Image sensor and manufacturing method thereof
Disclosed is an image sensor which includes a substrate including an active region that includes a plurality of photoelectric conversion pixels and a peripheral region that extends around the active region, a transparent window on the substrate, a wall structure that is on the peripheral region along a periphery of the substrate and seals a space between the substrate and the transparent window, a planarization insulting layer on the active region and a portion of the peripheral region of the substrate, and a plurality of lens patterns on the planarization insulating layer. The planarization insulting layer includes first to third lens regions, and the lens patterns have different shapes and/or are arranged at different intervals on the first to third lens regions.
1 . An image sensor comprising:
a substrate including an active region that includes a plurality of photoelectric conversion pixels and a peripheral region that extends around the active region;
a transparent window on the substrate;
a wall structure that is on the peripheral region along a periphery of the substrate and seals a space between the substrate and the transparent window;
a planarization insulating layer on the active region and a portion of the peripheral region of the substrate; and
a plurality of lens patterns on the planarization insulating layer,
wherein the planarization insulating layer includes first, second and third lens regions, and the plurality of lens patterns have different shapes and/or are arranged at different intervals on the first, second and third lens regions.
2 . The image sensor of claim 1 , wherein the first lens region overlaps the active region, and
the second lens region and the third lens region overlap the peripheral region and are sequentially arranged in an outward direction from the active region.
3 . The image sensor of claim 2 , wherein the peripheral region is free of any photoelectric conversion pixel.
4 . The image sensor of claim 2 , wherein the plurality of lens patterns include micro-lenses, dummy micro-lenses, and a micro-lens bar, and
the micro-lenses are on the first lens region, the dummy micro-lenses are on the second lens region, and the micro-lens bar is on the third lens region.
5 . The image sensor of claim 4 , wherein the dummy micro-lenses do not overlap any photoelectric conversion pixel.
6 . The image sensor of claim 4 , wherein the micro-lens bar includes two or more micro-lens bars, and the two or more micro-lens bars are sequentially arranged in the outward direction from the active region.
7 . The image sensor of claim 6 , wherein a center to center distance between two adjacent micro-lenses is a first distance, a center to center distance between two adjacent dummy micro-lenses is a second distance, a center to center distance between two adjacent micro-lens bars is a third distance, and
the third distance is greater than the first distance and/or the second distance.
8 . The image sensor of claim 7 , wherein the second distance is greater than the first distance.
9 . The image sensor of claim 6 , wherein the dummy micro-lenses are arranged in a zigzag pattern along a direction.
10 . The image sensor of claim 6 , wherein a first pair of dummy micro-lenses adjacent to each other in a first direction is spaced apart from each other by a first distance in the first direction, and a second pair of dummy micro-lenses adjacent to each other in a second direction that is different from the first direction is spaced apart from each other by a second distance in the second direction, and
the second distance is different from the first distance.
11 . The image sensor of claim 4 , wherein the micro-lens bar completely encloses the active region in a plan view.
12 . The image sensor of claim 4 , wherein the micro-lens bar, the micro-lenses, and the dummy micro-lenses include the same material.
13 . The image sensor of claim 1 , wherein the planarization insulating layer is spaced apart from the wall structure in a plan view.
14 . The image sensor of claim 1 , further comprising:
a pad on the peripheral region of the substrate; and
a through-VIA in the substrate.
15 . A method for manufacturing an image sensor, the method comprising:
forming a plurality of photoelectric conversion pixels and a pad on a substrate;
forming a planarization insulating layer on the substrate;
forming a first mask on the planarization insulating layer;
forming micro-lenses, dummy micro-lenses, and a micro-lens bar by patterning the planarization insulating layer using the first mask and then reflowing the planarization insulating layer;
forming a second mask on the planarization insulating layer;
removing a portion of the planarization insulating layer along a periphery of the substrate by patterning the planarization insulating layer using the second mask; and
forming a wall structure that is spaced apart from the planarization insulating layer along the periphery of the substrate.
16 . The method of claim 15 , further comprising:
forming a cover layer on the substrate and the pad; and
patterning the cover layer to form an opening therein before the forming of the wall structure, wherein the opening exposes an upper surface of the pad.
17 . The method of claim 15 , wherein the dummy micro-lenses do not overlap any photoelectric conversion pixel.
18 . The method of claim 17 , wherein the dummy micro-lenses are arranged in a zigzag pattern along a direction.
19 . The method of claim 17 , wherein a center to center distance between two adjacent micro-lenses is a first distance, a center to center distance between two adjacent dummy micro-lenses is a second distance, a center to center distance between two adjacent micro-lens bars is a third distance, and
the third distance is greater than the first distance and/or the second distance.
20 . The method of claim 15 , wherein the micro-lens bar completely encloses a portion of the substrate in a plan view.