IP Library Granted Patent US 12,623,813
Granted Patent B2
US 12,623,813 · App. 18/390,669 · Granted May 12, 2026

Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus

Inventors: John T. Felts (Alameda, CA); Thomas E. Fisk (Green Valley, AZ); Robert S. Abrams (Albany, NY); John Ferguson (Auburn, AL); Jonathan R. Freedman (Auburn, AL); Robert J. Pangborn (Harbor Springs, MI); Peter J. Sagona (Pottstown, PA); Christopher Weikart (Auburn, AL)
Assignee: SIO2 MEDICAL PRODUCTS, LLC
B65D25/14A61M5/3129B65D25/04C23C16/045C23C16/30C23C16/36C23C16/401C23C16/507A61J1/05A61M2005/3109A61M2005/3131
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,623,813
App. No.
18/390,669
Granted
May 12, 2026
Kind
B2
Abstract

A method for providing a passivation layer or pH protective coating on a substrate surface by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising polymerizing gases. The lubricity, passivation, pH protective, hydrophobicity, and/or barrier properties of the passivation layer or pH protective coating are set by setting the ratio of the O 2 to the organosilicon precursor in the precursor feed, and/or by setting the electric power used for generating the plasma. In particular, a passivation layer or pH protective coating made by the method is provided. Pharmaceutical packages coated by the method and the use of such packages protecting composition contained in the vessel against mechanical and/or chemical effects of the surface of the package without a passivation layer or pH protective coating material are also provided.

Claims (152)

1 . An article comprising:

a wall having a surface;

a barrier coating or layer of SiOx, wherein x is from 1.5 to 2.9, from 2 to 1000 nm thick, the barrier coating or layer of SiOx having an outer surface facing the wall surface, the barrier coating or layer being effective to reduce the ingress of atmospheric gas through the wall compared to an uncoated wall; and

a pH protective coating of SiOxCy wherein x is from about 0.5 to about 2.4 and y is from about 0.6 to about 3, on the barrier coating or layer, the pH protective coating being formed by chemical vapor deposition of a precursor selected from a a linear siloxane, a monocyclic siloxane, a polycyclic siloxane, a polysilsesquioxane, a silatrane, a silquasilatrane, a silproatrane, or a combination of any two or more of these precursors;

in which an FTIR absorbance spectrum of the pH protective coating has a ratio greater than 0.75 between:

the maximum amplitude of the Si—O—Si symmetrical stretch peak between about 1000 and 1040 cm −1 , and

the maximum amplitude of the Si—O—Si asymmetric stretch peak between about 1060 and about 1100 cm −1 ; and

in which the rate of erosion of the pH protective coating, if directly contacted by a fluid composition having a pH of 8, is less than 20% of the rate of erosion of the barrier coating or layer, if directly contacted by the fluid composition under the same conditions.

2 . The article of claim 1 , in which at least a portion of the wall comprises or consists essentially of a polyolefin, a cyclic olefin polymer, a cyclic olefin copolymer, a polyester, and polycarbonate, or polylactic acid.

3 . The article of claim 1 , wherein the barrier coating is from 4 nm to 500 nm thick.

4 . The article of claim 1 , in which the pH protective coating is between 10 and 1000 nm thick.

5 . The article of claim 1 , in which the pH protective coating is coextensive with the barrier coating or layer.

6 . The article of claim 1 , in which the calculated shelf life (total Si/Si dissolution rate) is more than 1 year.

7 . The article of claim 1 , wherein the pH protective coating is applied by PECVD of a precursor feed comprising a linear siloxane, a monocyclic siloxane, a polycyclic siloxane, or any combination of two or more of these precursors.

8 . The article of claim 7 , in which the precursor feed further comprises oxygen.

9 . The article of claim 1 , in which the fluid composition removes the pH protective coating at a rate of 1 nm or less of pH protective coating thickness per 44 hours of contact.

10 . The article of claim 9 , in which the fluid composition removes the pH protective coating at a rate of 1 nm or less of pH protective coating thickness per 88 hours of contact.

11 . The article of claim 1 , wherein the pH protective layer shows an O-Parameter measured with attenuated total reflection (ATR) of less than 0.4, measured as:

O

-

Parameter

=

Intensity

at

1253

cm

-

1

Maximum

intensity

in

the

range

1000

to

1100

cm

-

1

.

12 . The article of claim 11 , wherein the pH protective layer shows an N-Parameter measured with attenuated total reflection (ATR) of less than 0.7, measured as:

N

-

Parameter

=

Intensity

at

840

cm

-

1

Intensity

at

799

cm

-

1

.

13 . An article comprising:

a wall having a surface;

a barrier coating or layer of SiOx, wherein x is from 1.5 to 2.9, from 2 to 1000 nm thick, the barrier coating or layer of SiOx having an outer surface facing the wall surface, the barrier coating or layer being effective to reduce the ingress of atmospheric gas through the wall compared to an uncoated wall; and

a pH protective coating of SiOxCy wherein x is from about 0.5 to about 2.4 and y is from about 0.6 to about 3, on the barrier coating or layer, the pH protective coating being formed by chemical vapor deposition of a precursor selected from a a linear siloxane, a monocyclic siloxane, a polycyclic siloxane, a polysilsesquioxane, a silatrane, a silquasilatrane, a silproatrane, or a combination of any two or more of these precursors;

in which the rate of erosion of the passivation layer or pH protective coating, if directly contacted by a fluid composition having a pH at some point between 5 and 9, is less than the rate of erosion of the barrier coating or layer, if directly contacted by the fluid composition; and

in which an FTIR absorbance spectrum of the pH protective coating has a ratio greater than 0.75 between:

the maximum amplitude of the Si—O—Si symmetrical stretch peak between about 1000 and 1040 cm −1 , and

the maximum amplitude of the Si—O—Si asymmetric stretch peak between about 1060 and about 1100 cm −1 .

14 . The article of claim 13 , in which an FTIR absorbance spectrum of the pH protective coating has a ratio of at least 0.9 between:

the maximum amplitude of the Si—O—Si symmetrical stretch peak between about 1000 and 1040 cm −1 , and

the maximum amplitude of the Si—O—Si asymmetric stretch peak between about 1060 and about 1100 cm −1 .

15 . The article of claim 13 , wherein the rate of erosion of the pH protective coating, if directly contacted by the fluid composition having a pH of 8, is less than 20% of the rate of erosion of the barrier coating or layer, if directly contacted by the fluid composition under the same conditions.

16 . The article of claim 13 , in which the pH protective coating is coextensive with the barrier coating or layer.

17 . The article of claim 13 , in which the fluid composition removes the pH protective coating at a rate of 1 nm or less of pH protective coating thickness per 44 hours of contact.

18 . The article of claim 17 , in which the fluid composition removes the pH protective coating at a rate of 1 nm or less of pH protective coating thickness per 88 hours of contact.

19 . The article of claim 13 , wherein the pH protective layer shows an O-Parameter measured with attenuated total reflection (ATR) of less than 0.4, measured as:

O

-

Parameter

=

Intensity

at

1253

cm

-

1

Maximum

intensity

in

the

range

1000

to

1100

cm

-

1

.

20 . The article of claim 19 , wherein the pH protective layer shows an N-Parameter measured with attenuated total reflection (ATR) of less than 0.7, measured as:

N

-

Parameter

=

Intensity

at

840

cm

-

1

Intensity

at

799

cm

-

1

.

Assignments (1)
CHANGE OF NAME Recorded Sep 4, 2024
From: SIO2 MEDICAL PRODUCTS, INC.
To: SIO2 MEDICAL PRODUCTS, LLC
Reel/Frame 068839/0691 →
Continuity (9)
Continuation 17988450 · Nov 16, 2022
Continuation 17484944 · Sep 24, 2021
Continuation 16806589 · Mar 2, 2020
Continuation 16226463 · Dec 19, 2018
Division 14357418
Provisional Application 61645003 · May 9, 2012
Provisional Application 61636377 · Apr 20, 2012
Provisional Application 61558885 · Nov 11, 2011
Related Publication 20240417138A1 · Dec 19, 2024
References Cited (400)
US 3274267A · Chow · 1966 [cited by applicant]
US 3297465A · Connell · 1967 [cited by applicant]
US 3355947A · Karlby · 1967 [cited by applicant]
US 3442686A · Jones · 1969 [cited by applicant]
US 3448614A · Muger · 1969 [cited by applicant]
US 3590634A · Pasternak · 1971 [cited by applicant]
US 3838598A · Tomkins · 1974 [cited by applicant]
US 3957653A · Blecher · 1976 [cited by applicant]
US 4111326A · Percarpio · 1978 [cited by applicant]
US 4134832A · Heimreid · 1979 [cited by applicant]
US 4136794A · Percapio · 1979 [cited by applicant]
US 4162528A · Maldonado · 1979 [cited by applicant]
US 4168330A · Kaganowicz · 1979 [cited by applicant]
US 4186840A · Percarpio · 1980 [cited by applicant]
US 4187952A · Percarpio · 1980 [cited by applicant]
US 4226333A · Percarpio · 1980 [cited by applicant]
US 4289726A · Potoczky · 1981 [cited by applicant]
US 4290534A · Percarpio · 1981 [cited by applicant]
US 4293078A · Percarpio · 1981 [cited by applicant]
US 4338764A · Percarpio · 1982 [cited by applicant]
US 4391128A · McWorter · 1983 [cited by applicant]
US 4392218A · Plunkett, Jr. · 1983 [cited by applicant]
US 4422896A · Class · 1983 [cited by applicant]
US 4452679A · Dunn · 1984 [cited by applicant]
US 4478873A · Masso · 1984 [cited by applicant]
US 4481229A · Suzuki · 1984 [cited by applicant]
US 4483737A · Mantei · 1984 [cited by applicant]
US 4484479A · Eckhardt · 1984 [cited by applicant]
US 4486378A · Hirata · 1984 [cited by applicant]
US 4522510A · Rosencwaig · 1985 [cited by applicant]
US 4524089A · Haque · 1985 [cited by applicant]
US 4524616A · Drexel · 1985 [cited by applicant]
US 4552791A · Hahn · 1985 [cited by applicant]
US 4576204A · Smallborn · 1986 [cited by applicant]
US 4609428A · Fujimura · 1986 [cited by applicant]
US 4610770A · Saito · 1986 [cited by applicant]
US 4648107A · Latter · 1987 [cited by applicant]
US 4648281A · Morita · 1987 [cited by applicant]
US 4652429A · Konrad · 1987 [cited by applicant]
US 4664279A · Obrist · 1987 [cited by applicant]
US 4667620A · White · 1987 [cited by applicant]
US 4668365A · Foster · 1987 [cited by applicant]
US 4683838A · Kimura · 1987 [cited by applicant]
US 4697717A · Grippi · 1987 [cited by applicant]
US 4703187A · Hofling · 1987 [cited by applicant]
US 4716491A · Ohno · 1987 [cited by applicant]
US 4721553A · Saito · 1988 [cited by applicant]
US 4725481A · Ostapchenko · 1988 [cited by applicant]
US 4741446A · Miller · 1988 [cited by applicant]
US 4756964A · Kincaid · 1988 [cited by applicant]
US 4767414A · Williams · 1988 [cited by applicant]
US 4778721A · Sliemers · 1988 [cited by applicant]
US 4799246A · Fischer · 1989 [cited by applicant]
US 4808453A · Romberg · 1989 [cited by applicant]
US 4809876A · Tomaswick · 1989 [cited by applicant]
US 4824444A · Nomura · 1989 [cited by applicant]
US 4841776A · Kawachi · 1989 [cited by applicant]
US 4842704A · Collins · 1989 [cited by applicant]
US 4844986A · Karakelle · 1989 [cited by applicant]
US 4846101A · Montgomery · 1989 [cited by applicant]
US 4853102A · Tateishi · 1989 [cited by applicant]
US 4869203A · Pinkhasov · 1989 [cited by applicant]
US 4872758A · Miyazaki · 1989 [cited by applicant]
US 4874497A · Matsuoka · 1989 [cited by applicant]
US 4880675A · Mehta · 1989 [cited by applicant]
US 4883686A · Doehler · 1989 [cited by applicant]
US 4886086A · Etchells · 1989 [cited by applicant]
US 4894256A · Gartner · 1990 [cited by applicant]
US 4894510A · Nakanishi · 1990 [cited by applicant]
US 4897285A · Wilhelm · 1990 [cited by applicant]
US 4926791A · Hirose · 1990 [cited by applicant]
US 4948628A · Montgomery · 1990 [cited by applicant]
US 4973504A · Romberg · 1990 [cited by applicant]
US 4991104A · Miller · 1991 [cited by applicant]
US 4999014A · Gold · 1991 [cited by applicant]
US 5000994A · Romberg · 1991 [cited by applicant]
US 5016564A · Nakamura · 1991 [cited by applicant]
US 5021114A · Saito · 1991 [cited by applicant]
US 5028566A · Lagendijk · 1991 [cited by applicant]
US 5030475A · Ackermann · 1991 [cited by applicant]
US 5032202A · Tsai · 1991 [cited by applicant]
US 5039548A · Hirose · 1991 [cited by applicant]
US 5041303A · Wertheimer · 1991 [cited by applicant]
US 5042951A · Gold · 1991 [cited by applicant]
US 5044199A · Drexel · 1991 [cited by applicant]
US 5064083A · Alexander · 1991 [cited by applicant]
US 5067491A · Taylor · 1991 [cited by applicant]
US 5079481A · Moslehi · 1992 [cited by applicant]
US 5082542A · Moslehi · 1992 [cited by applicant]
US 5084356A · Deak · 1992 [cited by applicant]
US 5085904A · Deak · 1992 [cited by applicant]
US 5099881A · Nakajima · 1992 [cited by applicant]
US 5113790A · Geisler · 1992 [cited by applicant]
US 5120966A · Kondo · 1992 [cited by applicant]
US 5131752A · Yu · 1992 [cited by applicant]
US 5144196A · Gegenwart · 1992 [cited by applicant]
US 5147678A · Foerch · 1992 [cited by applicant]
US 5154943A · Etzkorn · 1992 [cited by applicant]
US 5189446A · Barnes · 1993 [cited by applicant]
US 5192849A · Moslehi · 1993 [cited by applicant]
US 5198725A · Chen · 1993 [cited by applicant]
US 5203959A · Hirose · 1993 [cited by applicant]
US 5204141A · Roberts · 1993 [cited by applicant]
US 5209882A · Hattori · 1993 [cited by applicant]
US 5216329A · Pelleteir · 1993 [cited by applicant]
US 5224441A · Felts · 1993 [cited by applicant]
US 5225024A · Hanley · 1993 [cited by applicant]
US 5232111A · Burns · 1993 [cited by applicant]
US 5252178A · Moslehi · 1993 [cited by applicant]
US 5260095A · Affinito · 1993 [cited by applicant]
US 5266398A · Hioki · 1993 [cited by applicant]
US 5271274A · Khuri-Yakub · 1993 [cited by applicant]
US 5272417A · Ohmi · 1993 [cited by applicant]
US 5272735A · Bryan · 1993 [cited by applicant]
US 5275299A · Konrad · 1994 [cited by applicant]
US 5286297A · Moslehi · 1994 [cited by applicant]
US 5292370A · Tsai · 1994 [cited by applicant]
US 5294011A · Konrad · 1994 [cited by applicant]
US 5294464A · Geisler · 1994 [cited by applicant]
US 5297561A · Hulon · 1994 [cited by applicant]
US 5298587A · Hu · 1994 [cited by applicant]
US 5300901A · Krummel · 1994 [cited by applicant]
US 5302266A · Grabarz · 1994 [cited by applicant]
US 5308649A · Babacz · 1994 [cited by applicant]
US 5314561A · Komiya · 1994 [cited by applicant]
US 5320875A · Hu · 1994 [cited by applicant]
US 5321634A · Obata · 1994 [cited by applicant]
US 5330578A · Sakama · 1994 [cited by applicant]
US 5333049A · Ledger · 1994 [cited by applicant]
US 5338579A · Ogawa et al. · 1994 [cited by applicant]
US 5346579A · Cook · 1994 [cited by applicant]
US 5354286A · Mesa · 1994 [cited by applicant]
US 5356029A · Hogan · 1994 [cited by applicant]
US 5361921A · Burns · 1994 [cited by applicant]
US 5364665A · Felts · 1994 [cited by applicant]
US 5364666A · Williams · 1994 [cited by applicant]
US 5372851A · Ogawa et al. · 1994 [cited by applicant]
US 5374314A · Babacz · 1994 [cited by applicant]
US 5378510A · Thomas · 1995 [cited by applicant]
US 5381228A · Brace · 1995 [cited by applicant]
US 5395644A · Affinito · 1995 [cited by applicant]
US 5396080A · Hannotiau · 1995 [cited by applicant]
US 5397956A · Araki · 1995 [cited by applicant]
US 5409782A · Murayama · 1995 [cited by applicant]
US 5413813A · Cruse · 1995 [cited by applicant]
US 5423915A · Murata · 1995 [cited by applicant]
US 5429070A · Campbell · 1995 [cited by applicant]
US 5433786A · Hu · 1995 [cited by applicant]
US 5434008A · Felts · 1995 [cited by applicant]
US 5439736A · Nomura · 1995 [cited by applicant]
US 5440446A · Shaw · 1995 [cited by applicant]
US 5443645A · Otoshi · 1995 [cited by applicant]
US 5444207A · Sekine · 1995 [cited by applicant]
US 5449432A · Hanawa · 1995 [cited by applicant]
US 5452082A · Sanger · 1995 [cited by applicant]
US 5468520A · Williams · 1995 [cited by applicant]
US 5470388A · Goedicke · 1995 [cited by applicant]
US 5472660A · Fortin · 1995 [cited by applicant]
US 5485091A · Verkuil · 1996 [cited by applicant]
US 5486701A · Norton · 1996 [cited by applicant]
US 5494170A · Burns · 1996 [cited by applicant]
US 5494712A · Hu · 1996 [cited by applicant]
US 5495958A · Konrad · 1996 [cited by applicant]
US 5508075A · Roulin · 1996 [cited by applicant]
US 5510155A · Williams · 1996 [cited by applicant]
US 5513515A · Mayer · 1996 [cited by applicant]
US 5514276A · Babock · 1996 [cited by applicant]
US 5521351A · Mahoney · 1996 [cited by applicant]
US 5522518A · Konrad · 1996 [cited by applicant]
US 5531060A · Fayet · 1996 [cited by applicant]
US 5531683A · Kriesel · 1996 [cited by applicant]
US 5536253A · Haber · 1996 [cited by applicant]
US 5543919A · Mumola · 1996 [cited by applicant]
US 5545375A · Tropsha · 1996 [cited by applicant]
US 5547508A · Affinito · 1996 [cited by applicant]
US 5547723A · Williams · 1996 [cited by applicant]
US 5554223A · Imahashi · 1996 [cited by applicant]
US 5555471A · Xu · 1996 [cited by applicant]
US 5565248A · Piester · 1996 [cited by applicant]
US 5569810A · Tsuji · 1996 [cited by applicant]
US 5571366A · Ishii · 1996 [cited by applicant]
US 5578103A · Araujo · 1996 [cited by applicant]
US 5591898A · Mayer · 1997 [cited by applicant]
US 5593550A · Stewart · 1997 [cited by applicant]
US 5597456A · Maruyama · 1997 [cited by applicant]
US 5616369A · Williams · 1997 [cited by applicant]
US 5620523A · Maeda · 1997 [cited by applicant]
US 5632396A · Burns · 1997 [cited by applicant]
US 5633711A · Nelson · 1997 [cited by applicant]
US 5643638A · Otto · 1997 [cited by applicant]
US 5652030A · Delperier · 1997 [cited by applicant]
US 5654054A · Tropsha · 1997 [cited by applicant]
US 5656141A · Betz · 1997 [cited by applicant]
US 5658438A · Givens · 1997 [cited by applicant]
US 5665280A · Tropsha · 1997 [cited by applicant]
US 5667840A · Tingey · 1997 [cited by applicant]
US 5674321A · Pu · 1997 [cited by applicant]
US 5677010A · Esser · 1997 [cited by applicant]
US 5679412A · Kuehnle · 1997 [cited by applicant]
US 5679413A · Petrmichl · 1997 [cited by applicant]
US 5683771A · Tropsha · 1997 [cited by applicant]
US 5686157A · Harvey · 1997 [cited by applicant]
US 5690745A · Grunwald · 1997 [cited by applicant]
US 5691007A · Montgomery · 1997 [cited by applicant]
US 5693196A · Stewart · 1997 [cited by applicant]
US 5699923A · Burns · 1997 [cited by applicant]
US 5702770A · Martin · 1997 [cited by applicant]
US 5704983A · Thomas et al. · 1998 [cited by applicant]
US 5716683A · Harvey · 1998 [cited by applicant]
US 5718967A · Hu · 1998 [cited by applicant]
US 5725909A · Shaw · 1998 [cited by applicant]
US 5733405A · Taki · 1998 [cited by applicant]
US 5736207A · Walther · 1998 [cited by applicant]
US 5737179A · Shaw · 1998 [cited by applicant]
US 5738233A · Burns · 1998 [cited by applicant]
US 5738920A · Knors · 1998 [cited by applicant]
US 5744360A · Hu · 1998 [cited by applicant]
US 5750892A · Huang · 1998 [cited by applicant]
US 5763033A · Tropsha · 1998 [cited by applicant]
US 5766362A · Montgomery · 1998 [cited by applicant]
US 5769273A · Sasaki · 1998 [cited by applicant]
US 5779074A · Burns · 1998 [cited by applicant]
US 5779716A · Cano · 1998 [cited by applicant]
US 5779802A · Borghs · 1998 [cited by applicant]
US 5779849A · Blalock · 1998 [cited by applicant]
US 5788670A · Reinhard · 1998 [cited by applicant]
US 5792940A · Ghandhi · 1998 [cited by applicant]
US 5798027A · Lefebvre · 1998 [cited by applicant]
US 5800880A · Laurent · 1998 [cited by applicant]
US 5807343A · Tucker · 1998 [cited by applicant]
US 5807605A · Tingey · 1998 [cited by applicant]
US 5812261A · Nelson · 1998 [cited by applicant]
US 5814257A · Kawata · 1998 [cited by applicant]
US 5814738A · Pinkerton · 1998 [cited by applicant]
US 5820603A · Tucker · 1998 [cited by applicant]
US 5823373A · Sudo · 1998 [cited by applicant]
US 5824198A · Williams · 1998 [cited by applicant]
US 5824607A · Trow · 1998 [cited by applicant]
US 5833752A · Martin · 1998 [cited by applicant]
US 5837888A · Mayer · 1998 [cited by applicant]
US 5837903A · Weingand · 1998 [cited by applicant]
US 5840167A · Kim · 1998 [cited by applicant]
US 5849368A · Hostettler · 1998 [cited by applicant]
US 5853833A · Sudo · 1998 [cited by applicant]
US 5855686A · Rust · 1999 [cited by applicant]
US 5861546A · Sagi · 1999 [cited by applicant]
US 5871700A · Konrad · 1999 [cited by applicant]
US 5877895A · Shaw · 1999 [cited by applicant]
US 5880034A · Keller · 1999 [cited by applicant]
US 5888414A · Collins · 1999 [cited by applicant]
US 5888591A · Gleason · 1999 [cited by applicant]
US 5897508A · Konrad · 1999 [cited by applicant]
US 5900284A · Hu · 1999 [cited by applicant]
US 5900285A · Walther · 1999 [cited by applicant]
US 5902461A · Xu · 1999 [cited by applicant]
US 5904952A · Lopata · 1999 [cited by applicant]
US 5913140A · Roche · 1999 [cited by applicant]
US 5914189A · Hasz · 1999 [cited by applicant]
US 5919328A · Tropsha · 1999 [cited by applicant]
US 5919420A · Niermann · 1999 [cited by applicant]
US 5935391A · Nakahigashi · 1999 [cited by applicant]
US 5945187A · Buch-Rasmussen · 1999 [cited by applicant]
US 5951527A · Sudo · 1999 [cited by applicant]
US 5952069A · Tropsha · 1999 [cited by applicant]
US 5955161A · Tropsha · 1999 [cited by applicant]
US 5961911A · Hwang · 1999 [cited by applicant]
US 5968620A · Harvey · 1999 [cited by applicant]
US 5972297A · Niermann · 1999 [cited by applicant]
US 5972436A · Walther · 1999 [cited by applicant]
US 5985103A · Givens · 1999 [cited by applicant]
US 6001429A · Martin · 1999 [cited by applicant]
US 6009743A · Mayer · 2000 [cited by applicant]
US 6013337A · Knors · 2000 [cited by applicant]
US 6017317A · Newby · 2000 [cited by applicant]
US 6018987A · Mayer · 2000 [cited by applicant]
US 6020196A · Hu · 2000 [cited by applicant]
US 6027619A · Cathey · 2000 [cited by applicant]
US 6032813A · Niermann · 2000 [cited by applicant]
US 6035717A · Carodiskey · 2000 [cited by applicant]
US 6050400A · Taskis · 2000 [cited by applicant]
US 6051151A · Keller · 2000 [cited by applicant]
US 6054016A · Tuda · 2000 [cited by applicant]
US 6054188A · Tropsha · 2000 [cited by applicant]
US 6068884A · Rose · 2000 [cited by applicant]
US 6077403A · Kobayashi · 2000 [cited by applicant]
US 6081330A · Nelson · 2000 [cited by applicant]
US 6082295A · Lee · 2000 [cited by applicant]
US 6083313A · Venkatraman et al. · 2000 [cited by applicant]
US 6085927A · Kusz · 2000 [cited by applicant]
US 6090081A · Sudo · 2000 [cited by applicant]
US 6106678A · Shufflebotham · 2000 [cited by applicant]
US 6110395A · Gibson, Jr. · 2000 [cited by applicant]
US 6110544A · Yang · 2000 [cited by applicant]
US 6112695A · Felts · 2000 [cited by applicant]
US 6116081A · Ghandhi · 2000 [cited by applicant]
US 6117243A · Walther · 2000 [cited by applicant]
US 6118844A · Fischer · 2000 [cited by applicant]
US 6124212A · Fan · 2000 [cited by applicant]
US 6125687A · McClelland · 2000 [cited by applicant]
US 6126640A · Tucker · 2000 [cited by applicant]
US 6136275A · Niermann · 2000 [cited by applicant]
US 6139802A · Niermann · 2000 [cited by applicant]
US 6143140A · Wang · 2000 [cited by applicant]
US 6149982A · Plester · 2000 [cited by applicant]
US 6153269A · Gleason · 2000 [cited by applicant]
US 6156152A · Ogino · 2000 [cited by applicant]
US 6156399A · Spallek · 2000 [cited by applicant]
US 6156435A · Gleason · 2000 [cited by applicant]
US 6160350A · Sakemi · 2000 [cited by applicant]
US 6161712A · Savitz · 2000 [cited by applicant]
US 6163006A · Doughty · 2000 [cited by applicant]
US 6165138A · Miller · 2000 [cited by applicant]
US 6165542A · Jaworowski · 2000 [cited by applicant]
US 6165566A · Tropsha · 2000 [cited by applicant]
US 6171670B1 · Sudo · 2001 [cited by applicant]
US 6175612B1 · Sato · 2001 [cited by applicant]
US 6177142B1 · Felts · 2001 [cited by applicant]
US 6180185B1 · Felts · 2001 [cited by applicant]
US 6180191B1 · Felts · 2001 [cited by applicant]
US 6188079B1 · Juvinall · 2001 [cited by applicant]
US 6189484B1 · Yin · 2001 [cited by applicant]
US 6190992B1 · Sandhu · 2001 [cited by applicant]
US 6193853B1 · Yumshtyk · 2001 [cited by applicant]
US 6196155B1 · Setoyama · 2001 [cited by applicant]
US 6197166B1 · Moslehi · 2001 [cited by applicant]
US 6200658B1 · Walther · 2001 [cited by applicant]
US 6200675B1 · Neerinck · 2001 [cited by applicant]
US 6204922B1 · Chalmers · 2001 [cited by applicant]
US 6210791B1 · Skoog · 2001 [cited by applicant]
US 6213985B1 · Niedospial · 2001 [cited by applicant]
US 6214422B1 · Yializis · 2001 [cited by applicant]
US 6217716B1 · Fai Lai · 2001 [cited by applicant]
US 6223683B1 · Plester · 2001 [cited by applicant]
US 6236459B1 · Negahdaripour · 2001 [cited by applicant]
US 6245190B1 · Masuda · 2001 [cited by applicant]
US 6248219B1 · Wellerdieck · 2001 [cited by applicant]
US 6248397B1 · Ye · 2001 [cited by applicant]
US 6251792B1 · Collins · 2001 [cited by applicant]
US 6254983B1 · Namiki · 2001 [cited by applicant]
US 6261643B1 · Hasz · 2001 [cited by applicant]
US 6263249B1 · Stewart · 2001 [cited by applicant]
US 6271047B1 · Ushio · 2001 [cited by applicant]
US 6276296B1 · Plester · 2001 [cited by applicant]
US 6277331B1 · Konrad · 2001 [cited by applicant]
US 6279505B1 · Plester · 2001 [cited by applicant]
US 6284986B1 · Dietze · 2001 [cited by applicant]
US 6306132B1 · Moorman · 2001 [cited by applicant]
US 6308556B1 · Sagi · 2001 [cited by applicant]
US 6322661B1 · Bailey, III · 2001 [cited by applicant]
US 6331174B1 · Reinhard et al. · 2001 [cited by applicant]
US 6346596B1 · Mallen · 2002 [cited by applicant]
US 6348967B1 · Nelson · 2002 [cited by applicant]
US 6350415B1 · Niermann · 2002 [cited by applicant]
US 6351075B1 · Barankova · 2002 [cited by applicant]
US 6352629B1 · Wang · 2002 [cited by applicant]
US 6354452B1 · DeSalvo · 2002 [cited by applicant]
US 6355033B1 · Moorman · 2002 [cited by applicant]
US 6365013B1 · Beele · 2002 [cited by applicant]
US 6375022B1 · Zurcher · 2002 [cited by applicant]
US 6376028B1 · Laurent · 2002 [cited by applicant]
US 6379757B1 · Iacovangelo · 2002 [cited by applicant]
US 6382441B1 · Carano · 2002 [cited by applicant]
US 6394979B1 · Sharp · 2002 [cited by applicant]
US 6396024B1 · Doughty · 2002 [cited by applicant]
US 6399944B1 · Vasilyev · 2002 [cited by applicant]
US 6402885B2 · Loewenhardt · 2002 [cited by applicant]
US 6410926B1 · Munro · 2002 [cited by applicant]
US 6413645B1 · Graff · 2002 [cited by applicant]
US 6432494B1 · Yang · 2002 [cited by applicant]
US 6432510B1 · Kim · 2002 [cited by applicant]
US 6470650B1 · Lohwasser · 2002 [cited by applicant]
US 6471822B1 · Yin · 2002 [cited by applicant]
US 6475622B2 · Namiki · 2002 [cited by applicant]
US 6482509B2 · Buch-Rasmussen et al. · 2002 [cited by applicant]
US 6486081B1 · Ishikawa · 2002 [cited by applicant]
US 6500500B1 · Okamura · 2002 [cited by applicant]
US 6503579B1 · Murakami · 2003 [cited by applicant]
US 6518195B1 · Collins · 2003 [cited by applicant]
US 6524448B2 · Brinkmann · 2003 [cited by applicant]
US 6539890B1 · Felts · 2003 [cited by applicant]
US 6544610B1 · Minami · 2003 [cited by applicant]
US 6551267B1 · Cohen · 2003 [cited by applicant]
US 6558679B2 · Flament-Garcia et al. · 2003 [cited by applicant]
US 6562189B1 · Quiles · 2003 [cited by applicant]
US 6565791B1 · Laurent · 2003 [cited by applicant]
US 6582426B2 · Moorman · 2003 [cited by applicant]
US 6582823B1 · Sakhrani et al. · 2003 [cited by applicant]
US 6584828B2 · Sagi · 2003 [cited by applicant]
US 6595961B2 · Hetzler · 2003 [cited by applicant]
US 6597193B2 · Lagowski · 2003 [cited by applicant]
US 6599569B1 · Humele · 2003 [cited by applicant]
US 6599594B1 · Walther · 2003 [cited by applicant]
US 6602206B1 · Niermann · 2003 [cited by applicant]
US 6616632B2 · Sharp · 2003 [cited by applicant]
US 6620139B1 · Plicchi · 2003 [cited by applicant]
US 6620334B2 · Kanno · 2003 [cited by applicant]
US 6623861B2 · Martin · 2003 [cited by applicant]
US 6638403B1 · Inaba · 2003 [cited by applicant]
US 6638876B2 · Levy · 2003 [cited by applicant]
US 6645354B1 · Gorokhovsky · 2003 [cited by applicant]