SINGLE PHOTON AVALANCHE DIODE, ELECTRONIC DEVICE, AND LIDAR DEVICE
Disclosed is a single-photon avalanche diode comprises a heavily doped region, a first lightly doped region covering the heavily doped region, a guard ring provided on a side surface of the first lightly doped region, a first well covering the first lightly doped region and the guard ring, and a contact electrically connected to the first well. The heavily doped region, the first lightly doped region, and the guard ring have a first conductivity type. The first well and the contact have a second conductivity type.
1 . A single-photon avalanche diode comprising:
a heavily doped region;
a first lightly doped region covering the heavily doped region;
a guard ring provided on a side surface of the first lightly doped region;
a first well covering the first lightly doped region and the guard ring; and
a contact electrically connected to the first well;
wherein the heavily doped region, the first lightly doped region, and the guard ring have a first conductivity type,
wherein the first well and the contact have a second conductivity type.
2 . The single-photon avalanche diode of claim 1 , further comprising:
a relief area provided between the first well and the contact;
wherein the relief region has the second conductivity type and has a lower doping concentration than the contact.
3 . The single-photon avalanche diode of claim 1 , further comprising:
a polysilicon pattern provided on the guard ring.
4 . The single-photon avalanche diode of claim 1 , further comprising:
a second lightly doped region provided on the first lightly doped region; and
a second well provided between the second lightly doped region and the first well,
wherein the second lightly doped region and the second well have the second conductivity type.
5 . The single-photon avalanche diode of claim 4 , wherein the guard ring protrudes from a top surface of the second well.
6 . A single-photon avalanche diode comprising:
a heavily doped region;
a first lightly doped region covering the heavily doped region;
a guard ring provided on a side surface of the first lightly doped region;
a first well covering the first lightly doped region and the guard ring; and
a contact electrically connected to the first well;
wherein the heavily doped region and the guard ring have a first conductivity type,
wherein the first lightly doped region, the first well, and the contact have a second conductivity type.
7 . The single-photon avalanche diode of claim 6 , further comprising:
a second well provided on the first lightly doped region,
wherein the second well has the second conductivity type.
8 . The single-photon avalanche diode of claim 7 , wherein a top surface of the second well is disposed higher than a top surface of the guard ring.
9 . The single-photon avalanche diode of claim 6 , further comprising:
a relief region provided between the first well and the contact,
wherein the relief region has the second conductivity type and has a lower doping concentration than the contact.
10 . The single-photon avalanche diode of claim 6 , further comprising:
a polysilicon pattern provided on the guard ring.
11 . A electronic device comprising:
a single-photon avalanche diode including a heavily doped region, a first lightly doped region covering the heavily doped region, a guard ring provided on a side surface of the first lightly doped region, a first well covering the first lightly doped region and the guard ring, and a contact electrically connected to the first well,
wherein the heavily doped region, the first lightly doped region, and the guard ring have a first conductivity type,
wherein the first well and the contact have a second conductivity type.
12 . A LiDAR device comprising:
an electronic device including a single-photon avalanche diode,
wherein the single-photon avalanche diode includes a heavily doped region, a first lightly doped region covering the heavily doped region, a guard ring provided on a side surface of the first lightly doped region, a first well covering the first lightly doped region and the guard ring, and a contact electrically connected to the first well,
wherein the heavily doped region, the first lightly doped region, and the guard ring have a first conductivity type,
wherein the first well and the contact have a second conductivity type.