Optical proximity correction and photomasks
A method includes receiving a layout for fabricating a mask, determining a plurality of target contours corresponding to a plurality of sets of lithographic process conditions, determining a modification to the layout, simulating the modification to the layout under the plurality of sets of lithographic process conditions to produce a plurality of simulated contours, determining a cost of the modification to the layout based on comparisons between the plurality of simulated contours and corresponding ones in the plurality of target contours, and providing the modification to the layout for fabricating the mask based at least in part on the cost being within a predetermined threshold.
1. A method comprising:
receiving a layout for fabricating a mask;
determining a plurality of target contours corresponding to a plurality of sets of lithographic process conditions, wherein at least two of the plurality of target contours are different;
determining a modification to the layout;
simulating the modification to the layout under the plurality of sets of lithographic process conditions to produce a plurality of simulated contours;
determining a cost of the modification to the layout based on comparisons between the plurality of simulated contours and corresponding ones in the plurality of target contours; and
providing the modification to the layout for fabricating the mask based at least in part on the cost being within a predetermined threshold.
2. The method of claim 1 , wherein determining the cost includes:
calculating edge placement errors between the plurality of simulated contours and corresponding ones in the plurality of target contours.
3. The method of claim 2 , wherein determining the cost also includes:
adding weighing factors to the edge placement errors based on the plurality of sets of lithographic process conditions.
4. The method of claim 2 , wherein determining the cost also includes:
determining penalties based on the modification to the layout under the plurality of sets of lithographic process conditions.
5. The method of claim 1 , wherein the providing of the modification to the layout for fabricating the mask is also based on the modification to the layout meeting a design rule.
6. The method of claim 1 , wherein the plurality of sets of lithographic process conditions are different from each other.
7. The method of claim 6 , wherein one of the plurality of sets of lithographic process conditions corresponds to optimal lithographic process conditions.
8. The method of claim 6 , wherein one of the plurality of sets of lithographic process conditions includes at least a lithographic process condition that has a non-optimal value.
9. The method of claim 6 , wherein one of the plurality of sets of lithographic process conditions includes at least a lithographic process condition that is an average of multiple non-optimal values.
10. The method of claim 1 , wherein the lithographic process conditions at least include lithographic dose variations and focus variations.
11. A method comprising:
receiving a layout for fabricating a mask;
determining a plurality of target contours corresponding to a plurality of sets of lithographic process conditions within a lithographic process window, wherein a first contour of the plurality of target contours is different from a second contour of the plurality of target contours;
for each of a plurality of potential modifications to the layout:
simulating a lithographic process of the respective potential modification at the plurality of sets of lithographic process conditions to produce a plurality of simulated contours;
determining edge placement errors based on comparisons between the plurality of simulated contours and corresponding ones in the plurality of target contours; and
associating a cost with the respective potential modification based at least on the edge placement errors; and
providing, for fabricating the mask, one of the plurality of potential modifications that is associated with a smallest value of the cost.
12. The method of claim 11 , wherein the first contour of the plurality of target contours corresponds to a first set of lithographic process conditions including optimal values.
13. The method of claim 12 , wherein the second contour of the plurality of target contours corresponds to a second set of lithographic process conditions including at least one non-optimal value.
14. The method of claim 12 , wherein the second contour of the plurality of target contours corresponds to a second set of lithographic process conditions including an average of a plurality of non-optimal values.
15. The method of claim 11 , wherein the cost is further based on a fabrication penalty associated with the respective potential modification.
16. The method of claim 11 , wherein the cost is based on a sum of squares of the edge placement errors.
17. A method, comprising:
receiving a layout that includes a shape corresponding to a physical feature in an integrated circuit;
determining a plurality of target contours corresponding to a plurality of sets of lithographic process conditions, wherein the sets of lithographic process conditions are different from each other;
performing a first plurality of lithographic simulations based on a first modification to the layout under the plurality of sets of lithographic process conditions to produce a first plurality of simulated contours;
performing a second plurality of lithographic simulations based on a second modification to the layout under the plurality of sets of lithographic process conditions to produce a second plurality of simulated contours;
calculating a first cost of the first modification based on comparisons between the first plurality of simulated contours and corresponding ones in the plurality of target contours;
calculating a second cost of the second modification based on comparisons between the second plurality of simulated contours and corresponding ones in the plurality of target contours;
selecting one of the first and second modifications based on a smaller one of the first and second costs; and
providing the layout and the selected one of the first and second modifications for fabricating a mask in association with the integrated circuit.
18. The method of claim 17 , wherein the lithographic process conditions include parameters selected from the group consisting of mask error, focus variation, and lithographic dose variation.
19. The method of claim 17 , wherein one of the plurality of sets of lithographic process conditions corresponds to optimal lithographic process conditions, and another one of the plurality of sets of lithographic process conditions includes at least a lithographic process condition that is non-optimal.
20. The method of claim 17 , wherein the calculating of the first and second costs is further based on a fabrication penalty associated with the respective modification.