Granted Patent B2

US 12,575,460 · App. 18/459,440 · Granted Mar 10, 2026

Inventors: Atsushi Ono (Nagaokakyo, JP); Masanori Kishimoto (Nagaokakyo, JP); Yoshiaki Sukemori (Nagaokakyo, JP); Yoshiki Kogushi (Nagaokakyo, JP); Kenichi Shimamoto (Nagaokakyo, JP); Hisanori Namie (Nagaokakyo, JP)

Assignee: MURATA MANUFACTURING CO., LTD.

H01L25/18H01L23/481H01L23/5384H01L24/05H01L24/08H01L24/13H01L24/16H01L2224/0557H01L2224/08238H01L2224/13025H01L2224/16227H01L2924/10253H01L2924/10329

Abstract

Claims (50)

1 . A high frequency module, comprising:

a mounting substrate that has a first main surface and a second main surface that are opposite to each other;

a power amplifier and a switch that are disposed on the second main surface of the mounting substrate;

a plurality of external connection terminals that are disposed on the second main surface of the mounting substrate; and

a connector that is able to be connected to an external substrate,

wherein the plurality of external connection terminals include a first external connection terminal connected to the connector, and

wherein the first external connection terminal is disposed between the power amplifier and the switch.

2 . The high frequency module according to claim 1 ,

wherein the power amplifier is disposed on the second main surface of the mounting substrate with a first metal member interposed therebetween, and

wherein the first external connection terminal is disposed between the first metal member and the switch.

3 . The high frequency module according to claim 2 , further comprising a conductive path that is provided at the mounting substrate and allows connection between the first external connection terminal and the first metal member.

4 . The high frequency module according to claim 1 , wherein the power amplifier and the switch are arranged next to each other.

5 . The high frequency module according to claim 1 ,

wherein the first external connection terminal includes a plurality of first external connection terminals, and

wherein the plurality of first external connection terminals are arranged in a direction that intersects a direction in which the power amplifier and the switch are arranged, in plan view from a thickness direction of the mounting substrate.

6 . The high frequency module according to claim 1 , further comprising:

a wiring layer that has a third main surface and a fourth main surface that are opposite to each other, the third main surface being between the second main surface of the mounting substrate and the fourth main surface,

wherein the first external connection terminal is disposed between the second main surface of the mounting substrate and the third main surface of the wiring layer, and

wherein the connector is disposed on the fourth main surface of the wiring layer.

7 . The high frequency module according to claim 1 , further comprising a second metal member that is disposed between the power amplifier and the connector,

wherein the second metal member is connected to the connector.

8 . The high frequency module according to claim 1 , further comprising an output matching circuit that is connected to an output part of the power amplifier,

wherein the output matching circuit is disposed inside the mounting substrate, the output matching circuit and the power amplifier overlap in plan view from a thickness direction of the mounting substrate, and the output matching circuit is disposed closer to the second main surface than to the first main surface inside the mounting substrate.

9 . The high frequency module according to claim 1 , further comprising a transformer that is connected to an output part of the power amplifier,

wherein the transformer is disposed inside the mounting substrate, the transformer and the power amplifier overlap in plan view from a thickness direction of the mounting substrate, and the transformer is disposed closer to the second main surface than to the first main surface inside the mounting substrate.

10 . The high frequency module according to claim 1 , wherein the switch is connected to a reception path through which a reception signal passes.

11 . The high frequency module according to claim 1 , wherein the first external connection terminal is connected to a ground.

12 . The high frequency module according to claim 11 ,

wherein the plurality of external connection terminals further include a plurality of second external connection terminals that are connected to the connector, and

wherein the plurality of second external connection terminals are disposed on both sides of each of the power amplifier and the switch, in plan view from a thickness direction of the mounting substrate.

13 . The high frequency module according to claim 12 ,

wherein the power amplifier includes a plurality of power amplifiers, and

wherein the plurality of second external connection terminals are disposed near each of the plurality of power amplifiers, in plan view from the thickness direction of the mounting substrate.

14 . The high frequency module according to claim 10 ,

wherein the plurality of external connection terminals further include a plurality of third external connection terminals that are connected to the connector,

wherein the high frequency module further comprises a low noise amplifier that is disposed on the second main surface of the mounting substrate, and

wherein the plurality of third external connection terminals are disposed on both sides of the low noise amplifier, in plan view from a thickness direction of the mounting substrate.

15 . A communication apparatus, comprising:

a high frequency module including

a mounting substrate that has a first main surface and a second main surface that are opposite to each other;

a power amplifier and a switch that are disposed on the second main surface of the mounting substrate;

a plurality of external connection terminals that are disposed on the second main surface of the mounting substrate; and

a connector that is able to be connected to an external substrate,

wherein the plurality of external connection terminals include a first external connection terminal connected to the connector, and

wherein the first external connection terminal is disposed between the power amplifier and the switch; and

a signal processing circuit that processes a high frequency signal passing through the high frequency module.

16 . The high frequency module according to claim 11 ,

wherein the plurality of external connection terminals further include a plurality of third external connection terminals that are connected to the connector,

wherein the high frequency module further comprises a low noise amplifier that is disposed on the second main surface of the mounting substrate, and

wherein the plurality of third external connection terminals are disposed on both sides of the low noise amplifier, in plan view from a thickness direction of the mounting substrate.

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (24)