Acoustic wave device and method of manufacturing acoustic wave device
An acoustic wave device capable of exhibiting good characteristics for a prolonged period of time and a method of manufacturing an acoustic wave device are provided. An acoustic wave device of the invention includes a piezoelectric body layer having piezoelectricity and one surface, a pair of electrodes for, when electrified, inducing acoustic vibration in the piezoelectric body layer, the electrodes arranged on the one surface of the piezoelectric body layer, and a silicon dioxide layer provided in contact with the piezoelectric body layer and/or the electrodes, the silicon dioxide layer composed of silicon dioxide as its major component, wherein the silicon dioxide layer is formed by performing sputtering with a silicon dioxide target in an atmosphere of an oxygen flow rate ratio of 60% or more.
1. An acoustic wave device, comprising:
a piezoelectric body layer having piezoelectricity and one surface;
a pair of electrodes for, when electrified, inducing acoustic vibration in the piezoelectric body layer, the electrodes arranged on the one surface of the piezoelectric body layer; and
a silicon dioxide layer provided in contact with the piezoelectric body layer and/or the electrodes, the silicon dioxide layer composed of silicon dioxide as its major component,
wherein the silicon dioxide layer is formed by performing sputtering with a silicon dioxide target in an atmosphere of an oxygen flow rate ratio of 60% or more.
2. The acoustic wave device as claimed in claim 1 , wherein in a spectrum obtained by analyzing the silicon dioxide layer with a Raman spectroscopy, when the intensity of a peak existing in a wave number region of 800 to 850 cm −1 is defined by Ps and the intensity of a peak existing in a wave number region of 475 to 515 cm −1 is defined by P4, the peak intensity ratio P4/Ps is equal to or smaller than 1.2.
3. The acoustic wave device as claimed in claim 1 , wherein in a spectrum obtained by analyzing the silicon dioxide layer with a Raman spectroscopy, when the intensity of a peak existing in a wave number region of 800 to 850 cm −1 is defined by Ps and the intensity of a peak existing in a wave number region of 600 to 620 cm −1 is defined by P3, the peak intensity ratio P3/Ps is equal to or smaller than 1.0.
4. The acoustic wave device as claimed in claim 1 , wherein in a spectrum obtained by analyzing the silicon dioxide layer with a Raman spectroscopy, when the integral value of the intensity in a wave number region of 250 to 510 cm −1 is defined by I1 and the integral value of the intensity in a wave number region of 800 to 840 cm −1 is defined by I2, the intensity integral value ratio I1/I2 is equal to or smaller than 50.
5. The acoustic wave device as claimed in claim 1 , wherein the constant term A of a Cauchy dispersion formula represented by the following equation (I) is 1.44 to 1.46:
n 2 =A+B/λ 2 (I)
where the λ is a wavelength of the light, the n is a refractive index of the silicon dioxide layer to the light having a wavelength of λ, and each of the A and B is a constant.
6. The acoustic wave device as claimed in claim 1 , wherein each of the electrodes is a comb-shaped electrode, and when electrified, a surface acoustic wave is induced in the piezoelectric body layer as the acoustic vibration.
7. The acoustic wave device as claimed in claim 6 , further comprises a substrate for supporting the piezoelectric body layer.
8. The acoustic wave device as claimed in claim 7 , wherein the piezoelectric body layer is provided on the substrate via a hard layer formed of diamond or diamond-like carbon.