Method for manufacturing photovoltaic module and photovoltaic module
View Patent ↗Embodiments of the disclosure provide a method for manufacturing a photovoltaic module and a photovoltaic module. The method includes the following: providing a plurality of cells; selecting at least one cell from the plurality of cells, and for each respective cell of the at least one cell, forming a corresponding solder layer on each respective solder pad of at least one solder pad of the respective cell; and performing a soldering treatment on the respective connecting member and the at least one solder pad and/or the at least one solder layer to connect the respective pair of adjacent cells, wherein the soldering treatment has a heating temperature in a range of 200° C. to 300° C.
1. A photovoltaic module, comprising a first cover plate, a first encapsulation film, at least one cell string, a second encapsulation film, and a second cover plate, which are stacked in sequence; wherein
each cell string of the at least one cell string includes a plurality of cells and a plurality of connecting members;
each cell of the plurality of cells has a plurality of solder pads, the plurality of solder pads including a metal, and for each respective cell of at least one cell of the plurality of cells, a corresponding solder layer is formed on each respective solder pad of at least one solder pad of the each respective cell, wherein the corresponding solder layer includes a first alloy layer adjacent to the each respective solder pad and a second alloy layer on a surface of the first alloy layer away from the each respective solder pad, the first alloy layer including a first alloy formed of tin and the metal; and
each respective connecting member of the plurality of connecting members is disposed on at least one solder pad and/or at least one solder layer of each cell of a respective pair of adjacent cells.
2. The photovoltaic module of claim 1 , wherein the each respective cell includes main bus bars, finger electrodes, and insulating glue spots that are formed on a surface of the each respective cell, and each insulating glue dot is used for isolating a corresponding main bus bar and a corresponding finger electrode that have different polarities; and
the corresponding solder layer has a thickness in a range of 0.5 times to 1.5 times a thickness of an adjacent insulating glue dot in a direction perpendicular to the surface of the each respective cell.
3. The photovoltaic module of claim 1 , wherein the corresponding solder layer has a thickness in a range of 50 μm to 300 μm in a direction perpendicular to a surface of the each respective cell.
4. The photovoltaic module of claim 1 , wherein the second alloy layer includes at least one of a tin-lead alloy, a tin-silver alloy, a tin-copper alloy, a tin-lead-silver alloy, and a tin-bismuth alloy.
5. The photovoltaic module of claim 1 , wherein the first alloy layer includes a silver-tin alloy layer, a copper-tin alloy layer, or a gold-tin alloy layer.
6. The photovoltaic module of claim 1 , wherein the first alloy layer has a thickness in a range of 5 μm to 30 μm in a direction perpendicular to a surface of the each respective cell.
7. The photovoltaic module of claim 1 , wherein the second alloy layer is a tin-lead alloy layer, and a mass ratio of tin to lead in the tin-lead alloy layer is in a range of 0.25 to 1.
8. The photovoltaic module of claim 1 , wherein an area of an orthographic projection of the each respective solder pad on a surface of the each respective cell is a first area, an area of an orthographic projection of the corresponding solder layer on the surface of the each respective cell is a second area, and a ratio of the second area to the first area is in a range of 0.25 to 0.6.
9. The photovoltaic module of claim 1 , wherein an area of an orthographic projection of the corresponding solder layer on a surface of the each respective cell is in a range of 15 square millimeters to 40 square millimeters.
10. The photovoltaic module of claim 1 , wherein each connecting member includes a conductive core and a wrapping layer covering the conductive core, and the wrapping layer has a thickness in a range of 5 μm to 10 μm in a direction perpendicular to a surface where the conductive core is in contact with the wrapping layer.