Solid-state imaging device and solid-state imaging apparatus
A solid-state imaging device including: a semiconductor substrate having a first surface and a second surface opposed to each other, and including a photoelectric converter provided for each of pixel regions; an impurity diffusion region provided, for each of the pixel regions, in proximity to the first surface of the semiconductor substrate; and a contact electrode embedded in the semiconductor substrate from the first surface, and provided over and in contact with the impurity diffusion regions each provided for each of the pixel regions adjacent to each other.
1. A light detecting device, comprising:
a substrate;
a first pixel including a first photoelectric conversion region and a first transistor;
a second pixel including a second photoelectric conversion region and a second transistor;
a pixel separating trench disposed in the substrate between the first photoelectric conversion region and the second photoelectric conversion region in a cross-sectional view; and
a contact electrode disposed in a part of the pixel separating trench and in contact with a source/drain region of the first transistor and a source/drain region of the second transistor,
wherein the contact electrode includes a first width and a second width in the cross-sectional view,
wherein the first width is different from the second width in the cross-sectional view, and
wherein the first pixel is adjacent to the second pixel.
2. The light detecting device according to claim 1 , wherein the first width of the contact electrode is disposed outside the substrate in the cross-sectional view.
3. The light detecting device according to claim 1 , wherein the second width of the contact electrode is disposed inside the substrate in the cross-sectional view.
4. The light detecting device according to claim 1 , wherein the first width of the contact electrode is greater than the second width of the contact electrode in the cross-sectional view.
5. The light detecting device according to claim 1 , wherein the source/drain region of the first transistor and the source/drain region of the second transistor are a n-type impurity diffusion region.
6. The light detecting device according to claim 1 , wherein the first transistor is a reset transistor, the second transistor is an amp transistor.
7. The light detecting device according to claim 1 , wherein the contact electrode includes first, second, third and fourth sides in the cross-sectional view.
8. The light detecting device according to claim 7 , the first side and the second side are in contact with the source/drain region of the first transistor.
9. The light detecting device according to claim 7 , wherein the third side and the fourth side are in contact with the source/drain region of the second transistor.
10. The light detecting device according to claim 7 , wherein the first side is perpendicular to the second side.
11. The light detecting device according to claim 7 , wherein the third side is perpendicular to the fourth side.
12. A light detecting apparatus, comprising:
a light detecting device, comprising:
a substrate;
a first pixel including a first photoelectric conversion region and a first transistor;
a second pixel including a second photoelectric conversion region and a second transistor;
a pixel separating trench disposed in the substrate between the first photoelectric conversion region and the second photoelectric conversion region in a cross-sectional view; and
a contact electrode disposed in a part of the pixel separating trench and in contact with a source/drain region of the first transistor and a source/drain region of the second transistor,
wherein the contact electrode includes a first width and a second width in the cross-sectional view,
wherein the first width is different from the second width in the cross-sectional view, and
wherein the first pixel is adjacent to the second pixel.
13. The light detecting apparatus according to claim 12 , wherein the first width of the contact electrode is disposed outside the substrate in the cross-sectional view.
14. The light detecting apparatus according to claim 12 , wherein the second width of the contact electrode is disposed inside the substrate in the cross-sectional view.
15. The light detecting apparatus according to claim 12 , wherein the first width of the contact electrode is greater than the second width of the contact electrode in the cross-sectional view.
16. The light detecting apparatus according to claim 12 , wherein the contact electrode includes first, second, third and fourth sides in the cross-sectional view.
17. The light detecting apparatus according to claim 16 , the first side and the second side are in contact with the source/drain region of the first transistor.
18. The light detecting apparatus according to claim 16 , wherein the third side and the fourth side are in contact with the source/drain region of the second transistor.
19. The light detecting apparatus according to claim 16 , wherein the first side is perpendicular to the second side.
20. The light detecting apparatus according to claim 16 , wherein the third side is perpendicular to the fourth side.