Granted Patent B2

US 12,532,594 · App. 18/425,644 · Granted Jan 20, 2026

Inventors: Ashish Tandon (Sunnyvale, CA); Rajat Sharma (San Jose, CA); Joseph Flemish (Palo Alto, CA); Andrei Papou (San Jose, CA); Wen Yu (Pleasanton, CA); Erik William Young (San Jose, CA); Yu-Chen Shen (San Jose, CA); Luke Gordon (Santa Barbara, CA)

Assignee: Adeia Semiconductor Inc.

H10H29/142F21S41/153H01S5/00H10H20/01335H10H20/819H10H20/8242H10H20/8512H10H20/8514H10H20/8515H10H20/018H10H20/032H10H20/0361H10H20/813H10H20/825H10H20/83

Abstract

Claims (32)

1 . A light emitting diode device comprising:

a first semiconductor layer having a first surface and an opposing second surface, an active region on the first surface of the first semiconductor layer, and a second semiconductor layer on the active region;

a trench extending from a first surface of the second semiconductor layer, through the active region, and at least partially through the first semiconductor layer that electrically isolates a plurality of light emitting regions;

a first metal contact extending from the first surface of the second semiconductor layer to the first semiconductor layer and directly connecting to a sidewall of the first semiconductor layer;

a second metal contact to the second semiconductor layer;

a passivation layer that isolates the first metal contact from the second semiconductor layer, the active region, and the second metal contact; and

a wavelength converting layer on the second surface of the first semiconductor layer.

2 . The light emitting diode device of claim 1 , wherein the first metal contact is an n-type contact.

3 . The light emitting diode device of claim 1 , wherein the first semiconductor layer comprises an 9 -type semiconductor layer.

4 . The light emitting diode device of claim 1 , wherein the first semiconductor layer comprises an n-type semiconductor layer.

5 . The light emitting diode device of claim 1 , wherein the second semiconductor layer comprises a p-type semiconductor layer.

6 . The light emitting diode device of claim 1 , wherein the active region comprises a partially doped or undoped Type III-nitride material.

7 . The light emitting diode device of claim 1 , further comprising at least one dielectric layer on the second metal contact.

8 . The light emitting diode device of claim 7 , further comprising a metal layer on the at least one dielectric layer.

9 . The light emitting diode device of claim 8 , further comprising a reflective layer on the metal layer.

10 . The light emitting diode device of claim 9 , wherein the reflective layer is a contact.

11 . A light emitting diode device comprising;

a first semiconductor layer having a first surface and an opposing second surface, an active region on the first surface of the first semiconductor layer, and a second semiconductor layer on the active region;

a trench extending from a first surface of the second semiconductor layer, through the active region, and completely through the first semiconductor layer that electrically isolates a plurality of light emitting regions;

a first metal contact extending from the first surface of the second semiconductor layer to the first semiconductor layer and electrically connecting to a sidewall of the first semiconductor layer;

a second metal contact to the second semiconductor layer;

a passivation layer that isolates the first metal contact from the second semiconductor layer, the active region, and the second metal contact; and

a wavelength converting layer on the second surface of the first semiconductor layer.

12 . The light emitting diode device of claim 11 , wherein the first metal contact is an n-type contact and the second metal contact is a p-type contact.

13 . The light emitting diode device of claim 11 , wherein the first semiconductor layer comprises an n-type semiconductor layer.

14 . The light emitting diode device of claim 11 , wherein the second semiconductor layer comprises a p-type semiconductor layer.

15 . The light emitting diode device of claim 11 , wherein the active region comprises a partially doped or undoped Type III-nitride material.

16 . The light emitting diode device of claim 11 , further comprising at least one dielectric layer on the second metal contact.

17 . The light emitting diode device of claim 16 , further comprising a metal layer on the at least one dielectric layer.

18 . The light emitting diode device of claim 17 , further comprising a reflective layer on the metal layer.

19 . The light emitting diode device of claim 18 , wherein the reflective layer is a contact.

20 . The light emitting diode device of claim 11 , wherein the sidewall of the first semiconductor layer is at least partially free of a dielectric material.

Assignments (3)

Priority Claims (1)

Continuity (4)

References Cited (196)