SEMICONDUCTOR DEVICES INCORPORATING QUANTUM DOTS
In accordance with one or more aspects of the present disclosure, an apparatus including micro-LEDs is provided. The apparatus may include a first nanoporous structure fabricated on a first light-emitting device and a second nanoporous structure fabricated on a second light-emitting device. A first plurality quantum dots are placed in the first nanoporous structure for converting light emitted by the first light-emitting device into light of a first color. A second plurality quantum dots are placed in the second nanoporous structure for converting light emitted by the second light-emitting device into light a second color. The apparatus further includes a third light-emitting device that emits light of a third color. The apparatus further includes a conductive layer of a conductive material. The conductive layer contacts the top surfaces of the first light-emitting device, the second surface of the second light-emitting device, and the third light-emitting device.
1 . An apparatus, comprising:
a first nanoporous structure fabricated on a first surface of a first light-emitting device, wherein a first plurality quantum dots are placed in the first nanoporous structure for converting light emitted by the first light-emitting device into light of a first color;
a second nanoporous structure fabricated on a second surface of a second light-emitting device, wherein a second plurality quantum dots are placed in the second nanoporous structure for converting light emitted by the second light-emitting device into light a second color;
a third light-emitting device that emits light of a third color; and
a conductive layer comprising a conductive material, wherein at least a portion of the conductive layer is fabricated in a first trench between the first light-emitting device and the second light-emitting device, and wherein the conductive layer contacts the first surface of the first light-emitting device, the second surface of the second light-emitting device, and a third surface of the third light-emitting device.
2 . The apparatus of claim 1 , wherein a first lateral dimension of the first light-emitting device is greater than a second lateral dimension of the first nanoporous structure.
3 . The apparatus of claim 1 , further comprising:
a substrate comprising a CMOS circuit; and
a dielectric layer, wherein at least a first portion of the dielectric layer is positioned between the substrate and the conductive layer.
4 . The apparatus of claim 1 , further comprising a color filter on the first nanoporous structure and the second nanoporous structure.
5 . The apparatus of claim 4 , further comprising a plurality of micro-lenses fabricated on the color filter.
6 . The apparatus of claim 1 , wherein the conductive material comprises a metallic material.
7 . The apparatus of claim 1 , further comprising a third nanoporous structure on the third light-emitting device, wherein no quantum dots are placed in the third nanoporous structure.
8 . The apparatus of claim 1 , wherein at least a portion of the conductive layer is fabricated in a second trench between the second light-emitting device and the third light-emitting device.
9 . The apparatus of claim 1 , wherein each of the first light-emitting device, the second light-emitting device, and the third light-emitting device is a micro light-emitting device.
10 . The apparatus of claim 1 , wherein the first surface of the first light-emitting device is a top surface of an n-GaN layer of the first light-emitting device.
11 . The apparatus of claim 1 , further comprising insulating materials disposed on the conductive layer and in a plurality of trenches between the first nanoporous structure, the second nanoporous structure.
12 . A method for fabricating a display device, comprising:
fabricating a plurality of micro semiconductor devices, wherein a first micro semiconductor device of the micro semiconductor devices comprises a first nanoporous structure fabricated on a first top surface of a first light-emitting device, wherein a second micro semiconductor device of the micro semiconductor devices comprises a second nanoporous structure fabricated on a second top surface of a second light-emitting device, and wherein a third micro semiconductor device of the micro semiconductor devices comprises a third nanoporous structure fabricated on a third top surface of a third light-emitting device; and
fabricating a conductive layer comprising a conductive material, wherein the conductive layer contacts the first top surface of the first light-emitting device, the second top surface of the second light-emitting device, and the third top surface of the third light-emitting device, and wherein at least one portion of the conductive layer is fabricated in a trench between the first light-emitting device and the second light-emitting device.
13 . The method of claim 12 , further comprising:
placing a first plurality of quantum dots in the first nanoporous structure for converting light produced by the first light-emitting device into light of a first color;
placing a second plurality of quantum dots in the second nanoporous structure for light produced by the second light-emitting device into light of a second color; and
fabricating a protection layer on the first nanoporous structure and the second nanoporous structure.
14 . The method of claim 12 , further comprising:
disposing a DBR on one or more of the micro semiconductor devices; and
disposing a plurality of micro-lenses on the DBR.
15 . The method of claim 12 , wherein fabricating the plurality of micro semiconductor devices comprises:
forming a light-emitting structure and a semiconductor layer on a substrate;
forming a plurality of nanoporous structures in the semiconductor layer, and
fabricating a plurality of light-emitting devices in the light-emitting structure.
16 . The method of claim 15 , wherein fabricating the light-emitting structure and the semiconductor layer on the substrate comprises:
attaching a semiconductor device to the substrate; and
selectively removing one or more portions of the semiconductor device to expose a surface of the semiconductor layer.
17 . The method of claim 16 , wherein forming the plurality of nanoporous structures in the semiconductor layer comprises:
forming a porous semiconductor layer by etching the semiconductor layer; and
processing the porous semiconductor layer into the plurality of nanoporous structures by etching the porous semiconductor layer.
18 . The method of claim 12 , wherein fabricating the conductive layer comprises:
depositing a metallic material on a first portion of the first surface of the first light-emitting device that is not covered by the first nanoporous structure, a second portion of the second surface of the second light-emitting device that is not covered by the second nanoporous structure, and a third portion of the third surface of the third light-emitting device that is not covered by the third nanoporous structure.
19 . The method of claim 18 , wherein fabricating the conductive layer comprises:
forming a first plurality of dielectric layers covering the plurality of micro semiconductor devices;
forming a second dielectric layer in the trenches;
depositing a plurality of negative photoresists on the first plurality of dielectric layers; and
depositing a conductive material on the negative photoresists and in the trenches.
20 . The method of claim 19 , wherein fabricating the conductive layer further comprises removing the negative photoresists.