IP Library Granted Patent US 12,227,661
Granted Patent B2
US 12,227,661 · App. 18/382,630 · Granted Feb 18, 2025

Method for processing metal nanowire ink with metal ions

Inventors: Ying-Syi Li (Fremont, CA); Xiqiang Yang (Hayward, CA); Yu Kambe (Berkeley, CA); Xiaofeng Chen (San Jose, CA); Hua Gu (Dublin, CA); Steven Michael Lam (San Jose, CA); Melanie Maniko Inouye (Fremont, CA); Arthur Yung-Chi Cheng (Newark, CA); Alex Da Zhang Tan (Singapore, SG); Christopher S. Scully (Campbell, CA); Ajay Virkar (San Mateo, CA)
Assignee: EKC Technology, Inc.
C09D11/52B05D1/005B05D1/02B05D1/18B05D1/265B05D1/28B05D3/0254B05D5/06C09D11/08C09D11/10C09D11/102C09D11/106C09D11/14C09D101/02C09D139/06C23C30/00G06F3/0445H01B1/02H01B1/22H01B13/30H05K1/0274H05K1/097G06F3/044G06F3/045G06F2203/04103H05K2201/0108H05K2201/026H05K2201/10128H05K2201/10151
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Quick Facts
Patent No.
US 12,227,661
App. No.
18/382,630
Granted
Feb 18, 2025
Kind
B2
Abstract

Methods for processing deposited metal nanowire inks with metal ions are used to form fused metal nanostructured networks. The metal nanowire inks include a hydrophilic polymer binder, such as a cellulose based binder. The metal nanowire inks can be deposited onto a substrate surface and dried to drive the fusing process. Transparent conductive films can be formed with desirable properties.

Claims (17)

1. A method for processing a deposited metal nanowire ink with metal ions, the method comprising:

drying the deposited metal nanowire ink at a temperature from about 60° C. to about 99° C. at a relative humidity of at least about 40% for at least about 1 minute, wherein an electrically conductive film is formed comprising a fused metal nanostructured network, and wherein the deposited metal nanowire ink comprises a metal nanowire ink comprising from about 0.001 wt % to about 4 wt % metal nanowires, from about 0.05 wt % to about 5 wt % hydrophilic polymer binder, and from about 0.00025 wt % to about 0.5 wt % metal ions.

2. The method of claim 1 wherein the metal nanowires comprise silver nanowires and the metal ions comprise silver ions, and wherein the deposited metal nanowire ink covers all or a portion of a substrate surface at a metal loading at covered locations from about 0.1 mg/m 2 to about 300 mg/m 2 .

3. The method of claim 1 wherein the metal nanowire ink comprises from about 5 wt % to about 60 wt % liquid alcohol.

4. The method of claim 1 wherein the metal nanowire ink comprises fluoride anions.

5. The method of claim 4 wherein the metal ions and the fluoride anions are provided as silver fluoride.

6. The method of claim 4 wherein the metal nanowire ink comprises from about 0.0001 to about 0.1 wt % fluoride anions.

7. The method of claim 1 wherein a pH of the metal nanowire ink is at least about 3 pH units.

8. The method of claim 1 wherein a pH of the metal nanowire ink is from about 5.5 to about 7.5 pH units.

9. The method of claim 1 wherein the hydrophilic polymer binder comprises a cellulose based polymer or chitosan based polymer.

10. The method of claim 1 wherein the hydrophilic polymer binder comprises a polysaccharide.

11. The method of claim 1 wherein the drying is performed at a relative humidity of no more than about 70% and at a temperature from about 65° C. to about 90° C.

12. The method of claim 1 wherein the metal nanowires comprise silver nanowires and the electrically conductive film has a sheet resistance of no more than about 140 ohms/sq, a % TT of at least about 95% and a haze of no more than about 1.2%.

13. The method of claim 1 wherein the metal nanowire ink comprises from about 0.01 wt % to about 2.5 wt % curable binder.

14. The method of claim 13 wherein the method further comprises curing the curable binder.

15. The method of claim 1 wherein the method further comprises applying a polymer overcoat on the electrically conductive film.

16. A processed metal nanowire film comprising the electrically conductive film of claim 1 .

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2024
From: C3 NANO, INC.
To: EKC TECHNOLOGY, INC.
Reel/Frame 069719/0206 →
RELEASE OF SECURITY INTEREST Recorded Oct 11, 2024
From: GALLAGHER IP SOLUTIONS LLC
To: C3 NANO, INC.
Reel/Frame 068877/0619 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 23, 2023
From: LI, YING-SYI; YANG, XIQIANG; KAMBE, YU; CHEN, XIAOFENG; GU, HUA; LAM, STEVEN MICHAEL; INOUYE, MELANIE MARIKO; CHENG, ARTHUR YUNG-CHI; TAN, ALEX DA ZHANG; SCULLY, CHRISTOPHER S.; VIRKAR, AJAY
To: C3 NANO, INC.
Reel/Frame 065316/0600 →
Continuity (8)
Continuation 17988885 · Nov 17, 2022
Continuation 16952372 · Nov 19, 2020
Continuation 16127462 · Sep 11, 2018
Continuation 15247533 · Aug 25, 2016
Continuation 14848697 · Sep 9, 2015
Continuation 14464332 · Aug 20, 2014
Continuation 14448504 · Jul 31, 2014
Related Publication 20240043711A1 · Feb 8, 2024
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