UNDER-BUMP METALLIZATION STRUCTURES AND ASSOCIATED METHODS OF FORMATION
Methods, systems, and devices for semiconductor manufacturing are described. One such method includes forming a first layer comprising a first material. A top surface of the first layer extends along a first direction and a second direction. In some cases, the method includes forming, on at least the top surface of the first layer, a second layer comprising a second material, and forming a void in the second layer. Forming the void may expose a portion of the top surface of the first layer. In some cases, the method may include forming one or more layers on a top surface of the second layer and on the exposed portion of the top surface of the first layer. The method may also include performing a material removal operation that lifts portions of the one or more layers formed on the top surface of the second layer off of the top surface.
1 . A method comprising:
forming a first layer comprising a first material, wherein a top surface of the first layer extends along a first direction and a second direction, the first direction parallel to a width of the first layer and the second direction parallel to a depth of the first layer;
forming, on at least the top surface of the first layer, a second layer comprising a second material;
forming a void in the second layer, wherein forming the void exposes a portion of the top surface of the first layer;
forming one or more layers on a top surface of the second layer and on the exposed portion of the top surface of the first layer; and
performing a material removal operation, wherein the material removal operation lifts portions of the one or more layers formed on the top surface of the second layer off of the top surface.
2 . The method of claim 1 , wherein forming the one or more layers comprises:
forming, on the top surface of the second layer and on the exposed portion of the top surface of the first layer, a third layer comprising a third material;
forming, on a top surface of the third layer, a fourth layer comprising a fourth material; and
forming, on a top surface of the fourth layer, a fifth layer comprising a fifth material.
3 . The method of claim 2 , wherein the first material comprises aluminum, the second material comprises silicon nitride, the third material comprises titanium, the fourth material comprises nickel, and the fifth material comprises silver.
4 . The method of claim 2 , wherein a height dimension of the fourth layer is greater than or equal to 300 nanometers.
5 . The method of claim 1 , wherein performing the material removal operation comprises:
removing the portions of the one or more layers using an adhesive film.
6 . The method of claim 1 , further comprising:
forming a sixth material on a top layer of the one or more layers, wherein forming the sixth material avoids forming the sixth material in contact with the second layer.
7 . The method of claim 6 , wherein the sixth material comprises a solder material.
8 . The method of claim 1 , further comprising:
forming a sixth layer comprising the second material, wherein the first layer is formed on the sixth layer.
9 . The method of claim 1 , further comprising:
performing a reflow operation, wherein performing the reflow operation couples the first layer with a device via at least the one or more layers.
10 . The method of claim 1 , further comprising:
forming, on a top layer of the one or more layers, a pillar comprising a seventh material, wherein a height axis of the pillar extends along a third direction parallel to a height of the first layer; and
forming, on a top surface of the pillar, a seventh layer comprising a fourth material.
11 . The method of claim 1 , wherein the one or more layers comprise an under-bump metallization.
12 . An apparatus comprising:
a first layer comprising a first material, wherein the first layer has a width parallel to a first direction, a depth parallel to a second direction, and a height parallel to a third direction;
a second layer comprising a second material formed on at least a top surface of the first layer, the top surface of the first layer extending along the first direction and the second direction;
a void formed in the second layer, wherein extents of the void comprise sidewalls of the second layer and a portion of the top surface of the first layer, wherein the sidewalls of the second layer are parallel to the third direction; and
one or more layers formed on the sidewalls of the second layer and on the portion of the top surface of the first layer, the one or more layers for coupling the first layer with a bonding material.
13 . The apparatus of claim 12 , wherein the one or more layers comprise:
a third layer comprising a third material, the third layer formed on a top surface of the second layer;
a fourth layer comprising a fourth material, the fourth layer formed on a top surface of the third layer; and
a fifth layer comprising a fifth material, the fifth layer formed on a top surface of the fourth layer.
14 . The apparatus of claim 13 , wherein the first material comprises aluminum, the second material comprises silicon nitride, the third material comprises titanium, the fourth material comprises nickel, and the fifth material comprises silver.
15 . The apparatus of claim 13 , wherein a height dimension of the fourth layer is greater than or equal to 300 nanometers.
16 . The apparatus of claim 12 , wherein the bonding material comprises solder.
17 . The apparatus of claim 12 , further comprising:
a sixth layer comprising the second material, wherein the first layer is formed on the sixth layer.
18 . The apparatus of claim 12 , further comprising:
a pillar comprising a seventh material, wherein a height axis of the pillar extends along the third direction; and
a seventh layer comprising a fourth material, the seventh layer formed on a top surface of the pillar.
19 . The apparatus of claim 12 , wherein the one or more layers comprise an under-bump metallization.
20 . A product formed by a method comprising:
forming a first layer comprising a first material, wherein a top surface of the first layer extends along a first direction and a second direction, the first direction parallel to a width of the first layer and the second direction parallel to a depth of the first layer;
forming, on at least the top surface of the first layer, a second layer comprising a second material;
forming a void in the second layer, wherein forming the void exposes a portion of the top surface of the first layer,
forming one or more layers on a top surface of the second layer and on the exposed portion of the top surface of the first layer; and
performing a material removal operation, wherein the material removal operation lifts portions of the one or more layers formed on the top surface of the second layer off of the top surface.