POWER DEVICE CELL AND POWER ELECTRONICS ASSEMBLY INCLUDING THE POWER DEVICE CELL
A power device cell includes: a metallic body having a first main surface, a second main surface opposite the first main surface, and a side face vertically extending between the first and second main surfaces; a vertical power semiconductor die in a recess formed in the first main surface of the metallic body; and an organic and/or glass electrical insulator covering the second main surface of the metallic body such that the power device cell is electrically insulated at least at a first side that includes the organic and/or glass electrical insulator. The organic and/or glass electrical insulator is confined to the metallic body. A backside of the vertical power semiconductor die is configured to be at a different electric potential than a frontside of the vertical power semiconductor die. The metallic body is at the same electric potential as the backside of the vertical power semiconductor die.
1 . A power device cell, comprising:
a metallic body having a first main surface, a second main surface opposite the first main surface, and a side face vertically extending between the first main surface and the second main surface;
a vertical power semiconductor die in a recess formed in the first main surface of the metallic body; and
an organic and/or glass electrical insulator covering the second main surface of the metallic body such that the power device cell is electrically insulated at least at a first side that includes the organic and/or glass electrical insulator,
wherein the organic and/or glass electrical insulator is confined to the metallic body,
wherein a backside of the vertical power semiconductor die is configured to be at a different electric potential than a frontside of the vertical power semiconductor die,
wherein the metallic body is at the same electric potential as the backside of the vertical power semiconductor die.
2 . The power device cell of claim 1 , wherein the organic and/or glass electrical insulator is part of a foil or tape applied to the second main surface of the metallic body.
3 . The power device cell of claim 1 , wherein the organic and/or glass electrical insulator is a resist, glue or wax that coats the second main surface of the metallic body.
4 . The power device cell of claim 1 , wherein the organic and/or glass electrical insulator comprises plastic.
5 . The power device cell of claim 1 , wherein the organic and/or glass electrical insulator is a glass cloth.
6 . The power device cell of claim 5 , wherein the glass cloth is part of a layer stack that also includes an aluminum foil interposed between the glass cloth and the second main surface of the metallic body, an adhesive applied to a side of the glass cloth that faces away from the aluminum foil, and a liner applied to a side of the adhesive that faces away from the glass cloth.
7 . The power device cell of claim 1 , wherein the organic and/or glass electrical insulator has the same area as the second main surface of the metallic body.
8 . The power device cell of claim 1 , wherein the organic and/or glass electrical insulator extends onto the side face of the metallic body.
9 . The power device cell of claim 8 , wherein the organic and/or glass electrical insulator further extends onto the first main surface of the metallic body.
10 . The power device cell of claim 1 , wherein the organic and/or glass electrical insulator has a thickness in a range of 5 mm to 0.01 mm.
11 . The power device cell of claim 10 , wherein the thickness of the organic and/or glass electrical insulator is in a range of 2 mm to 0.05 mm.
12 . The power device cell of claim 1 , wherein the power device cell has a thickness tolerance of +/−100 microns, including the organic and/or glass electrical insulator.
13 . The power device cell of claim 1 , further comprising a metallic layer covering a side of the organic and/or glass electrical insulator that faces away from the metallic body.
14 . A power electronics assembly, comprising:
a printed circuit board; and
a power device cell embedded in the printed circuit board,
wherein the power device cell comprises:
a metallic body having a first main surface, a second main surface opposite the first main surface, and a side face vertically extending between the first main surface and the second main surface;
a vertical power semiconductor die in a recess formed in the first main surface of the metallic body; and
an organic and/or glass electrical insulator covering the second main surface of the metallic body such that the power device cell is electrically insulated at least at a first side that includes the organic and/or glass electrical insulator,
wherein the organic and/or glass electrical insulator is confined to the metallic body,
wherein a backside of the vertical power semiconductor die is configured to be at a different electric potential than a frontside of the vertical power semiconductor die,
wherein the metallic body is at the same electric potential as the backside of the vertical power semiconductor die.
15 . The power electronics assembly of claim 14 , wherein the power device cell further comprises a metallic layer covering a side of the organic and/or glass electrical insulator that faces away from the metallic body, and wherein the metallic layer of the power device cell is attached to a metallic layer of the printed circuit board.
16 . The power electronics assembly of claim 14 , wherein a laminated structure of the printed circuit board covers the organic and/or glass electrical insulator of the power device cell, and wherein the laminated structure of the printed circuit board comprises one or more electrically conductive layers and one or more electrically insulating layers.
17 . A power electronics assembly, comprising:
a metallic frame; and
a power device cell mounted to the metallic frame,
wherein the power device cell comprises:
a metallic body having a first main surface, a second main surface opposite the first main surface, and a side face vertically extending between the first main surface and the second main surface;
a vertical power semiconductor die in a recess formed in the first main surface of the metallic body; and
an organic and/or glass electrical insulator covering the second main surface of the metallic body such that the power device cell is electrically insulated at least at a first side that includes the organic and/or glass electrical insulator,
wherein the organic and/or glass electrical insulator is confined to the metallic body,
wherein a backside of the vertical power semiconductor die is configured to be at a different electric potential than a frontside of the vertical power semiconductor die,
wherein the metallic body is at the same electric potential as the backside of the vertical power semiconductor die.
18 . The power electronics assembly of claim 17 , wherein the power device cell further comprises a metallic layer covering a side of the organic and/or glass electrical insulator that faces away from the metallic body, and wherein the metallic layer of the power device cell is attached to the metallic frame.