3D GLASS MODULES

1 . A multilayer hermetic glass module ( 100 ) for wireless communication, the module ( 100 ) comprising a plurality of glass layers each separated by a substrate of a plurality of substrates and connected by a redistribution layer (RDL) of a plurality of RDLs, wherein one or more electronic components are disposed within the plurality of glass layers.

2 . The module ( 100 ) of claim 1 , wherein the one or more electronic components are selected from a group consisting of capacitors ( 114 , 125 , 135 ), inductors ( 115 , 126 ), resonators ( 122 , 123 ), microchips ( 134 ), antennas ( 143 ), diplexers ( 127 ), and waveguides ( 128 ).

3 . The module ( 100 ) of claim 2 , wherein the resonators ( 122 , 123 ) comprise a bulk acoustic wave (BAW) resonator ( 122 ), a surface acoustic wave (SAW) resonator ( 123 ), or a combination thereof.

4 . The module ( 100 ) of claim 1 , wherein the antennas ( 143 ) comprise a Wifi antenna, a long-range (LoRa) antenna, a wide-area network (WAN) antenna, a low-power wide-area network (LPWAN) antenna, or a combination thereof.

5 . The module ( 100 ) of claim 1 , wherein the capacitors comprise fixed capacitors, variable capacitors, or a combination thereof.

6 . The module ( 100 ) of claim 1 , wherein the inductors comprise air-core inductors, ferromagnetic-core inductors, variable inductors, chokes, or a combination thereof.

7 . The module ( 100 ) of claim 1 , wherein the microchips ( 134 ) comprise logic chips, memory chips, application-specific integrated chips (ASICs), or a combination thereof.

8 . The module ( 100 ) of claim 1 , wherein each substrate of the plurality of substrates comprises copper, alumina, Polytetrafluoroethylene (PTFE), Kapton, or a combination thereof.

9 . The module ( 100 ) of claim 1 further comprising one or more solder balls ( 200 ) disposed on a bottom surface of the first substrate ( 110 ).

10 . A hermetic glass module ( 100 ) for wireless communication, the module ( 100 ) comprising a plurality of glass layers comprising:

a. a first layer ( 110 ) comprising:

i. a first set of one or more capacitors ( 114 );

ii. a first set of one or more inductors ( 115 ); and

iii. a set of one or more resonators ( 122 , 123 );

b. a second layer ( 120 ) comprising:

i. a second set of one or more capacitors ( 125 );

ii. a second set of one or more inductors ( 126 );

iii. a set of one or more diplexers ( 127 ); and

iv. a set of one or more waveguides ( 128 );

c. a third layer ( 130 ) comprising:

i. a set of one or more microchips ( 134 ); and

ii. a third set of one or more capacitors ( 135 ); and

d. a fourth layer ( 140 ) comprising:

i. a glass cover layer ( 142 ); and

ii. one or more antennas ( 143 ) disposed within the glass cover layer ( 142 );

wherein the plurality of glass layers are each separated by a substrate of a plurality of substrates and are connected by a redistribution layer (RDL) of a plurality of RDLs.

11 . The module ( 100 ) of claim 10 , wherein the set of one or more resonators ( 122 , 123 ) comprises a bulk acoustic wave (BAW) resonator ( 122 ), a surface acoustic wave (SAW) resonator ( 123 ), or a combination thereof.

12 . The module ( 100 ) of claim 10 , wherein the one or more antennas ( 143 ) comprise a Wifi antenna, a long-range (LoRa) antenna, a wide-area network (WAN) antenna, a low-power wide-area network (LPWAN) antenna, or a combination thereof.

13 . The module ( 100 ) of claim 10 , wherein the first set of one or more capacitors ( 114 ), the second set of one or more capacitors ( 125 ), and the third set of one or more capacitors ( 135 ) comprising fixed capacitors, variable capacitors, or a combination thereof.

14 . The module ( 100 ) of claim 10 , wherein the first set of one or more inductors ( 115 ) and the second set of one or more inductors ( 126 ) comprise air-core inductors, ferromagnetic-core inductors, variable inductors, chokes, or a combination thereof.

15 . The module ( 100 ) of claim 10 , wherein the set of one or more microchips ( 134 ) comprise logic chips, memory chips, application-specific integrated chips (ASICs), or a combination thereof.

16 . The module ( 100 ) of claim 10 , wherein each substrate of the plurality of substrates comprises copper, alumina, Polytetrafluoroethylene (PTFE), Kapton, or a combination thereof.

17 . The module ( 100 ) of claim 10 further comprising one or more solder balls ( 200 ) disposed on a bottom surface of the first substrate ( 110 ).

18 . A hermetic glass module ( 100 ) for wireless communication, the module ( 100 ) comprising:

a. a first layer ( 110 ) comprising:

i. a first substrate ( 111 );

ii. a first glass wall ( 112 ) disposed around a perimeter of the substrate, the first glass wall ( 112 ) encompassing a first gap ( 113 );

iii. a first set of one or more capacitors ( 114 ) disposed within the first glass wall ( 112 ); and

iv. a first set of one or more inductors ( 115 ) disposed within the glass wall;

b. a second layer ( 120 ) coupled to the first layer ( 110 ) by a redistribution layer (RDL), comprising:

i. a second substrate ( 121 ) disposed on top of the glass wall of the first layer ( 110 );

ii. a bulk acoustic wave (BAW) resonator ( 122 ) disposed on a bottom surface of the second substrate ( 121 ) such that the BAW resonator ( 122 ) is disposed in the first gap ( 113 );

iii. a surface acoustic wave (SAW) resonator ( 123 ) disposed on a bottom surface of the second substrate ( 121 ) such that the SAW resonator ( 123 ) is disposed in the first gap ( 113 );

iv. a glass layer ( 124 ) disposed on top of the second substrate ( 121 ), wherein the glass layer ( 124 ) is divided horizontally into a first sublayer and a second sublayer;

v. a second set of one or more capacitors ( 125 ) disposed within the glass layer ( 124 );

vi. a second set of one or more inductors ( 126 ) disposed within the glass layer ( 124 );

vii. one or more diplexers ( 127 ) disposed within the glass layer ( 124 ); and

viii. one or more waveguides ( 128 ) disposed within the glass layer ( 124 );

c. a third layer ( 130 ) coupled to the second layer ( 120 ) by a RDL, comprising:

i. a third substrate ( 131 ) disposed on top of the glass layer ( 124 );

ii. a second glass wall ( 132 ) disposed around a perimeter of the third substrate ( 131 ), the second glass wall ( 132 ) enclosing a second gap ( 133 );

iii. one or more microchips ( 134 ) disposed on a top surface of the third substrate ( 131 ) such that the one or more microchips ( 134 ) are disposed within the second gap ( 133 ); and

iv. a third set of one or more capacitors ( 135 ) disposed within the second glass wall ( 132 ); and

d. a fourth layer ( 140 ) coupled to the third layer ( 130 ) by a RDL, comprising:

i. a fourth substrate ( 141 ) disposed on top of the second glass wall ( 132 );

ii. a glass cover layer ( 142 ) disposed on top of the fourth substrate ( 141 ); and

iii. one or more antennas ( 143 ) disposed within the glass cover layer ( 142 ).

19 . The module ( 100 ) of claim 18 further comprising one or more solder balls ( 200 ) disposed on a bottom surface of the first substrate ( 110 ).