IP Library › Granted Patent US 12,468,074
Granted Patent B2
US 12,468,074 · App. 18/389,925 · Granted Nov 11, 2025

Plasmonic borophene nanoribbon metal-insulator-metal structure for quantum imaging

Inventors: Yukihiro Tadokoro (Ann Arbor, MI); Ziqi Yu (Ann Arbor, MI)
Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
G02B5/008B82Y20/00G02F1/0018G02F1/19G06N10/40G02F2202/30G02F2202/36
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Quick Facts
Patent No.
US 12,468,074
App. No.
18/389,925
Granted
Nov 11, 2025
Kind
B2
Abstract

Systems and methods described herein relate to implementing quantum imaging. In one embodiment, method includes forming a first substrate that is optically transparent and electrically conductive; forming a second substrate, residing on the first substrate, that is optically transparent and electrically insulative; forming a first borophene nanoribbon array electrically coupled to a first electrode, both residing on the second substrate; forming a third substrate, residing in the second substrate, that is optically transparent and electrically insulative; and forming a second borophene nanoribbon array electrically coupled to a second electrode, both residing on the third substrate.

Claims (33)

1 . A nanophotonic device, comprising

a first substrate that is optically transparent and electrically conductive;

a second substrate, residing on the first substrate, that is optically transparent and electrically insulative;

a first borophene nanoribbon array electrically coupled to a first electrode, both residing on the second substrate;

a third substrate, residing on the second substrate, that is optically transparent and electrically insulative; and

a second borophene nanoribbon array electrically coupled to a second electrode, both residing on the third substrate.

2 . The nanophotonic device of claim 1 , wherein the first borophene nanoribbon array and the second borophene nanoribbon array are structured to cause plasmonically-induced transparency if a first bias voltage is applied to the first electrode and a second bias voltage is applied to the second electrode.

3 . The nanophotonic device of claim 2 , wherein the plasmonically-induced transparency occurs at 670 nm.

4 . The nanophotonic device of claim 2 , wherein the plasmonically-induced transparency occurs below 1500 nm.

5 . The nanophotonic device of claim 1 , wherein the first substrate is composed of an indium tin oxide layer.

6 . The nanophotonic device of claim 5 , wherein the second substrate is composed of a silicon dioxide layer.

7 . The nanophotonic device of claim 6 , wherein the third substrate is composed of a calcium fluoride layer.

8 . The nanophotonic device of claim 1 , wherein the first substrate is deposited on a diamond substrate.

9 . The nanophotonic device of claim 1 , wherein the first substrate is optically coupled to a diamond substrate.

10 . The nanophotonic device of claim 1 , further comprising:

a single pixel detector optically coupled to the third substrate.

11 . A method for constructing a nanophotonic device comprising:

forming a first substrate that is optically transparent and electrically conductive;

forming a second substrate, residing on the first substrate, that is optically transparent and electrically insulative;

forming a first borophene nanoribbon array electrically coupled to a first electrode, both residing on the second substrate;

forming a third substrate, residing on the second substrate, that is optically transparent and electrically insulative; and

forming a second borophene nanoribbon array electrically coupled to a second electrode, both residing on the third substrate.

12 . The method of claim 11 , wherein the forming of the first borophene nanoribbon array and the forming of the second borophene nanoribbon array further includes structuring the first borophene nanoribbon array and the second borophene nanoribbon array to cause plasmonically-induced transparency if a first bias voltage is applied to the first electrode and a second bias voltage is applied to the second electrode.

13 . The method of claim 12 , wherein the plasmonically-induced transparency occurs at 670 nm.

14 . The method of claim 12 , wherein the plasmonically-induced transparency occurs below 1500 nm.

15 . The method of claim 11 , wherein the first substrate is composed of an indium tin oxide layer.

16 . The method of claim 15 , wherein the second substrate is composed of a silicon dioxide layer.

17 . The method of claim 16 , wherein the third substrate is composed of a calcium fluoride layer.

18 . The method of claim 11 , wherein the first substrate is deposited on a diamond substrate.

19 . The method of claim 11 , further comprising:

forming an optical coupling between the first substrate and a diamond substrate.

20 . The method of claim 11 , further comprising:

forming an optical coupling between the third substrate and a single pixel detector.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 2, 2026
From: TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AMERICA, INC.
To: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
Reel/Frame 073352/0339 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 26, 2023
From: TADOKORO, YUKIHIRO; YU, ZIQI
To: TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AMERICA, INC.
Reel/Frame 065954/0697 →
Continuity (1)
Related Publication 20250208323A1 · Jun 26, 2025
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