Writer with patterned hot seed layer
The present embodiments relate to a write head design with a patterned hot seed (HS). Particularly, the HS can be patterned as part of a multi-step patterning process that can partially or completely remove portions of the HS at multiple sides to form various designs. For example, the HS can have a two-step cliff design, etching multiple steps around an un-patterned center portion, and a flared angle. The designs of the patterned HS can improve write head performance.
1 . A write head for a disk drive, the write head comprising:
a main pole (MP);
a trailing shield (TS);
a write gap (WG) between the MP and TS; and
a hot seed (HS) deposited on top of the WG and extending into an air-bearing surface (ABS) of the write head, wherein the HS comprises a top portion and one or more steps and a flared end with a pair of opposing sides of the HS disposed in parallel with one another at a flared angle relative to the ABS such that a thickness of the flared end is substantially uniform along the flared end, the top portion being disposed between the opposing sides of the flared end in a cross track direction, perpendicular to a direction extending between the MP and the TS, and wherein the top portion of the HS comprises a central portion that comprises a rectangular shape with sides that are disposed perpendicular to the ABS and a thickness that extends to a top of the HS, and etched side portions each disposed adjacent to the central portion and comprising a thickness less than that of the central portion.
2 . The write head of claim 1 , wherein the HS comprises two discrete steps etched in the HS that are etched to an etching depth.
3 . The write head of claim 2 , wherein the etching depth is between 1 nm to 100 nm, and wherein a width of the central portion is between 50 nm to 400 nm.
4 . The write head of claim 3 , wherein the central portion extends to the ABS, and wherein the central portion comprises an angle between 0 degrees to 70 degrees relative to the ABS.
5 . The write head of claim 3 , wherein part of the central portion adjacent to the ABS is etched, wherein the etching depth of the part of the central portion is between 1 nm and 300 nm.
6 . The write head of claim 5 , wherein a remaining part of the central portion is a curve in an oval or circular shape, or includes a flared angle ranging from 0 degrees to 70 degrees.
7 . The write head of claim 1 , wherein a thickness of the HS is between 40-200 nanometers (nm) and a width of the HS is between 50-400 nm, and wherein the flared angle is between 20-50 degrees relative to the ABS.
8 . The write head of claim 1 , wherein the HS is patterned using an etching process or between a multiple step process including performing multiple etching steps on top of each layer of the HS.
9 . The write head of claim 1 , wherein the HS includes a first part and a second part, wherein a first part is disposed adjacent to the WG and is narrower than the second part, wherein a dishing angle is formed between the first part and second part with the dishing angle being between 20 degrees and 150 degrees, and wherein a thickness of the first part is between 1 nm to 100 nm.
10 . The write head of claim 1 , wherein a width of the central portion is between 50 nm to 400 nm.
11 . A device comprising:
a main pole (MP) configured to concentrate a magnetic flux;
a trailing shield (TS);
a write gap (WG) between the MP and TS, the WG comprising a non-magnetic material;
a side shield and a leading shield disposed adjacent to the MP and configured to prevent magnetic flux from reaching areas outside of a desired area; and
a hot seed (HS) deposited on the WG and extending into an air-bearing surface (ABS), wherein the HS comprises a top portion and one or more steps and a flared end with a pair of opposing sides of the HS disposed in parallel with one another at a flared angle relative to the ABS such that a thickness of the flared end is substantially uniform along the flared end, the top portion being disposed between the opposing sides of the flared end in a cross track direction, perpendicular to a direction extending between the MP and the TS, and wherein the top portion of the HS comprises a central portion that comprises a rectangular shape with sides that are disposed perpendicular to the ABS and a thickness that extends to a top of the HS, and etched side portions each disposed adjacent to the central portion and comprising a thickness less than that of the central portion.
12 . The device of claim 11 , wherein the HS comprises two discrete steps etched in the HS that are etched to an etching depth.
13 . The device of claim 12 , wherein the etching depth is between 1 nm to 100 nm, and wherein a width of the central portion is between 50 nm to 400 nm.
14 . The device of claim 13 , wherein the central portion extends to the ABS, and wherein the central portion comprises an angle between 0 degrees to 70 degrees relative to the ABS.
15 . The device of claim 13 , wherein part of the central portion adjacent to the ABS is etched, wherein the etching depth of the part of the central portion is between 1 nm and 300 nm.
16 . The device of claim 15 , wherein a remaining part of the central portion is a curve in an oval or circular shape, or includes a flared angle ranging from 0 degrees to 70 degrees.
17 . The device of claim 11 , wherein a thickness of the HS is between 40-200 nanometers (nm) and a width of the HS is between 50-400 nm, and wherein the flared angle is between 20-50 degrees relative to the ABS.
18 . The device of claim 11 , wherein the HS is patterned using an etching process or between a multiple step process including performing multiple etching steps on top of each layer of the HS.
19 . The device of claim 11 , wherein the HS includes a first part and a second part, wherein a first part is disposed adjacent to the WG and is narrower than the second part, wherein a dishing angle is formed between the first part and second part with the dishing angle being between 20 degrees and 150 degrees, and wherein a thickness of the first part is between 1 nm to 100 nm.