IP Library › Granted Patent US 12,457,435
Granted Patent B2
US 12,457,435 · App. 18/368,182 · Granted Oct 28, 2025

Photoelectric conversion device, control method, and storage medium with image correction processing

Inventors: Aihiko Numata (Tokyo, JP); Kan Takaiwa (Tokyo, JP)
Assignee: Canon Kabushiki Kaisha
H04N25/773H04N25/51
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Quick Facts
Patent No.
US 12,457,435
App. No.
18/368,182
Granted
Oct 28, 2025
Kind
B2
Abstract

To provide a photoelectric conversion device that has an avalanche photodiode and can suppress image quality deterioration, in a photoelectric conversion device, a photoelectric conversion element including an avalanche photodiode for photoelectrically converting an optical image, an image generation unit configured to generate a first image based on a signal acquired by the photoelectric conversion element, an acquisition unit configured to acquire first characteristic information of the photoelectric conversion element, and a correction processing unit configured to perform first correction processing on the first image by using the first characteristic information are provided, and in the correction processing unit, weighting of the first correction processing is made different according to a magnitude of a pixel signal in the first image.

Claims (51)

1 . A photoelectric conversion device comprising:

a photoelectric conversion element including an avalanche photodiode for photoelectrically converting an optical image; and

at least one processor or circuit configured to function as:

an image generation unit configured to generate a first image based on a signal acquired by the photoelectric conversion element;

an acquisition unit configured to acquire first characteristic information of the photoelectric conversion element; and

a correction processing unit configured to perform first correction processing on the first image by using the first characteristic information,

wherein, in the correction processing unit, a weighting coefficient of the first correction processing is made different according to a magnitude of a pixel signal in the first image, and

wherein the first correction processing includes processing of extracting a defective pixel in the first image, and the weighting coefficient of the first correction processing is changed between the defective pixel and other pixels.

2 . The photoelectric conversion device according to claim 1 , wherein the first characteristic information is two-dimensional array data, and one-dimensional data corresponding to at least one row or one column of the two-dimensional array data has a peak value at the center.

3 . The photoelectric conversion device according to claim 1 , wherein the weighting coefficient of the first correction processing is smaller for the defective pixel than for other pixels.

4 . The photoelectric conversion device according to claim 3 , wherein the weighting coefficient of the first correction processing is set to be smaller for the defective pixel having a larger difference in pixel signal with respect to surrounding pixels.

5 . The photoelectric conversion device according to claim 1 , wherein, in the processing of extracting the defective pixel, the defective pixel is extracted by comparing an output of each pixel of the first image and outputs of surrounding pixels.

6 . The photoelectric conversion device according to claim 1 , wherein the first correction processing includes processing of performing a convolution operation on the first image by multiplying the first characteristic information by a weighting coefficient.

7 . The photoelectric conversion device according to claim 6 , wherein the first correction processing includes processing of extracting a defective pixel having a pixel signal larger than those of surrounding pixels in the first image, and the larger one of the calculation results of the convolution operation for the plurality of defective pixels is used in share.

8 . The photoelectric conversion device according to claim 1 , wherein the photoelectric conversion element includes a quenching element connected to a power supply line and one of an anode and a cathode of the avalanche photodiode, and a signal generation unit configured to supply a control signal for controlling an operation of the quenching element.

9 . The photoelectric conversion device according to claim 8 , wherein the first correction processing corrects nonlinearity so as to satisfy the following formula, where f is a frequency of the control signal, T is a length of an exposure time, Nph is the number of input signals, and Nct is the number of output signals,

Nph

=

-

fT

×

ln

(

1

-

Nct

fT

)

.

10 . The photoelectric conversion device according to claim 9 , wherein the first correction processing includes processing of performing nonlinear correction processing on the first image.

11 . The photoelectric conversion device according to claim 1 , wherein the at least one processor or circuit is further configured to function as:

a gain adjustment unit configured to apply a gain to the first image.

12 . The photoelectric conversion device according to claim 11 , wherein a weighting coefficient of the first correction processing is increased as a value of a signal gain applied by the gain adjustment unit is higher.

13 . The photoelectric conversion device according to claim 12 , further comprising a quenching element in which the photoelectronic conversion device is connected to a power supply line and to one of an anode and a cathode of the avalanche photodiode,

wherein the at least one processor or circuit is further configured to function as:

a signal generation unit configured to supply a control signal for controlling an operation of the quenching element, and

wherein a value of the gain applied in the gain adjustment unit is increased as a frequency of the control signal is lower.

14 . The photoelectric conversion device according to claim 13 , wherein weighting of the first correction processing is increased as a frequency of the control signal is lower.

15 . The photoelectric conversion device according to claim 1 , wherein the first characteristic information relates to a crosstalk characteristic between pixels caused by an avalanche light emission phenomenon.

16 . A control method for controlling a photoelectric conversion device having a photoelectric conversion element including an avalanche photodiode for photoelectrically converting an optical image, the control method comprising:

generating a first image based on a signal acquired by the photoelectric conversion element;

acquiring first characteristic information of the photoelectric conversion element; and

performing correction processing including first correction processing on the first image by using the first characteristic information,

wherein, in the correction processing, a weighting coefficient of the first correction processing is made different depending on a magnitude of a pixel signal in the first image, and

wherein the first correction processing includes processing of extracting a defective pixel in the first image, and the weighting coefficient of the first correction processing is changed between the defective pixel and other pixels.

17 . A non-transitory computer-readable storage medium storing a computer program to control a photoelectric conversion device having a photoelectric conversion element including an avalanche photodiode for photoelectrically converting an optical image, wherein the computer program comprises instructions for executing following processes:

generating a first image based on a signal acquired by the photoelectric conversion element;

acquiring first characteristic information of the photoelectric conversion element; and

performing correction processing including first correction processing on the first image by using the first characteristic information,

wherein, in the correction processing, a weighting coefficient of the first correction processing is made different according to a magnitude of a pixel signal in the first image, and

wherein the first correction processing includes processing of extracting a defective pixel in the first image, and the weighting coefficient of the first correction processing is changed between the defective pixel and other pixels.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2023
From: NUMATA, AIHIKO; TAKAIWA, KAN
To: CANON KABUSHIKI KAISHA
Reel/Frame 064977/0798 →
Priority Claims (1)
JP 2022-154574 · Sep 28, 2022 · national
Continuity (1)
Related Publication 20240107199A1 · Mar 28, 2024
References Cited (23)
US 9319607B2 · Numata · 2016 [cited by applicant]
US 9402041B2 · Numata · 2016 [cited by applicant]
US 9470825B2 · Numata et al. · 2016 [cited by applicant]
US 10362279B2 · Jeong · 2019 [cited by examiner]
US 12219278B2 · Morimoto et al. · 2025 [cited by applicant]
US 12267601B2 · Wang · 2025 [cited by examiner]
US 20150170376A1 · Bishop · 2015 [cited by examiner]
US 20160309102A1 · Koizumi · 2016 [cited by applicant]
US 20170085849A1 · Jeong · 2017 [cited by examiner]
US 20180275252A1 · Fried et al. · 2018 [cited by applicant]
US 20210029315A1 · Sakato · 2021 [cited by examiner]
US 20220280042A1 · Antaris · 2022 [cited by examiner]
US 20230020674A1 · Kim · 2023 [cited by examiner]
US 20230048442A1 · Moreira · 2023 [cited by examiner]
US 20240098381A1 · Takado · 2024 [cited by examiner]
US 20240107192A1 · Numata · 2024 [cited by examiner]
US 20240292124A1 · Takaiwa · 2024 [cited by examiner]
EP 4228278A1 · 2023 [cited by applicant]
Quan Chau et al., Analysis and Modeling of Optical Crosstalk in InP-based Geiger-mode Avalanche Photodiode FPAs, Proceedings of SPIE, IEEE, vol. 9492 (May 13, 2015). [cited by applicant]
Search Report dated Feb. 1, 2024, in European Patent Application No. 23199070.6. [cited by applicant]
Rech et al., “Optical crosstalk in single photon avalanche diode arrays: a new complete model”, OpEx, 16 (12), 2008. [cited by applicant]
U.S. Appl. No. 18/368,108, filed Sep. 14, 2023 (First Named Inventor: Aihiko Numata). [cited by applicant]
Official Communication dated May 6, 2025, in European Patent Application No. 23199070.6. [cited by applicant]