Method for manufacturing solar cell

1. A method for manufacturing a solar cell, comprising:

providing a wafer, wherein:

the wafer includes a substrate and a doped conducting layer;

the substrate includes a first surface, a second surface, and first side surfaces, the first and second surfaces are opposite to each other, the first side surfaces are adjacent to and between the first surface and the second surface;

at least the first surface and a portion of at least one of the first side surfaces of the substrate comprise a textured structure;

the doped conducting layer is disposed at least on the first surface and the portion of the at least one of the first side surfaces, thereby covering the textured structure,

forming a passivating contact layer on the second surface of the substrate,

forming a first passivation layer on the doped conducting layer, wherein the first passivation layer covers the first surface and at least the portion of the at least one of the first side surfaces, thereby covering at least the doped conducting layer, and

forming a second passivation layer on the passivating contact layer, thereby forming a solar cell matrix, wherein the second passivation layer covers the second surface, thereby covering the passivating contact layer.

2. The method according to claim 1 , wherein after forming the second passivation layer on the passivating contact layer, the method further comprises:

laser cutting the solar cell matrix along the thickness direction to form at least two solar cells.

3. The method according to claim 1 , wherein providing the wafer includes:

performing texturing treatment and diffusion of dopant elements to at least the first surface and the first side surfaces of the substrate; and

etching the substrate to expose the second surface and a first target region of each first side surface of the substrate,

wherein the first target regions are adjacent to and connected to the second surface.

4. The method according to claim 1 , wherein providing the wafer includes:

cutting a substrate blank along the thickness direction to form the substrate and a cut edge side surface of the substrate;

performing texturing treatment and diffusion of dopant elements to at least the first surface, the first side surfaces, and the cut edge side surface of the substrate; and

etching the substrate to expose the second surface, a first target region of each first side surface, and a second target region of the cut edge side surface of the substrate, thereby forming the textured structure and the doped conducting layer covering the textured structure on the first surface, the portion of the at least one of the first side surfaces, and a portion of the cut edge side surface of the substrate;

wherein the first target region is adjacent to the second surface, and the second target region is adjacent to the second surface.

5. The method according to claim 4 , wherein etching the substrate to expose the second surface, the first target region of each first side surface, and the second target region of the cut edge side surface of the substrate includes:

etching the substrate subjected to the texturing treatment and diffusion of dopant elements, so as to expose the textured structure in the second surface, the first target region of each first side surface, and the second target region of the cut edge side surface;

etching to remove the exposed textured structure in the second surface, the first target region, and the second target region, so as to expose the second surface, the first target region of each first side surface, and the second target region of the cut edge side surface of the substrate.

6. The method according to claim 4 , wherein cutting the substrate blank along the thickness direction to form the substrate includes laser cutting the substrate blank along the thickness direction to form the substrate.

7. The method according to claim 6 , wherein the substrate blank is divided into two substrates by the laser cutting.

8. The method according to claim 1 , wherein forming the passivating contact layer on the second surface of the substrate includes:

sequentially forming a tunnel material layer, a doped polysilicon material layer, and an oxide material layer on a first wafer surface, a second wafer surface and side wafer surfaces;

etching to remove the oxide material layers on the first wafer surface and each of the side wafer surfaces; and

etching to remove the doped polysilicon material layer and the tunnel material layer on the first wafer surface and on each of the side wafer surfaces;

wherein the first wafer surface corresponds to the first surface of the substrate.

9. The method according to claim 1 , wherein forming the passivating contact layer on the second surface of the substrate includes:

forming a passivating contact material layer on a first wafer surface, a second wafer surface and side wafer surfaces of the wafer;

cutting the wafer formed with the passivating contact material layer along the thickness direction of the substrate to form a cut edge side surface of the substrate; and

etching to remove the passivating contact material layer disposed outside the second surface of the substrate, thereby forming the passivating contact layer.

10. The method according to claim 1 , wherein after forming the second passivation layer on the passivating contact layer, the method further comprises:

respectively forming electrodes on the first passivation layer and the second passivation layer.

11. The method according to claim 10 , wherein the electrodes are formed such that one electrodes is located at the first surface of the substrate, penetrates the first passivation layer, and is electrically connected to the doped conducting layer, and another electrodes is located at the second surface of the substrate, penetrates the second passivation layer, and is electrically connected to the passivating contact layer.