IP Library Granted Patent US 12,391,026
Granted Patent B2
US 12,391,026 · App. 18/379,285 · Granted Aug 19, 2025

Vacuum insulated panel with CTE optimized edge seal

Inventor: Scott V. Thomsen (Glen Arbor, MI)
Assignee: LuxWall, Inc.
B32B17/10036B01J20/0211B01J20/0214B01J20/0248B23K26/206B23K26/324B32B17/00B32B17/068B32B17/10005C03B23/245C03C3/062C03C4/0071C03C8/02C03C27/06C03C27/08E06B3/6612E06B3/66304E06B3/66333E06B3/66342E06B3/673E06B3/67334E06B3/6736F16J15/062B23K26/57B23K2103/52B23K2103/54C03C2204/00C03C2207/00E06B2003/66338E06B3/6775
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Quick Facts
Patent No.
US 12,391,026
App. No.
18/379,285
Granted
Aug 19, 2025
Kind
B2
Abstract

A vacuum insulating panel includes first and second substrates (e.g., glass substrates), a hermetic edge seal, a pump-out port, and spacers sandwiched between at least the two substrates. The gap between the substrates may be at a pressure less than atmospheric pressure to provide insulating properties. The vacuum insulating panel may include a multi-layer edge seal structure with coefficients of thermal expansion (CTEs) of layers of the seal structure optimized for CTE grading.

Claims (57)

1. A vacuum insulating panel comprising:

a first glass substrate;

a second glass substrate;

a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure;

a seal provided at least partially between at least the first and second substrates, the seal comprising a first seal layer, a second seal layer, and a third seal layer, wherein the first seal layer is at least partially located between at least the second and third seal layers;

wherein a coefficient of thermal expansion (CTE) of the second seal layer is greater than a CTE of the first seal layer, a CTE of the third seal layer is greater than the CTE of the first seal layer, the CTE of the second seal layer is less than a CTE of the first glass substrate, and the CTE of the third seal layer is less than a CTE of the second glass substrate; and

wherein the CTE of the first seal layer is from about 7.0 to 7.9×10 −6 mm/(mm*deg. C.), the CTE of the second seal layer is from about 8.0 to 8.8×10 −6 mm/(mm*deg. C.), the CTE of the third seal layer is from about 8.0 to 8.8×10 −6 mm/(mm*deg. C.), the CTE of the first glass substrate is from about 8.7 to 9.3×10 −6 mm/(mm*deg. C.), and the CTE of the second glass substrate is from about 8.7 to 9.3×10 −6 mm/(mm*deg. C.).

2. The vacuum insulating panel of claim 1 , wherein the CTE of the first seal layer is from about 7.2 to 7.9×10 −6 mm/(mm*deg. C.).

3. The vacuum insulating panel of claim 1 , wherein the CTE of the first seal layer is about 7.6×10 −6 mm/(mm*deg. C.).

4. The vacuum insulating panel of claim 1 , wherein CTE of at least one of the second and third seal layers is from about 8.3 to 8.6×10 −6 mm/(mm*deg. C.).

5. The vacuum insulating panel of claim 1 , wherein CTE of at least one of the first and second glass substrates is from about 8.8 to 9.2×10 −6 mm/(mm*deg. C.).

6. The vacuum insulating panel of claim 1 , wherein at least one of the second seal layer and the third seal layer comprises from about 1-20 mol % bismuth oxide and from about 20-65 mol % boron oxide, and comprises at least two times more boron oxide than bismuth oxide in terms of mol %.

7. The vacuum insulating panel of claim 1 , wherein at least one of the second seal layer and the third seal layer comprises from about 30-60 mol % boron oxide.

8. The vacuum insulating panel of claim 7 , wherein the at least one of the second seal layer and the third seal layer comprises from about 1-12 mol % bismuth oxide and from about 0-50 mol % silicon oxide.

9. The vacuum insulating panel of claim 8 , wherein the at least one of the second seal layer and the third seal layer comprises from about 40-55 mol % boron oxide.

10. The vacuum insulating panel of claim 7 , wherein the at least one of the second seal layer and the third seal layer comprises from about 0-20 mol % titanium oxide.

11. The vacuum insulating panel of claim 6 , wherein the at least one of the second seal layer and the third seal layer comprises at least three times more boron oxide than bismuth oxide in terms of mol %.

12. The vacuum insulating panel of claim 6 , wherein the at least one of the second seal layer and the third seal layer comprises at least four times more boron oxide than bismuth oxide in terms of mol %.

13. The vacuum insulating panel of claim 6 , wherein the at least one of the second seal layer and the third seal layer comprises more boron oxide than bismuth oxide in terms of wt. %.

14. The vacuum insulating panel of claim 6 , wherein the at least one of the second seal layer and the third seal layer comprises, in terms of mol %, from about 4-9% bismuth oxide, from about 40-55% boron oxide, from about 15-35% silicon oxide, and from about 3-12% titanium oxide.

15. The vacuum insulating panel of claim 1 , wherein at least one of the second seal layer and the third seal layer has an average particle size (D50) of from about 2-15 μm.

16. The vacuum insulating panel of claim 1 , wherein at least one of the second seal layer and the third seal layer has an average particle size (D50) of from about 3-8 μm.

17. The vacuum insulating panel of claim 1 , wherein a thermal conductivity of the second seal layer is greater than a thermal conductivity of the first seal layer.

18. The vacuum insulating panel of claim 17 , wherein the second seal layer has a thermal conductivity of from 1.0 to 1.90 W/mK, and the first seal layer has a thermal conductivity of from 0.80 to 1.00 W/mK.

19. The vacuum insulating panel of claim 17 , wherein the second seal layer has a thermal conductivity of from about 1.10 to 1.50 W/mK, and the first seal layer has a thermal conductivity of from about 0.80 to 0.95 W/mK.

20. The vacuum insulating panel of claim 1 , wherein the first seal layer has a density of from about 2.8-4.0 g/cm 3 , the second seal layer has a density of from about 3.0-4.2 g/cm 3 , the third seal layer has a density of from about 3.0-4.2 g/cm 3 , and wherein the density of the second and/or third seal layer is at least about 0.20 g/cm 3 greater than the density of the first seal layer.

21. The vacuum insulating panel of claim 1 , wherein the second and third seal layers each have a bridging oxygen (BO) content of at least about 80%.

22. The vacuum insulating panel of claim 1 , wherein the second and third seal layers each have a bridging oxygen (BO) content of at least about 85%.

23. The vacuum insulating panel of claim 1 , wherein the first seal layer comprises tellurium oxide and vanadium oxide, and by wt. % comprises more tellurium oxide than vanadium oxide.

24. The vacuum insulating panel of claim 1 , wherein the first seal layer comprises from about 40-70 wt. % tellurium oxide.

25. The vacuum insulating panel of claim 24 , wherein from about 60-95% of Te in the first seal layer is in a form of TeO 3 , and from about 3-35% of Te in the first seal layer is in a form of TeO 4 .

26. The vacuum insulating panel of claim 25 , wherein the tellurium oxide further comprises TeO 3+1 , and wherein the first seal layer comprises more TeO 3 than TeO 3+1 by wt. %.

27. The vacuum insulating panel of claim 23 , wherein the vanadium oxide comprises VO 2 and V 2 O 5 , and wherein more V in the first seal layer is in a form of VO 2 than V 2 O 5 .

28. The vacuum insulating panel of claim 1 , wherein the first seal layer is a main seal layer, and the second and third seal layers are primer layers.

29. The vacuum insulating panel of claim 1 , wherein for at least one location of the seal, the first seal layer has a first thickness, the second seal layer has a second thickness, and the third seal layer has a third thickness; and wherein the first thickness is greater than the second thickness and less than the third thickness.

30. The vacuum insulating panel of claim 1 , wherein the seal is substantially lead-free.

31. The vacuum insulating panel of claim 1 , wherein the first seal layer has a physical thickness of from about 40-100 μm.

32. The vacuum insulating panel of claim 31 , wherein the second seal layer has a physical thickness of from about 20-70 μm, and the third seal layer has a physical thickness of from about 100-220 μm.

33. The vacuum insulating panel of claim 1 , wherein the second seal layer has a melting point (Tm) at least 100 degrees C. higher than a melting point of the first seal layer.

34. The vacuum insulating panel of claim 1 , wherein the second seal layer has a melting point (Tm) at least 150 degrees C. higher than a melting point of the first seal layer.

35. The vacuum insulating panel of claim 1 , wherein the first and second substrates comprise tempered glass substrates or heat strengthened glass substrates.

36. The vacuum insulating panel of claim 1 , wherein the seal is a hermetic edge seal of the vacuum insulating panel.

37. The vacuum insulating panel of claim 1 , wherein the panel is configured for use in a window.

38. A vacuum insulating panel comprising:

a first glass substrate;

a second glass substrate;

a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure;

a seal provided at least partially between at least the first and second substrates, the seal comprising a first seal layer and a second seal layer, wherein the second seal layer is located between the first seal layer and one of the glass substrates;

wherein a coefficient of thermal expansion (CTE) of the second seal layer is greater than a CTE of the first seal layer; and

wherein the CTE of the first seal layer is from about 7.0 to 7.9×10 −6 mm/(mm*deg. C.), the CTE of the second seal layer is from about 8.0 to 8.8×10 −6 mm/(mm*deg. C.), the CTE of the first glass substrate is from about 8.7 to 9.3×10 −6 mm/(mm*deg. C.), and the CTE of the second glass substrate is from about 8.7 to 9.3×10 −6 mm/(mm*deg. C.).

39. The vacuum insulating panel of claim 38 , wherein the CTE of the first seal layer is from about 7.2 to 7.9×10 −6 mm/(mm*deg. C.).

40. The vacuum insulating panel of claim 38 , wherein the CTE of the first seal layer is about 7.6×10 −6 mm/(mm*deg. C.).

41. The vacuum insulating panel of claim 38 , wherein CTE of the second seal layer is from about 8.3 to 8.6×10 −6 mm/(mm*deg. C.).

42. The vacuum insulating panel of claim 38 , wherein CTE of the first and second glass substrates is from about 8.8 to 9.2×10 −6 mm/(mm*deg. C.).

43. The vacuum insulating panel of claim 38 , wherein the second seal layer comprises from about 1-20 mol % bismuth oxide and from about 20-65 mol % boron oxide, and comprises at least two times more boron oxide than bismuth oxide in terms of mol %.

44. The vacuum insulating panel of claim 43 , wherein the first seal layer comprises tellurium oxide and vanadium oxide.

45. The vacuum insulating panel of claim 38 , wherein the first seal layer comprises from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO 4 and TeO 3 , and wherein the first seal layer comprises more TeO 3 than TeO 4 by wt. %.

Assignments (2)
SECURITY INTEREST Recorded Feb 19, 2026
From: LUXWALL, INC.
To: FIRST-CITIZENS BANK & TRUST COMPANY
Reel/Frame 074938/0702 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2023
From: THOMSEN, SCOTT V.
To: LUXWALL, INC.
Reel/Frame 065747/0313 →
Continuity (6)
Provisional Application 63540729 · Sep 27, 2023
Provisional Application 63427657 · Nov 23, 2022
Provisional Application 63427645 · Nov 23, 2022
Provisional Application 63427661 · Nov 23, 2022
Provisional Application 63427670 · Nov 23, 2022
Related Publication 20240167315A1 · May 23, 2024
References Cited (120)
US 3433611A · Saunders et al. · 1969 [cited by applicant]
US 5124185A · Kerr et al. · 1992 [cited by applicant]
US 5657607A · Collins · 1997 [cited by applicant]
US 5664395A · Collins · 1997 [cited by applicant]
US 5935702A · Macquart et al. · 1999 [cited by applicant]
US 6042934A · Guiselin et al. · 2000 [cited by applicant]
US 6322881B1 · Boire et al. · 2001 [cited by applicant]
US 6352749B1 · Aggas · 2002 [cited by applicant]
US 6533632B1 · Dynka · 2003 [cited by applicant]
US 6558494B1 · Wang et al. · 2003 [cited by applicant]
US 6641689B1 · Aggas · 2003 [cited by applicant]
US 6946171B1 · Aggas · 2005 [cited by applicant]
US 7045181B2 · Yoshizawa et al. · 2006 [cited by applicant]
US 7115308B2 · Amari et al. · 2006 [cited by applicant]
US 7314668B2 · Lingle et al. · 2008 [cited by applicant]
US 7342716B2 · Hartig · 2008 [cited by applicant]
US 7407423B2 · Aitken et al. · 2008 [cited by applicant]
US 7425166B2 · Burt et al. · 2008 [cited by applicant]
US 7560402B2 · Thomsen · 2009 [cited by applicant]
US 7632571B2 · Hartig et al. · 2009 [cited by applicant]
US 7858193B2 · Ihlo et al. · 2010 [cited by applicant]
US 7910229B2 · Medwick et al. · 2011 [cited by applicant]
US 7919157B2 · Cooper · 2011 [cited by applicant]
US 8490434B2 · Watanabe et al. · 2013 [cited by applicant]
US 8500933B2 · Cooper · 2013 [cited by applicant]
US 8590343B2 · Wang · 2013 [cited by applicant]
US 8821999B2 · Grzybowski et al. · 2014 [cited by applicant]
US 8833105B2 · Dennis et al. · 2014 [cited by applicant]
US 8951617B2 · Reymond et al. · 2015 [cited by applicant]
US 9169155B2 · Dennis et al. · 2015 [cited by applicant]
US 9215760B2 · Fischer et al. · 2015 [cited by applicant]
US 9290984B2 · Hogan et al. · 2016 [cited by applicant]
US 9388628B2 · Petrmichl et al. · 2016 [cited by applicant]
US 9428952B2 · Dennis et al. · 2016 [cited by applicant]
US 9441416B2 · Veerasamy et al. · 2016 [cited by applicant]
US 9458052B2 · Dennis · 2016 [cited by applicant]
US 9593527B2 · Hogan et al. · 2017 [cited by applicant]
US 9752375B2 · Jones · 2017 [cited by applicant]
US 9776910B2 · Dennis · 2017 [cited by applicant]
US 9822580B2 · Cooper · 2017 [cited by applicant]
US 9908811B2 · Gross et al. · 2018 [cited by applicant]
US 10011525B2 · Logunov et al. · 2018 [cited by applicant]
US 10017417B2 · Dejneka et al. · 2018 [cited by applicant]
US 10087676B2 · Dennis · 2018 [cited by applicant]
US 10107028B2 · Dennis · 2018 [cited by applicant]
US 10125045B2 · Dennis · 2018 [cited by applicant]
US 10153389B2 · Godeke et al. · 2018 [cited by applicant]
US 10267085B2 · Dennis et al. · 2019 [cited by applicant]
US 10280680B2 · Veerasamy et al. · 2019 [cited by applicant]
US 10421684B2 · Hogan et al. · 2019 [cited by applicant]
US 10435938B2 · Dennis et al. · 2019 [cited by applicant]
US 10465433B2 · Hogan et al. · 2019 [cited by applicant]
US 10731403B2 · Krisko et al. · 2020 [cited by applicant]
US 10752535B2 · Dennis · 2020 [cited by applicant]
US 10759693B2 · Xu et al. · 2020 [cited by applicant]
US 10829984B2 · Dennis et al. · 2020 [cited by applicant]
US 10858880B2 · Dennis · 2020 [cited by applicant]
US 10954160B2 · Streltsov et al. · 2021 [cited by applicant]
US 11014847B2 · Dennis · 2021 [cited by applicant]
US 11028009B2 · Dennis · 2021 [cited by applicant]
US 11028637B2 · Abe et al. · 2021 [cited by applicant]
US 11124450B2 · Miki et al. · 2021 [cited by applicant]
US 11285703B2 · Jorgensen et al. · 2022 [cited by applicant]
US 20090155555A1 · Botelho et al. · 2009 [cited by applicant]
US 20120131959A1 · No et al. · 2012 [cited by applicant]
US 20120202049A1 · Valladeau et al. · 2012 [cited by applicant]
US 20130101759A1 · Jones · 2013 [cited by applicant]
US 20150218032A1 · Hogan · 2015 [cited by examiner]
US 20160297706A1 · Naito et al. · 2016 [cited by applicant]
US 20180238104A1 · Mikkelsen et al. · 2018 [cited by applicant]
US 20210254395A1 · Nielsen et al. · 2021 [cited by applicant]
US 20210262279A1 · Hedeby et al. · 2021 [cited by applicant]
US 20210270084A1 · Abe et al. · 2021 [cited by applicant]
US 20220025697A1 · Nielsen · 2022 [cited by applicant]
US 20220074258A1 · Andersen et al. · 2022 [cited by applicant]
US 20220235601A1 · Krisko et al. · 2022 [cited by applicant]
EP 1563952B1 · 2013 [cited by applicant]
EP 3102548 · 2016 [cited by applicant]
WO WO2015119914A1 · 2015 [cited by applicant]
3 [cited by applicant]
European Search Report dated Sep. 12, 2024 for EP Application No. 24187538. [cited by applicant]
PCT International Search Report dated Dec. 22, 2023 for PCT/US2023/078804. [cited by applicant]
PCT Written Opinion dated Dec. 22, 2023 for PCT/US2023/078804. [cited by applicant]
Li et al., “Glass forming region and bonding mechanism of low melting V2O5TeO2Bi2O3 glass applied in vacuum glazing sealing”, Mar. 9, 2021, pp. 1-17, American Ceramic Society. [cited by applicant]
Modeling of Vacuum Insulating Glazing, Published by Ashrae; by Hart et al.; 7pgs. (Dec. 2013). [cited by applicant]
Laser Assisted Frit Sealing for High Thermal Expansion Glasses; [cited by applicant]
Vacuum Insulated Glazing under the Influence of a Thermal Load; 2 pgs; by Aronen et al. (Jul. 2020). [cited by applicant]
Edge Conduction in Vacuum Glazing; Presented at Thermal Performance of the ExteriorBuildings VI, Clearwater Beach, FL, Dec. 4-8, 1995, by Simko et al.; 14pgs (Dec. 1995). [cited by applicant]
U.S. Appl. No. 18/376,897, filed Oct. 5, 2023. [cited by applicant]
U.S. Appl. No. 18/376,473, filed Oct. 4, 2023. [cited by applicant]
U.S. Appl. No. 18/376,900, filed Oct. 5, 2023. [cited by applicant]
U.S. Appl. No. 18/376,907, filed Oct. 5, 2023. [cited by applicant]
U.S. Appl. No. 18/376,479, filed Oct. 4, 2023. [cited by applicant]
U.S. Appl. No. 18/376,483, filed Oct. 4, 2023. [cited by applicant]
U.S. Appl. No. 18/376,490, filed Oct. 4, 2023. [cited by applicant]
U.S. Appl. No. 18/376,495, filed Oct. 4, 2023. [cited by applicant]
U.S. Appl. No. 18/376,926, filed Oct. 5, 2023. [cited by applicant]
U.S. Appl. No. 18/376,914, filed Oct. 5, 2023. [cited by applicant]
U.S. Appl. No. 18/376,503, filed Oct. 4, 2023. [cited by applicant]
U.S. Appl. No. 18/379,275, filed Oct. 12, 2023. [cited by applicant]
U.S. Appl. No. 18/379,285, filed Oct. 12, 2023. [cited by applicant]
U.S. Appl. No. 18/376,932, filed Oct. 5, 2023. [cited by applicant]
U.S. Appl. No. 18/377,328, filed Oct. 6, 2023. [cited by applicant]
U.S. Appl. No. 18/377,335, filed Oct. 6, 2023. [cited by applicant]
U.S. Appl. No. 18/517,044, filed Nov. 22, 2023. [cited by applicant]
U.S. Appl. No. 18/513,944, filed Nov. 20, 2023. [cited by applicant]
U.S. Appl. No. 18/510,777, filed Nov. 16, 2023. [cited by applicant]
U.S. Appl. No. 18/616,420, filed Mar. 26, 2024. [cited by applicant]
U.S. Appl. No. 18/636,472, filed Apr. 16, 2024. [cited by applicant]
U.S. Appl. No. 18/632,364, filed Apr. 11, 2024. [cited by applicant]
U.S. Appl. No. 18/617,736, filed Mar. 27, 2024. [cited by applicant]
U.S. Appl. No. 18/619,266, filed Mar. 28, 2024. [cited by applicant]
U.S. Appl. No. 18/623,109, filed Apr. 1, 2024. [cited by applicant]
U.S. Appl. No. 18/626,359, filed Apr. 4, 2024. [cited by applicant]
U.S. Appl. No. 18/633,733, filed Apr. 12, 2024. [cited by applicant]
U.S. Appl. No. 18/629,996, filed Apr. 9, 2024. [cited by applicant]
U.S. Appl. No. 18/650,204, filed Apr. 30, 2024. [cited by applicant]
U.S. Appl. No. 18/654,040, filed May 3, 2024. [cited by applicant]
U.S. Appl. No. 18/664,462, filed May 15, 2024. [cited by applicant]
U.S. Appl. No. 18/668,374, filed May 20, 2024. [cited by applicant]
Cited By (2)
US 12,612,821 US 12,715,199