SEMICONDUCTOR DEVICE STRUCTURE WITH LINER LAYER HAVING TAPERED SIDEWALL AND METHOD FOR PREPARING THE SAME
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate; a second dielectric layer disposed over the first dielectric layer; a third dielectric layer disposed over the second dielectric layer; a spacer structure disposed in the second dielectric layer; a conductive structure disposed in the third dielectric layer, penetrating through the second dielectric layer, and extending into the first dielectric layer, wherein the conductive structure is surrounded by the spacer structure; a liner layer separating the conductive structure from the first dielectric layer, the second dielectric layer, and the spacer structure, wherein the liner layer has a tapered sidewall in direct contact with the first dielectric layer; an inner silicide portion disposed over the conductive structure; an outer silicide portion surrounding the inner silicide portion and covering the liner layer; and an upper plug disposed over the inner silicide portion and the outer silicide portion.
1 . A semiconductor device structure, comprising:
a first dielectric layer disposed over a semiconductor substrate;
a second dielectric layer disposed over the first dielectric layer;
a third dielectric layer disposed over the second dielectric layer;
a spacer structure disposed in the second dielectric layer;
a conductive structure disposed in the third dielectric layer, penetrating through the second dielectric layer, and extending into the first dielectric layer, wherein the conductive structure is surrounded by the spacer structure;
a liner layer separating the conductive structure from the first dielectric layer, the second dielectric layer, and the spacer structure, wherein the liner layer has a tapered sidewall in direct contact with the first dielectric layer;
an inner silicide portion disposed over the conductive structure;
an outer silicide portion surrounding the inner silicide portion and covering the liner layer; and
an upper plug disposed over the inner silicide portion and the outer silicide portion.
2 . The semiconductor device structure of claim 1 , wherein the spacer structure is in direct contact with a top surface of the first dielectric layer.
3 . The semiconductor device structure of claim 1 , wherein an angle between the tapered sidewall and a bottom surface of the liner layer is greater than 90 degrees.
4 . The semiconductor device structure of claim 1 , wherein the liner layer is in direct contact with the third dielectric layer.
5 . The semiconductor device structure of claim 1 , wherein the conductive structure further comprises:
a barrier layer; and
a metal filling portion disposed over and surrounded by the barrier layer, wherein the metal filling portion comprises copper (Cu).
6 . The semiconductor device structure of claim 5 , wherein a top width of the metal filling portion is greater than a bottom width of the metal filling portion.
7 . The semiconductor device structure of claim 5 , wherein the conductive structure further comprises:
a metal layer disposed between the barrier layer and the metal filling portion, wherein the metal layer comprises copper-manganese (Cu—Mn) alloy.
8 . The semiconductor device structure of claim 1 , wherein the spacer structure further comprises an L-shaped liner.
9 . The semiconductor device structure of claim 8 , wherein the spacer structure further comprises an air gap enclosed by the L-shaped liner and the liner layer.
10 . The semiconductor device structure of claim 1 , wherein a top surface of the outer silicide portion is higher than a top surface of the inner silicide portion.
11 . The semiconductor device structure of claim 6 , wherein a width of the upper plug is greater than the top width of the metal filling portion.
12 . The semiconductor device structure of claim 1 , wherein the outer silicide portion comprises titanium silicide.
13 . The semiconductor device structure of claim 1 , wherein the inner silicide portion comprises copper silicide.
14 . The semiconductor device structure of claim 1 , wherein the upper plug comprises tungsten (W), aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), or a combination thereof.
15 . The semiconductor device structure of claim 8 , wherein the L-shaped liner extends to the third dielectric layer.
16 . The semiconductor device structure of claim 8 , wherein the L-shaped liner extending to the third dielectric layer is in direct contact with the outer silicide portion.
17 . The semiconductor device structure of claim 8 , wherein the L-shaped liner comprises silicon nitride.
18 . The semiconductor device structure of claim 7 , wherein the barrier layer and the metal layer disposed in the third dielectric layer are in direct contact with the outer silicide portion.
19 . The semiconductor device structure of claim 7 , further comprising an air gap disposed in the second dielectric layer and next to the L-shaped liner.
20 . The semiconductor device structure of claim 19 , further comprising a liner disposed in the second dielectric layer and enclosing the air gap.