POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND METHOD FOR POLISHING A SUBSTRATE USING THE SAME
A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm 2 to 1400 nm 2 according to Equation 1 below; Ds = MPS 2 - D 1 0 2 [ Equation 1 ] In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D 10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.
1 . A polishing composition for a semiconductor process, the polishing composition comprising:
polishing particles,
wherein the polishing particles have a Ds value of 700 nm 2 to 1400 nm 2 according to Equation 1 below;
Ds
=
MPS
2
-
D
1
0
2
[
Equation
1
]
In Equation 1, MPS is a mean particle size of primary particles of the polishing particles, and D 10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.
2 . The polishing composition of claim 1 , wherein the polishing particles have a Db value of 500 nm 2 to 850 nm 2 according to Equation 2 below;
Db
=
D
9
0
2
-
D
5
0
2
[
Equation
2
]
In Equation 2, D 90 is a particle diameter at a 90% point on the cumulative curve of the particle size distribution of the primary particles of the polishing particles, and D 50 is a particle diameter at a 50% point on the cumulative curve of the particle size distribution of the primary particles of the polishing particles.
3 . The polishing composition of claim 1 , wherein the MPS value is from 25 nm to 55 nm.
4 . The polishing composition of claim 1 , wherein the polishing particles are concentrated and purified using an ultrafiltration filter.
5 . The polishing composition of claim 4 , wherein the ultrafiltration filter comprises pores having a diameter of from 5 nanometers to 25 nanometers.
6 . The polishing composition of claim 1 , wherein a zeta potential of the polishing composition is from +10 mV to +40 mV.
7 . The polishing composition of claim 1 , wherein the polishing composition comprises from 0.5 wt % to 10 wt % of the polishing particles.
8 . The polishing composition of claim 1 , wherein the polishing particles comprise metal oxide particles, and
wherein the metal oxide particles comprise at least one of colloidal silica, fumed silica, ceria, alumina, titania, and zirconia.
9 . The polishing composition of claim 1 , wherein a pH of the polishing composition is from 2 to 5.
10 . A method of preparing a substrate, the method comprising:
polishing the substrate by applying the polishing composition of claim 1 as a slurry.