Interconnect structures
Representative techniques and devices, including process steps may be employed to mitigate undesired dishing in conductive interconnect structures and erosion of dielectric bonding surfaces. For example, an embedded layer may be added to the dished or eroded surface to eliminate unwanted dishing or voids and to form a planar bonding surface. Additional techniques and devices, including process steps may be employed to form desired openings in conductive interconnect structures, where the openings can have a predetermined or desired volume relative to the volume of conductive material of the interconnect structures. Each of these techniques, devices, and processes can provide for the use of larger diameter, larger volume, or mixed-sized conductive interconnect structures at the bonding surface of bonded dies and wafers.
1. A bonded structure comprising:
a first element including a first dielectric layer, a first conductive structure at least partially embedded in the first dielectric layer, and a second conductive structure at least partially embedded in the first dielectric layer, a cross-sectional width of the first conductive structure being greater than a width of the second conductive structure;
a second element including a second dielectric layer, a third conductive structure at least partially embedded in the second dielectric layer, and a fourth conductive structure at least partially embedded in the second dielectric layer, the first dielectric layer and the second dielectric layer being directly bonded to one another without an intervening adhesive, the first conductive structure and the third conductive structure being in contact with and bonded to one another; and
an embedded layer disposed partially between the first and the third conductive structures.
2. The bonded structure of claim 1 , further comprising a second embedded layer disposed partially between the second and fourth conductive structures.
3. The bonded structure of claim 2 , wherein a volume of the embedded layer is greater than a volume of the second embedded layer.
4. The bonded structure of claim 2 , wherein the second conductive structure and the fourth conductive structure are in contact with and bonded to one another.
5. The bonded structure of claim 1 , wherein the embedded layer includes an air gap.
6. The bonded structure of claim 1 , wherein the second and fourth conductive structures are in contact with and bonded together without an embedded layer therebetween.
7. The bonded structure of claim 1 , wherein the embedded layer includes a silicon-containing material.
8. The bonded structure of claim 1 , wherein the embedded layer includes a conductive material that is different from a material of the first conductive structure.
9. The bonded structure of claim 1 , wherein at least a portion of the embedded layer is in contact with a portion of the first dielectric layer.
10. The bonded structure of claim 1 , wherein the first conductive structure comprises a barrier layer that includes tantalum titanium, or cobalt.
11. A bonded structure comprising:
a first element including a first dielectric layer, a first conductive structure including a first conductive material partially and conformally disposed in a first cavity formed in the first dielectric layer defining a first opening smaller than the first cavity, and a second conductive structure including the first conductive material partially and conformally disposed in a second cavity formed in the first dielectric layer defining a second opening smaller than the second cavity, surfaces of the first conductive material at least partially coated with a material different from the first conductive material, a cross-sectional width of the first conductive structure being greater than a cross-sectional width of the second conductive structure and the first opening being greater than the second opening; and
a second element including a second dielectric layer, a third conductive structure, and a fourth conductive structure, the first dielectric layer and the second dielectric layer being directly bonded to one another without an intervening adhesive, a first portion of the first conductive material and the third conductive structure being in contact with and bonded to one another and a second portion of the first conductive material being spaced apart from the third conductive structure by the first opening.
12. The bonded structure of claim 11 , wherein the second conductive structure and the fourth conductive structure are in contact with and bonded to one another.
13. The bonded structure of claim 11 , wherein a volume of the second opening is greater than a volume of the first conductive material of the second conductive structure.
14. The bonded structure of claim 11 , wherein a cross-sectional width of the first opening is more than three times larger than a thickness of the first conductive material of the first conductive structure.
15. The bonded structure of claim 14 , wherein a depth of the first opening is greater than the cross-sectional width of the first opening.
16. The bonded structure of claim 11 , wherein the material coated on the surfaces of the first conductive material includes a silicon-containing dielectric material.
17. The bonded structure of claim 11 , wherein the material coated on the surfaces of the first conductive material includes tungsten, nickel, titanium, or cobalt.
18. The bonded structure of claim 11 , wherein the first conductive structure is a through via and the first opening is a pass-through opening.
19. The bonded structure of claim 11 , wherein a thickness of the material coated on the surfaces of the first conductive material is thinner than a thickness of the first conductive material.
20. The bonded structure of claim 11 , wherein a thickness of the first conductive material in the first cavity is thinner than a thickness of the first conductive material in the second cavity.