Circuit and method for controlling a transistor
A method for controlling a MOS transistor compares a first voltage between a drain and a source of the MOS transistor to a second controllable threshold voltage. When the first voltage is smaller than a third voltage, a fourth control voltage is applied to the MOS transistor that is greater than a fifth threshold voltage of the MOS transistor. When the first voltage is greater than the second voltage, the fourth control voltage applied to the MOS transistor is smaller than the fifth voltage. The second voltage is equal to a first constant value between a first time and a second time, and is equal to a second variable value between the second time and a third time. The second value is equal to a sum of the first voltage and a sixth positive voltage. The third time corresponds to a time when the first voltage inverts.
1. A method for controlling an N-channel MOS transistor, comprising:
comparing a first voltage between a drain and a source of the N-channel MOS transistor to a second controllable threshold voltage and a third voltage;
when the first voltage is smaller than the third voltage, applying a fourth control voltage between a gate and the source of the N-channel MOS transistor at a level that is greater than a fifth threshold voltage of the N-channel MOS transistor; and
when the first voltage is greater than the second controllable threshold voltage, applying the fourth control voltage between the gate and the source of the N-channel MOS transistor at a level that is smaller than the fifth threshold voltage of said transistor;
wherein said second controllable threshold voltage is equal to a first constant value between a first time and a second time; and is equal to a second variable value between the second time and a third time;
said second variable value being equal to a sum of the first voltage and a sixth positive voltage; and
wherein the third time corresponds to a time when the first voltage inverts.
2. The method according to claim 1 , wherein the first constant value is about 0 V.
3. The method according to claim 1 , wherein a first duration comprised between the first time and the second time is a constant duration corresponding to one third of a second duration, said second duration corresponding to one third of a whole duration of a conduction cycle of the N-channel MOS transistor.
4. The method according to claim 1 , further comprising:
before a fourth time comprised between the first time and the third time, applying the fourth control voltage at a third value greater than the fifth threshold voltage of said transistor; and
between the fourth time and the third time, applying the fourth control voltage reduced up to a fourth value.
5. The method according to claim 4 , wherein, between the fourth time and the third time, the fourth value is reached when the first voltage is equal to a seventh voltage.
6. The method according to claim 5 , wherein the seventh voltage is equal to a multiplication of a factor by the third voltage representing a voltage level between the drain and source terminals of the N-channel MOS transistor that is reached when a parasitic diode of the N-channel MOS transistor is conductive.
7. The method according to claim 6 , wherein said factor comprises between one third and two thirds.
8. The method according to claim 4 , wherein the fourth time is between the second time and the third time.
9. A control circuit configured to implement the method according to claim 1 .
10. An electronic device comprising a control circuit according to claim 9 .
11. The device according to claim 10 , further comprising said N-channel MOS transistor, and a driving circuit of said N-channel MOS transistor.
12. A device for converting a voltage comprising the device according to claim 10 .
13. The device according to claim 12 , being a transformer switched converter.
14. The device according to claim 12 , being a converter of the up converter type.
15. The device according to claim 12 , being a Buck type converter.
16. A method for controlling an N-channel MOS transistor, comprising:
comparing a drain to source voltage of the N-channel MOS transistor to a first threshold voltage, wherein said first threshold voltage corresponds to inversion of the drain to source voltage;
comparing the drain to source voltage of the N-channel MOS transistor to a second threshold voltage, wherein said second threshold voltage is representative of a voltage level between drain and source terminals of the N-channel MOS transistor where a parasitic diode of the N-MOS transistor becomes conductive; and
applying a control voltage to a gate of the N-channel MOS transistor;
wherein said control voltage is greater than a threshold voltage of the N-channel MOS transistor when the drain to source voltage is smaller than the second threshold voltage;
wherein said control voltage is smaller than the threshold voltage of the N-channel MOS transistor when the drain to source voltage is greater than the first threshold voltage;
wherein said first threshold voltage is equal to a first constant value between a first time and a second time and is equal to a second variable value between the second time and a third time; and
wherein the third time corresponds to a time when the drain to source voltage inverts.
17. The method according to claim 16 , wherein the second variable value is equal to a sum of the drain to source voltage and a positive voltage.
18. The method according to claim 16 , further comprising before a fourth time comprised between the first time and the third time, applying the control voltage at a value greater than the threshold voltage of the N-channel MOS transistor.
19. The method according to claim 18 , further comprising between the fourth time and the third time, reducing the control voltage.
20. A control circuit configured to implement the method according to claim 16 .
21. An electronic device comprising a control circuit according to claim 20 .