Dynamic vision sensor with bias variation circuit, image signal processor and application processor
Disclosed is a dynamic vision sensor. The dynamic vision sensor includes a photodiode configured to generate a first photodiode current in response to a change in light due to a movement of an object, a first transistor; a first node connected to the photodiode and the first transistor; a second node connected to the first transistor and being configured to receive a first voltage and receive a second voltage, a ground, a second transistor connected to the first node and the ground, a third node connected to the first transistor and the second transistor, and a current source connected to the third node, wherein the first voltage has a first level and the second voltage has a second level different from the first level.
1 . A dynamic vision sensor (DVS) comprising:
a photodiode configured to generate a first photodiode current in response to a change in light due to a movement of an object;
a first transistor;
a first node connected to the photodiode and the first transistor;
a second node connected to the first transistor and being configured to receive a first voltage and receive a second voltage;
a ground;
a second transistor connected to the first node and the ground;
a third node connected to the first transistor and the second transistor; and
a current source connected to the third node,
wherein the first voltage has a first level and the second voltage has a second level different from the first level.
2 . The dynamic vision sensor of claim 1 , wherein the third node is connected to a gate of the first transistor, and
wherein the first node is connected to a gate of the second transistor.
3 . The dynamic vision sensor of claim 2 , wherein the photodiode is configured to generate a second photodiode current in response to the first voltage.
4 . The dynamic vision sensor of claim 3 , wherein the photodiode is configured to generate a third photodiode current in response to the second voltage.
5 . The dynamic vision sensor of claim 3 , wherein the second node is configured to receive a third voltage, and
wherein the third voltage has a third level different from at least one of the first level and the second level.
6 . The dynamic vision sensor of claim 3 , wherein the second node is configured to receive the first voltage and the second voltage alternately.
7 . The dynamic vision sensor of claim 3 , wherein the second node is configured to receive the first voltage from a bias variation circuit located in a first chip package different from a second chip package in which the photodiode is located.
8 . The dynamic vision sensor of claim 3 , wherein the second node is configured to receive the first voltage from a bias variation circuit, and
wherein the bias variation circuit and the photodiode are located in a single chip package.
9 . The dynamic vision sensor of claim 8 , wherein the current source is configured to receive a fourth voltage from the bias variation circuit.
10 . The dynamic vision sensor of claim 9 , wherein the current source is configured to receive a fifth voltage from the bias variation circuit.
11 . The dynamic vision sensor of claim 8 , wherein the bias variation circuit is configured to supply the first and second voltage to the second node based on a bias variation enable signal.
12 . The dynamic vision sensor of claim 8 , wherein the bias variation circuit is configured not to supply the first voltage and second voltage to the second node based on a bias variation disable signal.
13 . A dynamic vision sensor (DVS) comprising:
a photodiode configured to generate a first photodiode current in response to a change in light due to a movement of an object;
a first transistor;
a first node connected to the photodiode and the first transistor;
a second node connected to the first transistor;
a ground;
a second transistor connected to the first node and the ground;
a third node connected to the first transistor and the second transistor; and
a current source connected to the third node and configured to receive a first voltage and a second voltage,
wherein the first voltage has a first level and the second voltage has a second level different from the first level.
14 . The dynamic vision sensor of claim 13 , wherein the third node is connected to a gate of the first transistor, and
wherein the first node is connected to a gate of the second transistor.
15 . The dynamic vision sensor of claim 14 , wherein the photodiode configured to generate a second photodiode current in response to the first voltage.
16 . The dynamic vision sensor of claim 15 , wherein the photodiode is configured to generate a third photodiode current in response to the second voltage.
17 . The dynamic vision sensor of claim 15 , wherein the current source is configured to receive a third voltage having a third level different from at least one of the first level and second level.
18 . The dynamic vision sensor of claim 15 , wherein the current source is configured to receive the first voltage and the second voltage alternately.
19 . The dynamic vision sensor of claim 15 , wherein the second node is configured to receive the first voltage from a bias variation circuit located in a first chip package different from a second chip package in which the photodiode is located.
20 . The dynamic vision sensor of claim 15 , wherein the second node is configured to receive the first voltage from a bias variation circuit, and
wherein the bias variation circuit and the photodiode are located in a single chip package.