IP Library › Patent Application 18418268
Patent Application
App. No. 18/418,268

RESIN COMPOSITION FOR NON-CONDUCTIVE FILM WITH EXCELLENT HIGH TEMPERATURE PROPERTIES FOR 3D TSV PACKAGES

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Patent No.
US None
App. No.
18/418,268
Abstract

The disclosure relates to compositions for forming films and the use of said films in three-dimension through-silicon-via (3D TSV) packages. In certain aspects, the disclosure relates to compositions comprising one or more resins, one or more imidazoles with latent thermal activity, one or more inorganic fillers, and one or more additives, to B-stage films prepared from the disclosed compositions, and to cured films obtained after cure of the disclosed compositions.

Claims (71)

1 . A composition comprising:

one or more resins selected from the group consisting of maleimide-containing resins, nadimide-containing resins, itaconimide-containing resins, epoxy resins, (meth)acrylate-containing resins, and phenolic-containing resins,

one or more imidazoles with latent thermal activity,

one or more inorganic fillers, and

one or more additives selected from the group consisting of adhesion promoters and film formers,

wherein:

after the composition forms a film, the film has the following physical properties:

a Tg of >200° C. as measured by dynamic mechanical analysis (DMA),

a storage modulus at 25° C. of <6.5 GPa,

a storage modulus at 250° C.>0.1 GPa, and

a coefficient of thermal expansion (CTE)<250 ppm/° C.

2 . The composition of claim 1 , wherein, after the composition forms a film, the film has the following physical properties:

a Tg of >230° C. as measured by dynamic mechanical analysis (DMA),

a storage modulus at 25° C. of <5 GPa,

a storage modulus at 230° C.>0.3 GPa, and

a coefficient of thermal expansion (CTE)<120 ppm/° C.

3 . The composition of claim 1 , wherein the one or more imidazoles with latent thermal activity are one or more encapsulated imidazoles having latent thermal activity.

4 . The composition of claim 1 , wherein the maleimide-containing resin is a compound represented by

wherein:

each R is independently selected from the group consisting of H and substituted or unsubstituted alkyl;

each m is independently selected from the group consisting of 0, 1, 2, 3, or 4; and

n is 0, 1, 2, 3, 4, or 5, or is a compound represented by

wherein n is 0, 1, 2, 3, 4, or 5.

5 . The composition of claim 1 , wherein the (meth)acrylate resin is represented by

wherein n is 0, 1, 2, 3, 4, or 5.

6 . The composition of claim 1 , wherein the epoxy resin is a compound represented by

wherein n is 0, 1, 2, 3, 4, or 5, and m is 0, 1, 2, 3, 4, or 5.

7 . The composition of claim 1 , wherein, after the composition forms a film, the film has the following physical properties:

a differential scanning calorimetry (DSC) onset temperature from 120° C. to 200° C. as measured by DSC with a 10° C./min ramping rate, and

a minimum film melt viscosity from 10 Pa·s to 10,000 Pa·s as measured using a DHR2 rheometer with a 10° C./min ramping rate in N 2 .

8 . The composition of claim 1 , wherein, after the composition forms a film, the film has the following physical properties:

a differential scanning calorimetry (DSC) onset temperature from 120° C. to 150° C. as measured by DSC with a 10° C./min ramping rate, and

a minimum film melt viscosity from 300 Pa·s to 3,000 Pa·s as measured using a DHR2 rheometer with a 10° C./min ramping rate in N 2 .

9 . The composition of claim 1 , wherein, after the composition forms a film, the film has a ΔT from the DSC onset temperature to the DSC peak temperature that is less than 20° C. or less than 15° C.

10 . The composition of claim 1 , wherein, after the composition forms a film, the film has a ΔT from the DSC onset temperature to the DSC peak temperature that is less than 10° C. or less than 5° C.

11 . A method of preparing a cured film, the method comprising

providing a composition according to claim 1 ;

casting the composition into a film; and

exposing the cast film to elevated temperature to cure the film.

12 . A method of preparing a cured film, the method comprising

providing a composition comprising

one or more resins selected from the group consisting of maleimide-containing resins, nadimide-containing resins, itaconimide-containing resins, epoxy resins, (meth)acrylate-containing resins, and phenolic-containing resins,

one or more imidazoles with latent thermal activity,

one or more inorganic fillers, and

one or more additives selected from the group consisting of adhesion promoters and film formers;

casting the composition into a film; and

exposing the cast film to elevated temperature to cure the film.

13 . The method according to claim 12 , wherein the one or more imidazoles with latent thermal activity are one or more encapsulated imidazoles having latent thermal activity.

14 . The method according to claim 11 , wherein the maleimide-containing resin is a compound represented by

wherein:

each R is independent selected from the group consisting of H and substituted or unsubstituted alkyl;

each m is independent selected from the group consisting of 0, 1, 2, 3, or 4; and

n is 0, 1, 2, 3, 4, or 5, or is a compound represented by

wherein n is 0, 1, 2, 3, 4, or 5.

15 . The method according to claim 11 , wherein the (meth)acrylate resin is represented by

wherein n is 0, 1, 2, 3, 4, or 5.

16 . The method according to claim 11 , wherein the epoxy resin is a compound represented by

wherein n is 0, 1, 2, 3, 4, or 5, and m is 0, 1, 2, 3, 4, or 5.

17 . A cured film prepared according to the method of claim 11 .

18 . A film prepared according to the method of claim 11 , wherein the film has the following physical properties:

a Tg of >200° C. as measured by dynamic mechanical analysis (DMA),

a storage modulus at 25° C. of <5.5 GPa,

a storage modulus at 250° C.>0.1 GPa, and

a coefficient of thermal expansion (CTE)<250 ppm/° C.

19 . A film prepared according to the method of claim 11 , wherein the film has the following physical properties:

a Tg of >230° C. as measured by dynamic mechanical analysis (DMA),

a storage modulus at 25° C. of <5 GPa,

a storage modulus at 230° C.>0.2 GPa, and

a coefficient of thermal expansion (CTE)<120 ppm/° C.

20 . The film of claim 17 , wherein the film is an underfill film.

21 . The film of claim 17 , wherein the film is a wafer-level underfill film (WAUF).