Solar cell, manufacturing method thereof, and photovoltaic module
Provided are a solar cell, including: a semiconductor substrate, in which a rear surface of the semiconductor substrate having non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm; a first passivation layer located on a front surface of the semiconductor substrate; first and second tunnel oxide layers located on the non-pyramid-shaped microstructures; first and second doped conductive layers located on a surface of the first and second tunnel oxide layers, the first and second doped conductive layer has different conductive types; a second passivation layer located on a surface of the first and second doped conductive layers; and electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.
1. A solar cell, comprising:
a semiconductor substrate, wherein a rear surface of the semiconductor substrate includes non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, a surface of the first substructure is a polygonal plane, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm;
a first passivation layer located on a front surface of the semiconductor substrate;
a first tunnel oxide layer and a second tunnel oxide layer located on the non-pyramid-shaped microstructures of the rear surface of the semiconductor substrate;
a first doped conductive layer located on a surface of the first tunnel oxide layer, and a second doped conductive layer located on a surface of the second tunnel oxide layer, wherein the first doped conductive layer has a conductive type different from the second doped conductive layer;
a second passivation layer located on a surface of the first and second doped conductive layers; and
electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.
2. The solar cell according to claim 1 , wherein the front surface of the semiconductor substrate includes pyramid-shaped microstructures, the pyramid-shaped microstructures include a top portion away from the front surface of the semiconductor substrate and a bottom portion close to the front surface of the semiconductor substrate, and in a direction away from the front surface and perpendicular to the front surface, a distance between the top portion and the bottom portion of the pyramid-shaped microstructures is less than or equal to 5 μm.
3. The solar cell according to claim 1 , wherein the first doped conductive layer and the second doped conductive layer are spaced from each other by a separation region.
4. The solar cell according to claim 1 , wherein the electrode includes a first type electrode electrically connected to the first doped conductive layer and a second type electrode electrically connected to the second doped conductive layer.
5. The solar cell according to claim 1 , wherein for the two or more first substructures at least partially stacked on one another, in the direction away from the rear surface and perpendicular to the rear surface, a distance between the surface of the outermost first substructure and the surface of the adjacent first substructure is equal to or less than 2 μm.
6. The solar cell according to claim 1 , wherein a shape of the polygonal plane of the first substructure includes at least one of a diamond, a square, a trapezoid, a substantially diamond, a substantially square or a substantially trapezoid.
7. The solar cell according to claim 1 , wherein the non-pyramid-shaped microstructures include two or more adjacent second substructures that do not stacked on one another, and a one-dimensional size of a surface of the second substructure away from the rear surface is less than or equal to 45 μm.
8. The solar cell according to claim 7 , wherein the surface of the second substructure is a polygonal plane.
9. The solar cell according to claim 8 , wherein a shape of the polygonal plane of the second substructure includes at least one of a diamond, a square, a trapezoid, a substantially diamond, a substantially square or a substantially trapezoid.
10. The solar cell according to claim 1 , wherein the second passivation layer includes at least one of a silicon nitride layer, a silicon oxide layer or a silicon oxynitride layer.
11. The solar cell according to claim 10 , wherein the second passivation layer has a thickness ranging from 70 nm to 120 nm.
12. The solar cell according to claim 1 , wherein the first tunnel oxide layer or the second tunnel oxide layer includes at least one of a silicon oxide layer, an aluminum oxide layer, a silicon oxynitride layer, a molybdenum oxide layer or a hafnium oxide layer.
13. The solar cell according to claim 12 , wherein the first tunnel oxide layer or the second tunnel oxide layer has a thickness ranging from 0.8 nm to 2 nm.
14. The solar cell according to claim 1 , wherein a band gap width of the first tunnel oxide layer or the second tunnel oxide layer is greater than 3.0 eV.
15. The solar cell according to claim 1 , wherein the first passivation layer includes at least one of a silicon oxide layer, an aluminum oxide layer, a silicon nitride layer or a silicon oxynitride layer, wherein the first passivation layer has a thickness ranging from 10 nm to 120 nm.
16. The solar cell according to claim 15 , wherein the first passivation layer is a stacked layer of an aluminum oxide layer, a silicon nitride layer and a silicon oxynitride layer.
17. The solar cell according to claim 16 , wherein the aluminum oxide layer has a thickness ranging from 2 nm to 10 nm.
18. The solar cell according to claim 16 , wherein the silicon nitride layer has a thickness ranging from 40 nm to 80 nm.
19. The solar cell according to claim 16 , wherein the silicon oxynitride layer has a thickness ranging from 10 nm to 60 nm.
20. A photovoltaic module, comprising:
a plurality of solar cell strings, wherein each of the plurality of solar cell strings comprises solar cells, and at least one of the solar cells comprises
a semiconductor substrate, wherein a rear surface of the semiconductor substrate includes non-pyramid-shaped microstructures, the non-pyramid-shaped microstructures include two or more first substructures at least partially stacked on one another, a surface of the first substructure is a polygonal plane, and a one-dimensional size of the surface of the outermost first substructure is less than or equal to 45 μm;
a first passivation layer located on a front surface of the semiconductor substrate;
a first tunnel oxide layer and a second tunnel oxide layer located on non-pyramid-shaped microstructures of the rear surface of the semiconductor substrate;
a first doped conductive layer located on a surface of the first tunnel oxide layer, and a second doped conductive layer located on a surface of the second tunnel oxide layer, wherein the first doped conductive layer has a conductive type different from the second doped conductive layer; and
a second passivation layer located on a surface of the first and second doped conductive layers; and
electrodes formed by penetrating through the second passivation layer to be in contact with the first and second doped conductive layers.