IP Library Granted Patent US 12,163,938
Granted Patent B2
US 12,163,938 · App. 18/453,137 · Granted Dec 10, 2024

Compact humidity and pressure sensor with temperature control

Inventors: Vivek Saraf (Austin, TX); Vishnu Srinivasan (Austin, TX)
Assignee: Murata Manufacturing Co., Ltd.
G01N33/0031G01K7/20G01L19/0092G01N27/223G01N27/227H01L23/345
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Quick Facts
Patent No.
US 12,163,938
App. No.
18/453,137
Granted
Dec 10, 2024
Kind
B2
Abstract

Novel integrated circuit environmental and temperature sensors in combination with measurement circuitry fully integrated as part of an ASIC die, which may be co-packaged with a pressure sensor integrated circuit to create a compact yet sensitive environment monitoring product. Embodiments may include one or more integrated local heating elements and control circuitry that are power supply independent, make efficient use of battery power, include an accurate in-built temperature detection capability, and provide digital close-loop control of the heating elements.

Claims (42)

1. An integrated circuit die including:

(a) at least one sensor structure formed as part of the integrated circuit die and responsive to a selected environmental characteristic so as to cause a measurable change in electrical capacitance across the sensor structure;

(b) at least one temperature-sensitive sensor formed as part of the integrated circuit die, at least one of the at least one temperature-sensitive sensor including:

(1) a resistance-based temperature-sensitive subcircuit configured to be coupled between a voltage supply and a reference potential, and including a node configured to output a voltage V t that varies as a function of temperature, the resistance-based temperature-sensitive subcircuit including two resistors configured to be coupled in series between the voltage supply and the reference potential, wherein the node is located between the two resistors; and

(2) a sample-and-hold circuit having an input coupled to the node of the resistance-based temperature-sensitive subcircuit and configured to output a signal ΔT indicative of a difference between a first temperature indicated by the voltage V t at a first time and a second temperature indicated by the voltage V t at a subsequent second time; and

(d) processing circuitry, coupled to the at least one sensor structure and the at least one temperature-sensitive sensor, the processing circuitry including:

(1) a capacitance analog-to-digital converter configured to convert a ΔC analog signal to a corresponding ΔC digital signal;

(2) a temperature analog-to-digital converter configured to convert a received analog signal to a corresponding ΔT digital signal; and

(3) a digital signal processor, coupled to the capacitance analog-to-digital converter and to the temperature analog-to-digital converter.

2. The integrated circuit die of claim 1 , further including at least one heating element positioned sufficiently close to an associated one sensor structure to enable localized heating near the associated one sensor structure.

3. The integrated circuit die of claim 1 , further including a pressure sensor die mounted on the surface layer of the integrated circuit die.

4. The integrated circuit die of claim 1 , further including at least one environmental sensor for sensing one or more gases and/or one or more vapors, the at least one environmental sensor combined with and coupled to the at least one capacitor structure in a common circuit structure.

5. The integrated circuit die of claim 1 , wherein the sensor structure includes an environmentally sensitive dielectric material that is responsive to humidity.

6. The integrated circuit die of claim 1 , wherein the sensor structure includes an environmentally sensitive dielectric material that is responsive to a selected biological or chemical molecule.

7. An integrated circuit die including:

(a) at least one capacitor structure formed as part of a surface layer of the integrated circuit die, each capacitor structure including an environmentally sensitive material as a dielectric, the environmentally sensitive material being responsive to a selected environmental characteristic so as to cause a measurable change in electrical capacitance and/or charge across the capacitor structure;

(b) at least one heating element positioned sufficiently close to an associated one capacitor structure of the at least one capacitor structure to enable localized heating near the associated one capacitor structure;

(c) at least one temperature-sensitive sensor formed as part of the surface layer of the integrated circuit die, at least one of the at least one temperature-sensitive sensor including:

(1) a resistance-based temperature-sensitive subcircuit configured to be coupled between a voltage supply and a reference potential, and a node configured to output a voltage V t that varies as a function of temperature, the resistance-based temperature-sensitive subcircuit including two resistors configured to be coupled in series between the voltage supply and the reference potential, wherein the node is located between the two resistors; and

(2) a sample-and-hold circuit having an input coupled to the node of the resistance-based temperature-sensitive subcircuit and configured to output a signal ΔT indicative of a difference between a first temperature indicated by the voltage V t at a first time and a second temperature indicated by the voltage V t at a subsequent second time; and

(d) processing circuitry, coupled to the at least one capacitor structure and the at least one resistance-based temperature-sensitive sensor, the processing circuitry including:

(1) a capacitance analog-to-digital converter configured to convert a ΔC analog signal to a corresponding ΔC digital signal;

(2) a temperature analog-to-digital converter configured to convert a received analog signal to a corresponding ΔT digital signal; and

(3) a digital signal processor, coupled to the capacitance analog-to-digital converter and to the temperature analog-to-digital converter.

8. The integrated circuit die of claim 7 , further including a pressure sensor die mounted on the surface layer of the integrated circuit die.

9. The integrated circuit die of claim 7 , further including at least one environmental sensor for sensing one or more gases and/or one or more vapors, the at least one environmental sensor combined with and coupled to the at least one capacitor structure in a common circuit structure.

10. The integrated circuit die of claim 7 , wherein the sensor structure includes an environmentally sensitive dielectric material that is responsive to humidity.

11. The integrated circuit die of claim 7 , wherein the sensor structure includes an environmentally sensitive dielectric material that is responsive to a selected biological or chemical molecule.

12. An integrated circuit die including:

(a) a surface layer;

(b) at least one capacitive sensor structure formed as part of the surface layer, each capacitive sensor structure including an environmentally sensitive dielectric material responsive to a selected environmental characteristic so as to cause a measurable change in electrical capacitance across the capacitive sensor structure;

(c) at least one temperature-sensitive sensor formed as part of the integrated circuit die, at least one of the at least one temperature-sensitive sensor including:

(1) a resistance-based temperature-sensitive subcircuit configured to be coupled between a voltage supply and a reference potential, and including a node configured to output a voltage V t that varies as a function of temperature, the resistance-based temperature-sensitive subcircuit including two resistors configured to be coupled in series between the voltage supply and the reference potential, wherein the node is located between the two resistors; and

(2) a sample-and-hold circuit having an input coupled to the node of the resistance-based temperature-sensitive subcircuit and configured to output a signal ΔT indicative of a difference between a first temperature indicated by the voltage V t at a first time and a second temperature indicated by the voltage V t at a subsequent second time; and

(d) a capacitance analog-to-digital converter configured to convert a ΔC analog signal to a corresponding ΔC digital signal;

(e) a temperature analog-to-digital converter configured to convert a received analog signal to a corresponding ΔT digital signal; and

(f) a digital signal processor, coupled to the capacitance analog-to-digital converter and to the temperature analog-to-digital converter.

13. The integrated circuit die of claim 12 , further including a pressure sensor die mounted on the surface layer of the integrated circuit die.

14. The integrated circuit die of claim 12 , further including at least one environmental sensor for sensing one or more gases and/or one or more vapors, the at least one environmental sensor combined with and coupled to the at least one capacitor structure in a common circuit structure.

15. The integrated circuit die of claim 12 , wherein the environmentally sensitive dielectric material is responsive to humidity.

16. The integrated circuit die of claim 12 , wherein the environmentally sensitive dielectric material is responsive to a selected biological or chemical molecule.

17. The integrated circuit die of claim 12 , further including at least one heating element positioned sufficiently close to an associated one capacitive sensor structure to enable localized heating near the associated one capacitive sensor structure.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2024
From: PSEMI CORPORATION
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 067924/0450 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 24, 2023
From: SARAF, VIVEK; SRINIVASAN, VISHNU
To: PSEMI CORPORATION
Reel/Frame 065328/0036 →
Continuity (3)
Continuation 17195027 · Mar 8, 2021
Provisional Application 62987245 · Mar 9, 2020
Related Publication 20240044857A1 · Feb 8, 2024