Electrostatic discharge prevention
View Patent ↗The present disclosure provides embodiments of semiconductor structures. A semiconductor structure according to the present disclosure includes a substrate, a fin-shaped structure disposed over the substrate, the fin-shaped structure including a plurality of first semiconductor layers interleaved by a plurality of second semiconductor layers, a gate structure disposed over a channel region of the fin-shaped structure, a first source/drain feature extending through at least a first portion the fin-shaped structure, a second source/drain feature extending through at least a second portion of the fin-shaped structure, and a backside metal line disposed below the substrate and spaced apart from the first source/drain feature and the second source/drain feature.
1 . A semiconductor device, comprising:
a substrate;
an elongated active region disposed over the substrate and extending along a direction, the elongated active region comprising:
a first implantation region and a second implantation region, and
an intrinsic region sandwiched between the first implantation region and the second implantation region along the direction; and
a gate structure disposed over the intrinsic region of the elongated active region,
wherein the elongated active region comprises a plurality of first semiconductor layers interleaved by a plurality of second semiconductor layers.
2 . The semiconductor device of claim 1 ,
wherein the plurality of first semiconductor layers comprise silicon,
wherein the plurality of second semiconductor layers comprise silicon germanium.
3 . The semiconductor device of claim 1 , wherein the gate structure is electrically floating.
4 . The semiconductor device of claim 1 , wherein the gate structure comprises:
a gate dielectric layer disposed on a top surface of the intrinsic region; and
a gate electrode disposed over the gate dielectric layer.
5 . The semiconductor device of claim 4 ,
wherein the gate dielectric layer comprises hafnium oxide, titanium oxide, hafnium zirconium oxide, tantalum oxide, hafnium silicon oxide, zirconium oxide, zirconium silicon oxide, or a combination thereof,
wherein the gate electrode comprises aluminum, titanium aluminide, titanium aluminum carbide, tantalum silicon carbide, tantalum silicon aluminum, tantalum silicon carbide, tantalum silicide, hafnium carbide, titanium nitride, titanium silicon nitride, tantalum nitride, tungsten carbonitride, molybdenum, tungsten, ruthenium, cobalt, copper, or a combination thereof.
6 . The semiconductor device of claim 1 ,
wherein the first implantation region comprises a first type dopant,
wherein the first implantation region comprises a second type dopant,
wherein the first type dopant and the second type dopant are of different conductivity types.
7 . The semiconductor device of claim 6 ,
wherein the first type dopant is an n-type dopant,
wherein the second type dopant is a p-type dopant.
8 . The semiconductor device of claim 1 , further comprising:
a first contact disposed on and in contact with the first implantation region; and
a second contact disposed on and in contact with the second implantation region.
9 . The semiconductor device of claim 8 , wherein the first contact comprises:
a barrier layer in contact with the first implantation region; and
a metal fill layer disposed on the barrier layer and spaced apart from the first implantation region by the barrier layer.
10 . The semiconductor device of claim 9 ,
wherein the barrier layer comprises titanium nitride, tantalum nitride, titanium, molybdenum, cobalt nitride, tungsten nitride, or titanium silicon nitride,
wherein the metal fill layer comprises tungsten, ruthenium, cobalt, nickel, or copper.
11 . A semiconductor structure, comprising:
a substrate;
an elongated active region disposed over the substrate and extending along a direction, the elongated active region comprising:
a first implantation region and a second implantation region, and
an intrinsic region sandwiched between the first implantation region and the second implantation region along the direction; and
wherein the elongated active region comprises a plurality of first semiconductor layers interleaved by a plurality of second semiconductor layers,
wherein each of the first implantation region and the second implantation region extends through a portion of the plurality of first semiconductor layers and a portion of plurality of second semiconductor layers such that each of the first implantation region and the second implantation region does not reach the substrate.
12 . The semiconductor structure of claim 11 , further comprising:
an insulation layer underlying and in contact with a bottom surface of the substrate; and
a backside metal line disposed in the insulation layer.
13 . The semiconductor structure of claim 12 , wherein the backside metal line extends continuously from an area directly below the first implantation region to an area directly below the second implantation region.
14 . The semiconductor structure of claim 11 , further comprising:
a gate structure disposed over the intrinsic region of the elongated active region.
15 . The semiconductor structure of claim 14 , wherein the gate structure is electrically floating.
16 . The semiconductor structure of claim 11 ,
wherein the plurality of first semiconductor layers comprise silicon,
wherein the plurality of second semiconductor layers comprise silicon germanium.
17 . The semiconductor structure of claim 11 ,
wherein the first implantation region comprises a first type dopant,
wherein the first implantation region comprises a second type dopant,
wherein the first type dopant and the second type dopant are of different conductivity types.
18 . A semiconductor structure, comprising:
a substrate;
an elongated active region disposed over the substrate and extending along a direction, the elongated active region comprising:
a first implantation region and a second implantation region, and
an intrinsic region sandwiched between the first implantation region and the second implantation region along the direction;
a gate structure disposed over the intrinsic region of the elongated active region;
an insulation layer underlying and in contact with a bottom surface of the substrate; and
a backside metal line disposed in the insulation layer,
wherein the elongated active region comprises a plurality of first semiconductor layers interleaved by a plurality of second semiconductor layers,
wherein each of the first implantation region and the second implantation region extends through a portion of the plurality of first semiconductor layers and a portion of plurality of second semiconductor layers such that each of the first implantation region and the second implantation region does not reach the substrate.
19 . The semiconductor structure of claim 18 ,
wherein the plurality of first semiconductor layers comprise silicon,
wherein the plurality of second semiconductor layers comprise silicon germanium.
20 . The semiconductor structure of claim 18 ,
wherein the first implantation region comprises an n-type dopant,
wherein the first implantation region comprises a p-type dopant.