Split ladder acoustic wave filters
Filter devices and methods of fabricating filter devices. A filter device includes a first chip and a second chip. The first chip has a first material stack and contains one or more series resonators of a ladder filter circuit. The second chip has a second material stack and contains one or more shunt resonators of the ladder filter circuit. The first material stack and the second material stack are different.
1. A filter device comprising:
a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit; and
a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
the one or more series resonators and the one or more shunt resonators are non-bonded SAW (surface acoustic wave) resonators, and
the first material stack and the second material stack differ in one or more of:
a material of a piezoelectric plate,
a thickness of the piezoelectric plate,
an orientation of the crystalline axes of the piezoelectric plate,
a material a conductor pattern formed over the piezoelectric plate,
a thickness of the conductor pattern,
a material of a dielectric layer formed over the conductor pattern, and
a thickness of the dielectric layer.
2. The filter device of claim 1 , wherein
the first chip contains all of the series resonators of the ladder filter circuit, and
the second chip contains all of the shunt resonators of the ladder filter circuit.
3. The filter device of claim 1 , wherein
the first chip and the second chip are attached to a circuit card that includes at least one conductor for making an electrical connection between a series resonator of the one or more series resonators and a shunt resonator of the one or more shunt resonators.
4. A filter device comprising:
a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit and
a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
the one or more series resonators and the one or more shunt resonators are bonded-wafer resonators, and
the first material stack and the second material stack differ in one or more of:
a material of a base,
a thickness of the base,
a material of a dielectric layer between the base and a piezoelectric wafer,
a thickness of the dielectric layer between the base and a piezoelectric wafer,
a material of the piezoelectric wafer,
a thickness of the piezoelectric wafer,
an orientation of the crystalline axes of the piezoelectric wafer,
a material of a conductor pattern formed over the piezoelectric wafer,
a thickness of the conductor pattern,
a material of a dielectric layer formed over the conductor pattern, and
a thickness of the dielectric layer formed over the conductor pattern.
5. The filter device of claim 4 , wherein
the first material stack includes a 46-degree Y-cut lithium tantalate piezoelectric wafer, and
the second material stack includes a 42-degree Y-cut lithium tantalate piezoelectric wafer.
6. The filter device of claim 4 , wherein
the first chip contains all of the series resonators of the ladder filter circuit, and
the second chip contains all of the shunt resonators of the ladder filter circuit.
7. The filter device of claim 4 , wherein
the first chip and the second chip are attached to a circuit card that includes at least one conductor for making an electrical connection between a series resonator of the one or more series resonators and a shunt resonator of the one or more shunt resonators.
8. A filter device comprising:
a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit; and
a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
the one or more series resonators and the one or more shunt resonators are floating diaphragm resonators, each floating diaphragm resonator comprising:
a piezoelectric wafer, a portion of the piezoelectric wafer forming a diaphragm floating over a cavity formed in a base; and
a conductor pattern including an interdigital transducer (IDT) formed on a surface of the piezoelectric wafer, interleaved fingers of the IDT disposed on the diaphragm, and
the first material stack and the second material stack differ in one or more of:
a material of a base,
a thickness of the base,
a material of a dielectric layer between the base and a piezoelectric wafer,
a thickness of the dielectric layer between the base and the piezoelectric,
a material of the piezoelectric wafer,
a thickness of the piezoelectric wafer,
an orientation of the crystalline axes of the piezoelectric wafer,
a material of a conductor pattern formed over the piezoelectric wafer,
a thickness of the conductor pattern,
a material of a dielectric layer formed over the conductor pattern, and
a thickness of the dielectric layer formed over the conductor pattern.
9. The filter device of claim 8 , wherein
the first chip contains all of the series resonators of the ladder filter circuit, and
the second chip contains all of the shunt resonators of the ladder filter circuit.
10. The filter device of claim 8 , wherein
the first chip and the second chip are attached to a circuit card that includes at least one conductor for making an electrical connection between a series resonator of the one or more series resonators and a shunt resonator of the one or more shunt resonators.
11. A filter device comprising:
a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit;
and a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
the one or more series resonators and the one or more shunt resonators are solidly-mounted membrane resonators, and
the first material stack and the second material stack differ in one or more of:
a material of a base,
a thickness of the base,
a number of layers in an acoustic Bragg reflector disposed between the base and a piezoelectric wafer and the material and thickness of each layer,
a thickness of the dielectric layer between the base and the piezoelectric,
a material of the piezoelectric wafer,
a thickness of the piezoelectric wafer,
an orientation of the crystalline axes of the piezoelectric wafer,
a material of a conductor pattern formed over the piezoelectric wafer,
a thickness of the conductor pattern,
a material of a dielectric layer formed over the conductor pattern, and
a thickness of the dielectric layer formed over the conductor pattern.
12. The filter device of claim 11 , wherein
the first chip contains all of the series resonators of the ladder filter circuit, and
the second chip contains all of the shunt resonators of the ladder filter circuit.
13. The filter device of claim 11 , wherein
the first chip and the second chip are attached to a circuit card that includes at least one conductor for making an electrical connection between a series resonator of the one or more series resonators and a shunt resonator of the one or more shunt resonators.
14. A filter device comprising:
a first chip having a first material stack, the first chip containing one or more series resonators of a ladder filter circuit; and
a second chip having a second material stack, the second chip containing one or more shunt resonators of the ladder filter circuit, wherein
the one or more series resonators are bonded-wafer resonators, and
the one or more shunt resonators are non-bonded SAW resonators.
15. A duplexer including a transmit ladder filter circuit and a receive ladder filter circuit, comprising:
a first chip having a first material stack, the first chip containing series resonators of the transmit ladder filter circuit and the receive ladder filter circuit; and
a second chip having a second material stack, the second chip containing shunt resonators of the receive filter circuit and the transmit ladder filter circuit,
wherein the first material stack and the second material stack are different.
16. The duplexer of claim 15 , wherein
the first chip contains all of the series resonators of the transmit ladder filter circuit and the receive ladder filter circuit, and
the second chip contains all of the shunt resonators of the transmit ladder filter circuit and the receive ladder filer circuit.
17. A duplexer including a transmit ladder filter circuit and a receive ladder filter circuit, comprising:
a first chip having a first material stack, the first chip containing series resonators of the transmit ladder filter circuit, and
a second chip having a second material stack, the second chip containing shunt resonators of the transmit ladder filter circuit and all resonators of the receive filter circuit,
wherein the first material stack and the second material stack are different.
18. The duplexer of claim 17 , wherein
the series resonators of the transmit ladder filter circuit are bonded-wafer resonators, and
the shunt resonators of the transmit ladder filter circuit and all resonators of the receive filter circuit are non-bonded SAW resonators.