droplet.

2 . The method of claim 1 , wherein the first location over the substrate is spaced apart from the second location over the substrate in a direction that is parallel to the first surface of the substrate.

3 . The method of claim 1 , wherein the first location over the substrate directly overlies or directly underlies the second location over the substrate.

4 . The method of claim 1 , wherein each droplet of the dielectric material includes a plurality of dielectric nanoparticles.

5 . The method of claim 4 , wherein the plurality of dielectric nanoparticles includes one or more nanoparticles formed of silicon oxide, titanium oxide, zinc oxide, zirconium oxide, niobium oxide, hafnium oxide, vanadium oxide, lead oxide, tantalum oxide, and rubber.

6 . The method of claim 1 , wherein the size of the first droplet is at least 50% larger than the size of the second droplet.

7 . The method of claim 1 , further comprising curing the dielectric material.

8 . A method of forming a substrate carrier comprising:

forming a first electrode over a first surface of a substrate, the first electrode arranged in a first pattern including a plurality of segments, wherein portions of the plurality of segments are spaced apart from each other by a plurality of gaps; and

dispensing a plurality of droplets of a dielectric material over the substrate and into the plurality of gaps, wherein

the plurality of droplets includes a first droplet and a second droplet,

the first droplet is dispensed onto a first location over the substrate,

the second droplet is dispensed onto a second location over the substrate,

the first droplet includes a first plurality of dielectric particles,

the second droplet includes a second plurality of dielectric particles, and

an average size of the first plurality of dielectric particles in the first droplet is at least 10% larger than an average size of the second plurality of dielectric particles in the second droplet.

9 . The method of claim 8 , wherein the first location over the substrate is spaced apart from the second location over the substrate in a direction that is parallel to the first surface of the substrate.

10 . The method of claim 8 , wherein the first location over the substrate directly overlies or directly underlies the second location over the substrate.

11 . The method of claim 8 , wherein the first and second plurality of dielectric particles each include one or more dielectric nanoparticles formed of silicon oxide, titanium oxide, zinc oxide, zirconium oxide, niobium oxide, hafnium oxide, vanadium oxide, lead oxide, tantalum oxide, and rubber.

12 . The method of claim 8 , wherein the average size of the first plurality of dielectric particles in the first droplet is at least 50% larger than the average size of the second plurality of dielectric particles in the second droplet.

13 . The method of claim 8 , further comprising curing the dielectric material.

14 . A method of forming a substrate carrier comprising:

forming a first electrode over a first surface of a substrate, the first electrode arranged in a first pattern including a plurality of segments, wherein portions of the plurality of segments are spaced apart from each other by a plurality of gaps; and

dispensing a plurality of droplets over the substrate and into the plurality of gaps to form a dielectric layer, wherein

the plurality of droplets includes a first droplet and a second droplet,

the first droplet is dispensed onto a first location over the substrate,

the second droplet is dispensed onto a second location over the substrate,

the first droplet is formed of a first dielectric mixture, and

the second droplet is formed of a second dielectric mixture.

15 . The method of claim 14 , wherein

the first dielectric mixture includes a first plurality of dielectric nanoparticles formed of a first dielectric material, and

the second dielectric mixture includes a second plurality of dielectric nanoparticles formed of a second dielectric material.

16 . The method of claim 15 , wherein a size of the first droplet is at least 50% larger than a size of the second droplet.

17 . The method of claim 15 , an average size of the first plurality of dielectric nanoparticles in the first droplet is at least 50% larger than an average size of the second plurality of nanodielectric particles in the second droplet.

18 . The method of claim 14 , wherein the first location over the substrate is spaced apart from the second location over the substrate in a direction that is parallel to the first surface of the substrate.

19 . The method of claim 14 , wherein the first location over the substrate directly overlies or directly underlies the second location over the substrate.

20 . The method of claim 14 , further comprising curing the first droplet and the second droplet simultaneously.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2024
From: TEO, RUSSELL CHIN YEE; LUO, YINGDONG; GODET, LUDOVIC; ZHANG, DAIHUA; YAO, ZHENGPING; STRASSNER, JAMES D.
To: APPLIED MATERIALS, INC.
Reel/Frame 066900/0036 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 19, 2023
From: ZHOU, CHUNMING; RAMALINGAM, JOTHILINGAM; CAO, YONG; MORAES, KEVIN VINCENT; LAVAN, SHANE
To: APPLIED MATERIALS, INC.
Reel/Frame 063987/0055 →
Continuity (2)
Provisional Application 63357983 · Jul 1, 2022
Related Publication 20240001398A1 · Jan 4, 2024
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