Solidly-mounted transversely-excited bulk acoustic resonator split ladder filter
Filter devices. A first chip includes a first base, a first piezoelectric membrane having a first thickness, and a first acoustic Bragg reflector sandwiched between the first piezoelectric membrane and the first base. A first interdigital transducer (IDT) of a first solidly-mounted membrane resonator is formed on a surface of the first piezoelectric membrane. A second chip includes a second base, a second piezoelectric membrane having a second thickness less than the first thickness, and a second acoustic Bragg reflector sandwiched between the second piezoelectric membrane and the second base. A second IDT of a second solidly-mounted membrane resonator is formed on a surface of the second piezoelectric membrane. A circuit card is coupled to the first chip and the second chip, the circuit card including at least one conductor for making an electrical connection between the first IDT and the second IDT.
1 . A filter device, comprising:
a first chip comprising:
a first interdigital transducer (IDT) of a first solidly-mounted resonator on a surface of a first piezoelectric layer,
a first acoustic reflector sandwiched between the first piezoelectric layer and a first base, and
a first dielectric layer having a first thickness on the surface of the first piezoelectric layer;
a second chip comprising:
a second IDT of a second solidly-mounted resonator on a surface of a second piezoelectric layer,
a second acoustic reflector sandwiched between the second piezoelectric layer and a second base, and
a second dielectric layer having a second thickness on the surface of the second piezoelectric layer, wherein the second thickness of the second dielectric layer is different from the first thickness of the first dielectric layer; and
an electrical connection between the first IDT and the second IDT.
2 . The filter device of claim 1 , wherein at least one of the first piezoelectric layer and the second piezoelectric layer are respectively a single-crystal piezoelectric material.
3 . The filter device of claim 1 , wherein a thickness of interleaved fingers of the first IDT is different from a thickness of interleaved fingers of the second IDT.
4 . The filter device of claim 1 , wherein the first piezoelectric layer has a first thickness and the second piezoelectric layer has a second thickness different from the first thickness.
5 . The filter device of claim 1 , wherein the first and second acoustic reflectors each comprise alternating low acoustic impedance and high acoustic impedance layers respectively.
6 . The filter device of claim 5 , wherein the first acoustic reflector and the second acoustic reflector differ in one or more of: a number of layers, a thickness of one or more layers, an ordered sequence of the high and low acoustic impedance layers, a material of the high acoustic impedance layers, and a material of the low acoustic impedance layers.
7 . The filter device of claim 1 , wherein the first chip, the second chip, and the electrical connection collectively form components of a ladder filter circuit.
8 . The filter device of claim 7 , wherein the electrical connection is one of one or more electrical connections and wherein an inductance of one or more of the electrical connections lowers a frequency of a shunt resonator in the ladder filter circuit.
9 . The filter device of claim 7 , wherein:
the first solidly-mounted resonator is a shunt resonator in the ladder filter circuit, and
the second solidly-mounted resonator is a series resonator in the ladder filter circuit.
10 . The filter device of claim 9 , wherein:
the first chip comprises one or more additional shunt resonators of the ladder filter circuit, and
the second chip comprises one or more additional series resonators of the ladder filter circuit.
11 . The filter device of claim 1 , wherein the first dielectric layer is disposed over and between interleaved fingers of the first IDT and the second dielectric layer is disposed over and between interleaved fingers of the second IDT.
12 . The filter device of claim 1 , wherein at least one of the first and second solidly-mounted resonators is a solidly-mounted transversely-excited film bulk acoustic resonator.
13 . The filter device of claim 1 , wherein a pitch between adjacent fingers of the first IDT is different than the pitch between adjacent fingers of the second IDT.
14 . The filter device of claim 1 , wherein a first ordered sequence of the first chip is different from a second ordered sequence of the second chip.
15 . The filter device of claim 1 , wherein an orientation of a crystalline axes of the first piezoelectric layer is different from an orientation of a crystalline axes of the second piezoelectric layer.
16 . The filter device of claim 1 , wherein the first solidly-mounted resonator is part of a transmit filter and the second solidly-mounted resonator is part of a receive filter.
17 . The filter device of claim 1 , wherein the first solidly-mounted resonator and the second solidly-mounted resonator are components of a transmit filter, and wherein the second chip further comprises a receive filter.
18 . The filter device of claim 1 , wherein the first solidly-mounted resonator and the second solidly-mounted resonator are components of a receive filter, and wherein the second chip further comprises a transmit filter.
19 . The filter device of claim 1 , further comprising a circuit card interconnecting the first chip and the second chip, and wherein the circuit card comprises the electrical connection between the first chip and the second chip.
20 . A filter device, comprising:
a first chip comprising:
a first interdigital transducer (IDT) of a first resonator on a surface of a first piezoelectric layer, wherein the first resonator is a first type of resonator comprising a solidly-mounted resonator, and
an acoustic reflector sandwiched between the first piezoelectric layer and a first base;
a second chip comprising:
a second IDT of a second resonator on a surface of a second piezoelectric layer, wherein the second resonator is a second type of resonator different from the first type; and
a circuit card interconnecting the first chip and the second chip, wherein the circuit card includes an electrical connection between the first IDT of the first chip and the second IDT of the second chip.
21 . The filter device of claim 20 , wherein at least one of the first piezoelectric layer and the second piezoelectric layer are respectively a single-crystal piezoelectric material.
22 . The filter device of claim 20 , wherein a thickness of interleaved fingers of the first IDT is different from a thickness of interleaved fingers of the second IDT.
23 . The filter device of claim 20 , wherein the first piezoelectric layer has a first thickness and the second piezoelectric layer has a second thickness different from the first thickness.
24 . The filter device of claim 20 , wherein the acoustic reflector comprises alternating low acoustic impedance and high acoustic impedance layers.
25 . The filter device of claim 20 , wherein the first resonator comprises a transversely excited solidly-mounted resonator and the second resonator comprises a floating-diaphragm transversely excited resonator.
26 . The filter device of claim 20 , wherein the first chip, the second chip, and the electrical connection collectively form components of a ladder filter circuit.
27 . The filter device of claim 26 , wherein the electrical connection is one of one or more electrical connections and wherein an inductance of one or more of the electrical connections lowers a frequency of a shunt resonator in the ladder filter circuit.
28 . The filter device of claim 26 , wherein:
the first resonator is a shunt resonator in the ladder filter circuit, and
the second resonator is a series resonator in the ladder filter circuit.
29 . The filter device of claim 28 , wherein:
the first chip comprises one or more additional shunt resonators of the ladder filter circuit, and
the second chip comprises one or more additional series resonators of the ladder filter circuit.
30 . The filter device of claim 20 , further comprising a first dielectric layer having a first thickness on the surface of the first piezoelectric layer and a second dielectric layer having a second thickness on the surface of the second piezoelectric layer, wherein the second thickness of the second dielectric layer is different from the first thickness of the first dielectric layer.
31 . The filter device of claim 30 , wherein the first dielectric layer is disposed over and between interleaved fingers of the first IDT and the second dielectric layer is disposed over and between interleaved fingers of the second IDT.
32 . The filter device of claim 20 , wherein a pitch between adjacent fingers of the first IDT is different than the pitch between adjacent fingers of the second IDT.
33 . The filter device of claim 20 , wherein a first ordered sequence of the first chip is different from a second ordered sequence of the second chip.
34 . The filter device of claim 20 , wherein an orientation of a crystalline axes of the first piezoelectric layer is different from an orientation of a crystalline axes of the second piezoelectric layer.
35 . The filter device of claim 20 , wherein the first resonator is part of a transmit filter and the second resonator is part of a receive filter.
36 . The filter device of claim 20 , wherein the first resonator and the second resonator are components of a transmit filter, and wherein the second chip further comprises a receive filter.
37 . The filter device of claim 20 , wherein the first resonator and the second resonator are components of a receive filter, and wherein the second chip further comprises a transmit filter.
38 . The filter device of claim 20 , wherein the resonators differ by type in terms of being series or shunt resonators, wherein the first resonator is a series resonator and the second resonator is a shunt resonator, the second resonator further comprising an acoustic reflector sandwiched between the second piezoelectric layer and a second base.
39 . A filter device comprising:
a first chip comprising:
a first interdigital transducer (IDT) of a first resonator on a surface of a first piezoelectric layer, wherein the first resonator is a transversely excited solidly-mounted resonator, and
an acoustic reflector sandwiched between the first piezoelectric layer and a first base;
a second chip comprising:
a second IDT of a second resonator on a surface of a second piezoelectric layer, wherein the second resonator is a floating-diaphragm transversely excited resonator; and
an electrical connection between the first IDT and the second IDT.