Semiconductor device having switching elements with two different current capacities
In a semiconductor device, a plurality of first switching element chips and a plurality of first diode chips constituting a first inverter circuit, and a plurality of second switching element chips and a plurality of second diode chips constituting a second inverter circuit are mounted on a printed wiring board incorporated into a package. At this point, a current capacity of each of the plurality of second switching element chips is greater than a current capacity of each of the plurality of first switching element chips, and a current capacity of each of the plurality of second diode chips is greater than a current capacity of each of the plurality of first diode chips.
1 . A semiconductor device comprising:
a package;
a printed wiring board incorporated into the package;
a plurality of first switching element chips mounted on the printed wiring board to constitute a first inverter circuit;
a plurality of first diode chips mounted on the printed wiring board and individually corresponding to the plurality of first switching element chips, each of the plurality of first diode chips being electrically connected in anti-parallel to a corresponding one of the plurality of first switching element chips;
a plurality of second switching element chips mounted on the printed wiring board to constitute a second inverter circuit; and
a plurality of second diode chips mounted on the printed wiring board and individually corresponding to the plurality of second switching element chips, each of the plurality of second diode chips being electrically connected in anti-parallel to a corresponding one of the second switching element chips,
wherein a current capacity of each of the plurality of second switching element chips is greater than a current capacity of each of the plurality of first switching element chips, and
a current capacity of each of the plurality of second diode chips is greater than a current capacity of each of the plurality of first diode chips,
the semiconductor device further comprising:
a high potential-side DC input terminal fixed to the package and commonly used for the first inverter circuit and the second inverter circuit;
a low potential-side DC input terminal fixed to the package and commonly used for the first inverter circuit and the second inverter circuit;
a plurality of first AC output terminals fixed to the package to output a single-phase or multi-phase AC voltage from the first inverter circuit;
a plurality of second AC output terminals fixed to the package to output a single-phase or multi-phase AC voltage from the second inverter circuit;
a plurality of first control terminals fixed to the package and individually connected to control electrodes of the plurality of first switching element chips; and
a plurality of second control terminals fixed to the package and individually connected to control electrodes of the plurality of second switching element chips,
wherein the package has a quadrangular shape in planar view,
the plurality of first AC output terminals and the plurality of first control terminals are disposed along a first side of the quadrangular shape in planar view,
the plurality of second AC output terminals and the plurality of second control terminals are disposed along a second side adjacent to the first side of the quadrangular shape in planar view, and
the high potential-side DC input terminal and the low potential-side DC input terminal are disposed along a third side of the quadrangular shape opposite to the second side.
2 . The semiconductor device according to claim 1 , wherein
a chip area of each of the plurality of second switching element chips is twice as large or more than a chip area of each of the plurality of first switching element chips, and
a chip area of each of the plurality of second diode chips is twice as large or more than a chip area of each of the plurality of first diode chips.
3 . The semiconductor device according to claim 1 ,
wherein a number of terminals for outputting mutually equal AC voltages provided in the second AC output terminals is greater than a number of terminals for outputting mutually equal AC voltages provided in the first AC output terminals.
4 . The semiconductor device according to claim 1 , further comprising:
a plurality of third diode chips mounted on the printed wiring board to constitute a full-wave rectifier circuit;
a plurality of AC input terminals fixed to the package to input an AC voltage to the full-wave rectifier circuit; and
a high potential-side DC output terminal and a low potential-side DC output terminal fixed to the package to output a DC voltage from the full-wave rectifier circuit,
wherein the high potential-side DC output terminal and the low potential-side DC output terminal are disposed along the third side, and
the plurality of AC input terminals are disposed along a fourth side of the quadrangular shape opposite to the first side.
5 . The semiconductor device according to claim 1 , further comprising a plurality of third diode chips mounted on the printed wiring board and constitute a full-wave rectifier circuit.