Low stress asymmetric dual side module
Implementations of semiconductor packages may include: a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include two or more spacers coupled to the first side of the first substrate and a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the two or more spacers.
1. A semiconductor package comprising:
a first die coupled to a first substrate through a first sintering material;
a second die coupled to a second substrate through a second sintering material;
a first clip coupled to the first die through a third sintering material;
a second clip coupled to the second die through a fourth sintering material; and
a spacer coupled between the first substrate and the second substrate, the spacer coupled directly to the first substrate and directly to the second substrate;
wherein a perimeter of the first substrate only partially overlaps a perimeter of the second substrate and the perimeter of the second substrate only partially overlaps the perimeter of the first substrate when the first substrate and second substrate are coupled through the spacer.
2. The semiconductor package of claim 1 , wherein only a portion of the first substrate is coupled directly under the second substrate and only a portion of the second substrate is coupled directly over the first substrate.
3. The semiconductor package of claim 1 , wherein the first sintering material is directly coupled to and between the first substrate and the first die, the second sintering material is directly coupled to and between the second substrate and the second die, the third sintering material is directly coupled to and between the first die and the first clip, and the fourth sintering material is directly coupled to and between the second die and the second clip.
4. The semiconductor package of claim 1 , further comprising a heat sink coupled with one of the first substrate, the second substrate, or any combination thereof.
5. The semiconductor package of claim 1 , wherein the spacer is comprised of electrically conductive material and electrically couples the first substrate to the second substrate.
6. The semiconductor package of claim 1 , wherein the first substrate is directly coupled to the first die through the first sintering material and is directly coupled to the first clip through the first sintering material.
7. A semiconductor package comprising:
a lead frame;
a first substrate mechanically and electrically coupled to a first side of the lead frame;
a second substrate mechanically and electrically coupled to a second side of the lead frame;
a spacer coupled to and between each of the first substrate and the second substrate;
a first die coupled to the first substrate through a first sintering material;
a second die coupled to the second substrate through a second sintering material;
a first clip coupled to the first die through a third sintering material; and
a second clip coupled to the second die through a fourth sintering material.
8. The semiconductor package of claim 7 , further comprising a third die coupled to the first substrate through the first sintering material, a fourth die coupled to the second substrate through the second sintering material, a third clip coupled to the third die through the third sintering material, and a fourth clip coupled to the fourth die through the fourth sintering material.
9. The semiconductor package of claim 7 , wherein the first clip is directly coupled to the first die through the third sintering material and is directly coupled to the first substrate through the first sintering material.
10. The semiconductor package of claim 7 , further comprising a heat sink coupled with one of the first substrate or the second substrate.
11. The semiconductor package of claim 7 , wherein the spacer is comprised of electrically conductive material and electrically couples the first substrate to the second substrate.
12. The semiconductor package of claim 7 , wherein the first substrate and the second substrate comprise one of a direct bonded copper substrate (DBC), an insulated metal substrate technology (IMST) substrate, an active metal bonding (AMB) substrate, or any combination thereof.
13. A semiconductor package comprising:
a first substrate directly coupled to a spacer;
a second substrate directly coupled to the first substrate through the spacer;
a lead frame coupled between the first substrate and the second substrate;
a first clip coupled to the first substrate through a first sintering material; and
a second clip coupled to the second substrate through a second sintering material;
wherein the first substrate and the second substrate are asymmetrically coupled through the lead frame.
14. The semiconductor package of claim 13 , wherein an outer edge of the first substrate extends beyond a perimeter of the second substrate and an outer edge of the second substrate extends beyond a perimeter of the first substrate.
15. The semiconductor package of claim 13 , further comprising a first die coupled between the first substrate and the first clip and a second die coupled between the second substrate and the second clip.
16. The semiconductor package of claim 13 , further comprising a heat sink coupled with one of the first substrate or the second substrate.
17. The semiconductor package of claim 13 , wherein the spacer is comprised of electrically conductive material and electrically couples the first substrate to the second substrate.
18. The semiconductor package of claim 13 , wherein the first substrate and the second substrate comprise one of a direct bonded copper substrate (DBC), an insulated metal substrate technology (IMST) substrate, an active metal bonding (AMB) substrate, or any combination thereof.
19. The semiconductor package of claim 13 , wherein the first sintering material bonds the first substrate to the first clip and a first die and the second sintering material bonds the second substrate to the second clip and a second die.
20. The semiconductor package of claim 13 , wherein a perimeter of a first side of the first substrate extends outside of a perimeter of a first side of the second substrate and the perimeter of the first side of the second substrate extends outside of the perimeter of the first side of the first substrate, wherein the first side of the first substrate faces the first side of the second substrate.