Semiconductor device and method of manufacturing semiconductor device
A semiconductor device may include a first contact plug, a word line electrically connected to the first contact plug and extending in a first direction, a second contact plug, a bit line extending in a second direction that intersects the first direction, and a memory cell disposed between the word line and the bit line and including a variable resistance layer. The bit line may include a first protruding part that protrudes into the memory cell, a second protruding part that is connected to the second contact plug, and a connection part that connects the first protruding part and the second protruding part and that extends in the second direction.
1. A semiconductor device comprising:
a first contact plug;
a word line electrically connected to the first contact plug and extending in a first direction;
a second contact plug;
a bit line extending in a second direction that intersects the first direction; and
a memory cell disposed between the word line and the bit line and comprising a variable resistance layer,
wherein the bit line comprises a first protruding part that protrudes into the memory cell, a second protruding part that is connected to the second contact plug, and a connection part that connects the first protruding part and the second protruding part and that extends in the second direction.
2. The semiconductor device of claim 1 , wherein the variable resistance layer surrounds a sidewall and a bottom of the first protruding part.
3. The semiconductor device of claim 1 , wherein the memory cell further comprises an electrode layer disposed between the variable resistance layer and the first protruding part.
4. The semiconductor device of claim 1 , wherein the first protruding part comprises:
a first conductive layer disposed within the variable resistance layer;
a barrier layer disposed within the first conductive layer; and
a second conductive layer disposed within the barrier layer.
5. The semiconductor device of claim 1 , wherein the second protruding part comprises:
a barrier layer, and
a second conductive layer disposed within the barrier layer.
6. The semiconductor device of claim 1 , wherein the connection part comprises:
a first conductive layer;
a barrier layer disposed on the first conductive layer; and
a second conductive layer disposed on the barrier layer.
7. The semiconductor device of claim 1 , further comprising a separation insulating layer disposed on the second contact plug,
wherein the second protruding part is electrically connected to the second contact plug and extends through the separation insulating layer.
8. A method of manufacturing a semiconductor device, comprising:
forming a first contact plug;
forming a word line connected to the first contact plug and extending in a first direction;
forming a second contact plug;
forming a separation insulating layer on the second contact plug;
forming a first opening within the word line;
forming a second opening that exposes the second contact plug through the separation insulating layer; and
forming a bit line comprising a first protruding part extending in a second direction and disposed within the first opening, a second protruding part disposed within the second opening, and a connection part connecting the first protruding part and the second protruding part, the second direction intersecting the first direction.
9. The method of claim 8 , further comprising forming a variable resistance layer within the first opening.
10. The method of claim 9 , wherein the forming of the variable resistance layer comprises forming the variable resistance layer along an inner side of the first opening with a thickness sufficient to partially fill the first opening.
11. The method of claim 8 , further comprising forming a first conductive layer within the first opening before forming the second opening.
12. The method of claim 11 , wherein the forming of the first conductive layer comprises forming the first conductive layer along an inner side of the first opening with a thickness to partially fill the first opening.
13. The method of claim 8 , wherein the forming of the second opening comprises forming the second opening when the first opening has been at least partially filled.
14. The method of claim 8 , wherein the forming of the bit line comprises:
forming a second conductive layer along inner sides of the first opening and the second opening; and
forming the bit line by patterning the second conductive layer.
15. The method of claim 14 , further comprising forming a barrier layer before forming the second conductive layer.
16. The method of claim 8 , wherein the second protruding part of the bit line is electrically connected to the second contact plug.
17. The method of claim 8 , wherein when the first contact plug is formed, the second contact plug is formed.