IP Library Granted Patent US 12,628,666
Granted Patent B2
US 12,628,666 · App. 18/351,542 · Granted May 12, 2026

Semiconductor device with metal connector having notch

Inventor: Kakeru Yamaguchi (Yokohama, JP)
Assignees: KABUSHIKI KAISHA TOSHIBA; TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
H01L24/37H01L23/49562H01L24/40H01L2224/37005H01L2224/40175
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,628,666
App. No.
18/351,542
Granted
May 12, 2026
Kind
B2
Abstract

A semiconductor device according to an embodiment includes a metal frame separated from a semiconductor chip, and a metal connector connected to the semiconductor chip via a first bonding material on an electrode of the semiconductor chip, and connected to the metal frame via a second bonding material on a disposition surface of the metal frame. The metal connector includes: a first part connected to the first bonding material and serving as a first end; a second part connected to the first part and rising toward the metal frame; a third part connected to the second part and serving as a second end; and a notch that opens on a second-end-side surface formed on the third part, adjacent to a connecting surface connected to the second bonding material, and opposed to a tilted surface of the metal frame adjacent to and tilted with respect to the disposition surface.

Claims (38)

1 . A semiconductor device comprising:

a semiconductor chip having an electrode;

a first bonding material provided on the electrode of the semiconductor chip;

a metal frame disposed to be separated from the semiconductor chip;

a second bonding material provided on the metal frame; and

a metal connector connected to the semiconductor chip via the first bonding material and connected to the metal frame via the second bonding material, wherein

the metal frame comprises:

a disposition surface on which the second bonding material is disposed; and

a tilted surface adjacent to the disposition surface and tilted by a predetermined angle with respect to the disposition surface,

the metal connector comprises:

a first part connected to the first bonding material and serving as a first end;

a second part integrally connected to the first part and formed so as to rise toward the metal frame;

a third part integrally connected to the second part and serving as a second end;

a connecting surface formed in the third part and connected to the second bonding material;

a second-end-side surface formed on the third part, adjacent to the connecting surface, and opposed to the tilted surface of the metal frame; and

a notch that opens on the second-end-side surface and penetrates through the third part in a thickness direction,

a direction orthogonal to a direction in which the tilted surface of the metal frame and the second-end-side surface of the metal connector are opposed to each other and to the thickness direction is a width direction of the metal connector, and

the metal connector is set such that a length of the third part in the width direction is longer than a length of the first part in the width direction, and a weight of the third part is larger than a weight of the first part.

2 . The semiconductor device according to claim 1 , wherein, in the direction in which the tilted surface of the metal frame and the second-end-side surface of the metal connector are opposed to each other, a length of the notch of the metal connector is longer than a distance between the tilted surface of the metal frame and the second-end-side surface of the metal connector.

3 . The semiconductor device according to claim 1 , wherein the electrode is a gate electrode, and the metal connector is a gate connector.

4 . The semiconductor device according to claim 1 , wherein the notch is rectangular, semicircular, or V-shaped in the metal connector in a planar view.

5 . A semiconductor device comprising:

a semiconductor chip having an electrode;

a first bonding material provided on the electrode of the semiconductor chip;

a metal frame disposed to be separated from the semiconductor chip;

a second bonding material provided on the metal frame; and

a metal connector connected to the semiconductor chip via the first bonding material and connected to the metal frame via the second bonding material, wherein

the metal frame comprises:

a disposition surface on which the second bonding material is disposed; and

a tilted surface adjacent to the disposition surface and tilted by a predetermined angle with respect to the disposition surface,

the metal connector comprises:

a first part connected to the first bonding material and serving as a first end;

a second part integrally connected to the first part and formed so as to rise toward the metal frame;

a third part integrally connected to the second part and serving as a second end;

a connecting surface formed in the third part and connected to the second bonding material;

a second-end-side surface formed on the third part, adjacent to the connecting surface, and opposed to the tilted surface of the metal frame; and

a notch that opens on the second-end-side surface and penetrates through the third part in a thickness direction, and

in a direction in which the tilted surface of the metal frame and the second-end-side surface of the metal connector are opposed to each other, a length of the notch of the metal connector is longer than a distance between the tilted surface of the metal frame and the second-end-side surface of the metal connector.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 13, 2023
From: YAMAGUCHI, KAKERU
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Reel/Frame 064237/0756 →
Priority Claims (1)
JP JP2022-121828 · Jul 29, 2022 · national
Continuity (1)
Related Publication 20240038715A1 · Feb 1, 2024
References Cited (13)
US 7719100B2 · Yamashita et al. · 2010 [cited by applicant]
US 8299600B2 · Sato et al. · 2012 [cited by applicant]
US 20200211937A1 · Saito · 2020 [cited by examiner]
US 20210159162A1 · Ise et al. · 2021 [cited by applicant]
JP 200795984A · 2007 [cited by applicant]
JP 2010123686A · 2010 [cited by applicant]
JP 2012104708 · 2012 [cited by applicant]
JP 2013197365 · 2013 [cited by applicant]
JP 201580383A · 2015 [cited by applicant]
JP 2019087741 · 2019 [cited by applicant]
JP 2020088319 · 2020 [cited by applicant]
JP 2023008226 · 2023 [cited by applicant]
Decision to Grant a Patent, issued Feb. 3, 2026 in Japanese Patent Application No. 2022-121828, with English translation. [cited by applicant]