Transversely-excited film bulk acoustic resonator with optimized piezoelectric plate thickness and electrode mark and pitch
Acoustic resonators and filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, the back surface attached to a surface of a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate, and a conductor pattern on the front surface, the conductor pattern including an interdigital transducer (IDT), interleaved fingers of the IDT on the diaphragm. A ratio of a mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3. A thickness between the front and back surfaces is greater than or equal to 200 nm and less than or equal to 1000 nm.
1 . An acoustic resonator comprising:
a substrate;
a piezoelectric layer attached to the substrate either directly or via one or more intermediate layers and having a thickness that is greater than or equal to 200 nm and less than or equal to 1000 nm; and
an interdigital transducer (IDT) having a plurality of interleaved fingers at a surface of the piezoelectric layer,
wherein a thickness of each of the plurality of interleaved fingers of the IDT is less than 0.5 times the thickness of the piezoelectric layer,
wherein a pitch of the plurality of interleaved fingers of the IDT is between 2 and 20 times a width of each of the plurality of interleaved fingers, and
wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric layer and transverse to a direction of an electric field created by the IDT.
2 . The acoustic resonator of claim 1 , wherein the substrate includes a base and the one or more intermediate layers, and the piezoelectric layer includes a diaphragm over a cavity in the substrate.
3 . The acoustic resonator of claim 2 , wherein the cavity extends into at least one of the base and the one or more intermediate layers of the substrate.
4 . The acoustic resonator of claim 3 , wherein the IDT is disposed at the surface of the piezoelectric layer that is opposite the cavity.
5 . The acoustic resonator of claim 1 , wherein a ratio of the width of each of the plurality of interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3 the pitch of the plurality of interleaved fingers.
6 . The acoustic resonator of claim 1 , wherein the thickness of each of the plurality of interleaved fingers and the thickness of the piezoelectric layer are measured in a direction orthogonal to the surface of the piezoelectric layer.
7 . A filter device, comprising:
a plurality of acoustic resonators, at least one of the acoustic resonators comprising:
a substrate,
a piezoelectric layer attached to the substrate either directly or via one or more intermediate layers and having a thickness that is greater than or equal to 200 nm and less than or equal to 1000 nm, and
an interdigital transducer (IDT) having a plurality of interleaved fingers at a surface of the piezoelectric layer,
wherein a thickness of each of the plurality of interleaved fingers of the IDT is less than 0.5 times the thickness of the piezoelectric layer, and
wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric layer and transverse to a direction of an electric field created by the IDT.
8 . The filter device of claim 7 , wherein the substrate of the at least one acoustic resonator includes a base and the one or more intermediate layers, and the piezoelectric layer includes a diaphragm over a cavity in the substrate.
9 . The filter device of claim 8 , wherein the cavity of the at least one acoustic resonator extends into at least one of the base and the one or more intermediate layers of the substrate.
10 . The filter device of claim 9 , wherein the IDT of the at least one acoustic resonator is disposed at the surface of the piezoelectric layer that is opposite the cavity.
11 . The filter device of claim 7 , wherein, for the at least one acoustic resonator, a ratio of a width of each of the plurality of interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3 a pitch of the plurality of interleaved fingers.
12 . The filter device of claim 7 , wherein, for the at least one acoustic resonator, the thickness of each of the plurality of interleaved fingers and the thickness of the piezoelectric layer are measured in a direction orthogonal to the surface of the piezoelectric layer.
13 . The filter device of claim 7 , wherein, for the at least one acoustic resonator, a pitch of the plurality of interleaved fingers of the IDT is greater than or equal to 2 times and less than or equal to 20 times a width of each of the plurality of interleaved fingers.
14 . An acoustic resonator comprising:
a substrate;
a piezoelectric layer coupled to the substrate and having a thickness that is greater than or equal to 200 nm and less than or equal to 1000 nm; and
an interdigital transducer (IDT) having a plurality of interleaved fingers on the piezoelectric layer,
wherein a thickness of the plurality of interleaved fingers of the IDT is less than 0.5 times the thickness of the piezoelectric layer, and
wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer, and
wherein the primary shear acoustic mode is a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to a surface of the piezoelectric layer and transverse to a direction of an electric field created by the IDT.
15 . The acoustic resonator of claim 14 , wherein:
the substrate includes a base and one or more intermediate layers, and
the piezoelectric layer includes a diaphragm over a cavity that extends into at least one of the base and the one or more intermediate layers of the substrate.
16 . The acoustic resonator of claim 15 , wherein the IDT is disposed at the surface of the piezoelectric layer that is opposite the cavity.
17 . The acoustic resonator of claim 14 , wherein a ratio of a width of each of the plurality of interleaved fingers is greater than or equal to 0.12 and less than or equal to 0.3 a pitch of the plurality of interleaved fingers.
18 . The acoustic resonator of claim 14 , wherein the thickness of each of the plurality of interleaved fingers and the thickness of the piezoelectric layer are measured in a direction orthogonal to the surface of the piezoelectric layer.
19 . The acoustic resonator of claim 14 , wherein a pitch of the plurality of interleaved fingers of the IDT is greater than or equal to 2 times and less than or equal to 20 times a width of each of the plurality of interleaved fingers.