Transversely-excited film bulk acoustic resonators with interdigital transducer configured to reduce diaphragm stress
An acoustic resonator is provided that includes a substrate; a piezoelectric layer having a portion that forms a diaphragm over a cavity; and IDT on the piezoelectric layer that includes a first conductor level including first and second busbars disposed on respective portions of the piezoelectric layer, a first set of elongated fingers extending from the first bus bar onto the diaphragm, and a second set of elongated fingers extending from the second bus bar onto the diaphragm, the second set of elongated fingers interleaved with the first set of elongated fingers. The acoustic resonator also includes a second conductor level over the piezoelectric layer and covering at least portions of the first and second busbars.
1 . An acoustic resonator comprising:
a substrate;
a piezoelectric layer attached directly or via one or more intermediate layers to the substrate and having a portion that forms a diaphragm over a cavity;
an interdigital transducer (IDT) at a surface of the piezoelectric layer, the IDT including:
a first conductor level including first and second busbars disposed on respective portions of the piezoelectric layer,
a first set of elongated fingers extending from the first busbar onto the diaphragm, and
a second set of elongated fingers extending from the second busbar onto the diaphragm, the second set of elongated fingers interleaved with the first set of elongated fingers; and
a second conductor level covering at least portions of the first and second busbars,
wherein the second conductor level has a thickness that is greater than a thickness of the first conductor level.
2 . The acoustic resonator of claim 1 , wherein the IDT is configured such that a radio frequency signal applied between the first and second busbars excites a primary shear acoustic mode in the diaphragm.
3 . The acoustic resonator of claim 1 , further comprising:
a first set of dummy fingers extending from the first busbar onto the diaphragm, each finger of the first set of dummy fingers aligned with a corresponding finger of the second set of elongated fingers; and
a second set of dummy fingers extending from the second busbar onto the diaphragm, each finger of the second set of dummy fingers aligned with a corresponding finger of the first set of elongated fingers.
4 . The acoustic resonator of claim 1 , wherein an edge of at least one of the first and second busbars is offset from an edge of the cavity in a direction substantially parallel to the surface of the piezoelectric layer.
5 . The acoustic resonator of claim 4 , wherein the second conductor level covers substantially all of the at least one of the first and second busbars.
6 . The acoustic resonator of claim 1 , wherein the piezoelectric layer is one of lithium niobate and lithium tantalate, and the piezoelectric layer comprises a crystallographic orientation that is one of a Z-cut, a rotated Z-cut, and a rotated YX-cut.
7 . The acoustic resonator of claim 1 , wherein the first and second busbars are not on the diaphragm.
8 . An acoustic resonator comprising:
a substrate;
a piezoelectric layer attached directly or via one or more intermediate layers to the substrate and having a portion that forms a diaphragm over a cavity;
a first conductor level at a surface of the piezoelectric layer, the first conductor level including:
first and second busbars;
a first set of elongated fingers extending from the first busbar onto the diaphragm,
a second set of elongated fingers extending from the second busbar onto the diaphragm, the second set of elongated fingers interleaved with the first set of elongated fingers; and
a second conductor level covering at least portions of the first and second busbars,
wherein the piezoelectric layer and the first and second sets of elongated fingers are configured such that a radio frequency signal applied between the first and second busbars excites a primary shear acoustic mode in the diaphragm.
9 . The acoustic resonator of claim 8 , wherein the first and second busbars are not on the diaphragm.
10 . The acoustic resonator of claim 8 , wherein the piezoelectric layer is one of lithium niobate and lithium tantalate, and the piezoelectric layer comprises a crystallographic orientation that is one of a Z-cut, a rotated Z-cut, and a rotated YX-cut.
11 . The acoustic resonator of claim 8 , further comprising:
a first set of dummy fingers extending from the first busbar onto the diaphragm, each finger of the first set of dummy fingers aligned with a corresponding finger of the second set of elongated fingers; and
a second set of dummy fingers extending from the second busbar onto the diaphragm, each finger of the second set of dummy fingers aligned with a corresponding finger of the first set of elongated fingers.
12 . The acoustic resonator of claim 8 , wherein an edge of at least one of the first and second busbars is offset from an edge of the cavity in a direction substantially parallel to the surface of the piezoelectric layer.
13 . The acoustic resonator of claim 12 , wherein the second conductor level covers substantially all of the at least one of the first and second busbars.
14 . The acoustic resonator of claim 8 , wherein the second conductor level has a thickness that is greater than a thickness of the first conductor level.
15 . A filter device comprising:
a plurality of acoustic resonators, with at least one resonator of the plurality of acoustic resonators comprising:
a substrate;
a piezoelectric layer attached directly or via one or more intermediate layers to the substrate and having a portion that forms a diaphragm over a cavity;
a first conductor level at a surface of the piezoelectric layer, the first conductor level including:
first and second busbars;
a first set of elongated fingers extending from the first busbar onto the diaphragm,
a second set of elongated fingers extending from the second busbar onto the diaphragm, the second set of elongated fingers interleaved with the first set of elongated fingers; and
a second conductor level covering at least portions of the first and second busbars,
wherein, for the at least one acoustic resonator, the second conductor level has a thickness that is greater than a thickness of the first conductor level.
16 . The filter device of claim 15 , wherein, for the at least one acoustic resonator, the piezoelectric layer and the first and second sets of elongated fingers are configured such that a radio frequency signal applied between the first and second busbars excites a primary shear acoustic mode in the diaphragm.
17 . The filter device of claim 15 , wherein, for the at least one acoustic resonator, an edge of at least one of the first and second busbars is offset from an edge of the cavity in a direction substantially parallel to the surface of the piezoelectric layer.
18 . The filter device of claim 17 , wherein, for the at least one acoustic resonator, the second conductor level covers substantially all of the at least one of the first and second busbars.