METHOD FOR PREPARING MULTI-SUPERCONDUCTING MATERIAL LAYERS, QUANTUM DEVICE AND QUANTUM CHIP

1 . A method for preparing multi-superconducting material layers, comprising:

depositing a first superconducting material layer on a substrate, the first superconducting material layer being formed by covering a first superconducting material in a first target region range with a first hard mask in the first target region range;

depositing a second superconducting material on the substrate deposited with the first superconducting material layer;

covering the second superconducting material with a second hard mask; and

performing etching treatment on the second hard mask and the second superconducting material to obtain a second superconducting material layer formed by covering the second superconducting material in a second target region range with the second hard mask in the second target region range.

2 . The method according to claim 1 , wherein depositing the first superconducting material layer on the substrate comprises:

depositing the first superconducting material on the substrate;

covering the first superconducting material with the first hard mask;

determining the first target region range in which the first superconducting material is to retain on the substrate; and

etching away a first hard mask of a first other region range in the first hard mask and a superconducting material of the first other region range in the first superconducting material, respectively, wherein the first other region range is a region range on the substrate in addition to the first target region range.

3 . The method according to claim 1 , wherein performing etching treatment on the second hard mask and the second superconducting material to obtain a second superconducting material layer formed by covering the second superconducting material in a second target region range with the second hard mask in the second target region range comprises:

etching away a second hard mask of a second other region range in the second hard mask and a superconducting material of the second other region range in the second superconducting material, respectively, wherein the second other region range is a region range on the substrate in addition to the second target region range.

4 . The method according to claim 1 , wherein after performing etching treatment on the second hard mask and the second superconducting material to obtain a second superconducting material layer formed by covering the second superconducting material in a second target region range with the second hard mask in the second target region range, the method further comprises:

etching away the first hard mask on the first superconducting material layer and the second hard mask on the second superconducting material layer to obtain a first target superconducting device on the substrate.

5 . The method according to claim 4 , wherein etching away the first hard mask on the first superconducting material layer and the second hard mask on the second superconducting material layer to obtain a first target superconducting device on the substrate comprises:

etching away the first hard mask on the first superconducting material layer and the second hard mask on the second superconducting material layer by using a dilute hydrofluoric acid (DHF) solution to obtain the first target superconducting device on the substrate.

6 . The method according to claim 1 , wherein after performing etching treatment on the second hard mask and the second superconducting material to obtain a second superconducting material layer formed by covering the second superconducting material in a second target region range with the second hard mask in the second target region range, the method further comprises:

depositing a third superconducting material on the first superconducting material layer and a first other region range, wherein the first other region range is a region range on the substrate in addition to the first target region range;

covering the third superconducting material with a nitride used as a third hard mask;

determining a third target region range in which the third superconducting material is to retain on the substrate; and

performing etching treatment on the third hard mask and the third superconducting material to obtain a third superconducting material layer formed by covering the third superconducting material in the third target region range with the third hard mask in the third target region range.

7 . The method according to claim 6 , wherein performing etching treatment on the third hard mask and the third superconducting material to obtain a third superconducting material layer formed by covering the third superconducting material in the third target region range with the third hard mask in the third target region range comprises:

etching away a third hard mask of a third other region range in the third hard mask, and a superconducting material of the third other region range in the third superconducting material, respectively, wherein the third other region range is a region range on the substrate in addition to the third target region range.

8 . The method according to claim 6 , wherein after performing etching treatment on the third hard mask and the third superconducting material to obtain a third superconducting material layer formed by covering the third superconducting material in the third target region range with the third hard mask in the third target region range, the method further comprises:

etching away the first hard mask on the first superconducting material layer, the second hard mask on the second superconducting material layer, and the third hard mask on the third superconducting material layer to obtain a second target superconducting device on the substrate.

9 . The method according to claim 1 , wherein the first hard mask is silicon nitride and the second hard mask is silicon nitride.

10 . The method according to claim 9 , wherein the first superconducting material layer is a titanium nitride layer and the second superconducting material is a titanium nitride layer, a thickness of the first superconducting material layer is different from a thickness of the second superconducting material layer.

11 . The method according to claim 2 , wherein

the first hard mask of the first other region range in the first hard mask is etched away in a manner combining photolithography and dry etching; and

the superconducting material of the first other region range in the first superconducting material is etched away in a wet etching manner.

12 . The method according to claim 3 , wherein

the second hard mask of the second other region range in the second hard mask is etched away in a manner combining photolithography and dry etching; and

the superconducting material of the second other region range in the second superconducting material is etched away in a wet etching manner.

13 . The method according to claim 7 , wherein

the third hard mask of the third other region range in the third hard mask is etched away, in a manner combining photolithography and dry etching; and

the superconducting material of the third other region range in the third superconducting material is etched away in a wet etching manner.

14 . The method according to claim 11 , wherein an etching agent used by the wet etching manner is an SC-1 solution.

15 . A quantum device comprising a circuit component formed by multiple superconducting materials, and the multiple superconducting materials are obtained by using a method for preparing multi-superconducting material layers, the method comprising:

depositing a first superconducting material layer on a substrate, the first superconducting material layer being formed by covering a first superconducting material in a first target region range with a first hard mask in the first target region range;

depositing a second superconducting material on the substrate deposited with the first superconducting material layer;

covering the second superconducting material with a second hard mask; and

performing etching treatment on the second hard mask and the second superconducting material to obtain a second superconducting material layer formed by covering the second superconducting material in a second target region range with the second hard mask in the second target region range.

16 . The quantum device according to claim 15 , wherein the quantum device is a Fluxonium quantum bit.

17 . The quantum device according to claim 15 , wherein the first hard mask is silicon nitride and the second hard mask is silicon nitride.

18 . The quantum device according to claim 17 , wherein the first superconducting material layer is a titanium nitride layer and the second superconducting material is a titanium nitride layer, a thickness of the first superconducting material layer is different from a thickness of the second superconducting material layer.

19 . A quantum chip, comprising a quantum device, wherein the quantum device comprises a circuit component formed by multiple superconducting materials, and the multiple superconducting materials are obtained by using a method for preparing multi-superconducting material layers, the method comprising:

depositing a first superconducting material layer on a substrate, the first superconducting material layer being formed by covering a first superconducting material in a first target region range with a first hard mask in the first target region range;

depositing a second superconducting material on the substrate deposited with the first superconducting material layer;

covering the second superconducting material with a second hard mask; and

performing etching treatment on the second hard mask and the second superconducting material to obtain a second superconducting material layer formed by covering the second superconducting material in a second target region range with the second hard mask in the second target region range.

20 . The quantum chip according to claim 19 , wherein the quantum device is a Fluxonium quantum bit.