Transversely-excited film bulk acoustic resonators for high power applications
There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the piezoelectric plate.
1. An acoustic resonator device comprising:
a substrate having a surface;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate; and
an interdigital transducer (IDT) formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm, the piezoelectric plate and the IDT configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode in the diaphragm, wherein
a thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.
2. The acoustic resonator device of claim 1 , wherein
the interleaved fingers of the IDT are substantially aluminum.
3. The acoustic resonator device of claim 2 , further comprising:
a front-side dielectric layer deposited between the fingers of the IDT, a thickness of the front-side dielectric layer being greater than zero and less than or equal to 0.25 times the thickness of the piezoelectric plate,
wherein the thickness of the interleaved fingers of the IDT is greater than or equal to 0.875 times the thickness of the piezoelectric plate and less than or equal to 2.25 times the thickness of the piezoelectric plate.
4. The acoustic resonator device of claim 1 , wherein
the interleaved fingers of the IDT are substantially copper, and
the thickness of the interleaved fingers of the IDT is within
a range of greater than or equal to 0.85 times the thickness of the piezoelectric plate and less than 1.42 times the thickness of the piezoelectric plate, or
a range of greater than or equal to 1.95 times the thickness of the piezoelectric plate and less than 2.325 times the thickness of the piezoelectric plate.
5. The acoustic resonator device of claim 4 , further comprising:
a front-side dielectric layer deposited between the fingers of the IDT, a thickness of the front-side dielectric layer being greater than zero and less than or equal to 100 nm,
wherein the thickness of the interleaved fingers of the IDT is within the range of greater than or equal to 0.85 times the thickness of the piezoelectric plate and less than or equal to 1.42 times the thickness of the piezoelectric plate.
6. The acoustic resonator device of claim 1 , wherein
the thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm.
7. The acoustic resonator device of claim 1 , wherein
a pitch of the interleaved fingers of the IDT is greater than or equal to 6 times the thickness of the piezoelectric plate and less than or equal to 12.5 times the thickness of the piezoelectric plate.
8. The acoustic resonator device of claim 1 , wherein
an aperture of the IDT is greater than or equal to 20 microns and less than or equal to 60 microns.
9. The acoustic resonator device of claim 1 , wherein
a direction of acoustic energy flow of the primary acoustic mode is substantially normal to the front and back surfaces of the diaphragm.
10. The acoustic resonator device of claim 1 , wherein
the diaphragm is contiguous with the piezoelectric plate around at least 50% of a perimeter of the cavity.
11. A filter device, comprising:
a substrate;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate, portions of the single-crystal piezoelectric plate forming one or more diaphragms spanning respective cavities in the substrate; and
a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators, interleaved fingers of each of the plurality of IDTs disposed on a diaphragm of the one or more diaphragms, the piezoelectric plate and all of the IDTs configured such that respective radio frequency signals applied to each IDT excite respective shear primary acoustic modes in the respective diaphragms, wherein
the interleaved fingers of all of the plurality of IDTs have a common finger thickness, which is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.
12. The filter device of claim 11 , wherein
the interleaved fingers of all of the plurality of IDTs are substantially aluminum.
13. The filter device of claim 12 , further comprising:
a front-side dielectric layer deposited between the fingers of at least one of the plurality of IDTs, a thickness of the front-side dielectric layer being greater than zero and less than or equal to 0.25 times the thickness of the piezoelectric plate,
wherein the common finger thickness is greater than or equal to 0.875 times the thickness of the piezoelectric plate and less than or equal to 2.25 times the thickness of the piezoelectric plate.
14. The filter device of claim 11 , wherein
the interleaved fingers of all of the plurality of IDTs are substantially copper, and
the common finger thickness is greater than or equal to 0.85 times the thickness of the piezoelectric plate and less than 1.42 times the thickness of the piezoelectric plate.
15. The filter device of claim 14 , further comprising:
a front-side dielectric layer deposited between the fingers of at least one of the plurality of IDTs, a thickness of the front-side dielectric layer being greater than zero and less than or equal to 0.25 times the thickness of the piezoelectric plate.
16. The filter device of claim 11 , wherein
the thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm.
17. The filter device of claim 11 , wherein
respective pitches of the interleaved fingers of all of the plurality of IDTs are greater than or equal to 6 times the thickness of the piezoelectric plate and less than or equal to 12.5 times the thickness of the piezoelectric plate.
18. The filter device of claim 11 , wherein
respective apertures of all of the plurality of IDTs are greater than or equal to 20 microns and less than or equal to 60 microns.
19. The filter device of claim 11 , wherein
a direction of acoustic energy flow of the respective primary acoustic modes excited by all of the IDTs is substantially normal to the front and back surfaces of the diaphragm.
20. The filter device of claim 11 , wherein
each diaphragm of the one or more diaphragms is contiguous with the piezoelectric plate around at least 50% of a perimeter of the respective cavity.
21. A filter device, comprising:
a substrate;
a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate, portions of the single-crystal piezoelectric plate forming one or more diaphragms spanning respective cavities in the substrate;
a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators, interleaved fingers of each of the plurality of IDTs disposed on a diaphragm of the one or more diaphragms, the plurality of resonators including one or more shunt resonators and one or more series resonators;
a first dielectric layer having a first thickness deposited between the fingers of the IDTs of the one or more shunt resonators; and
a second dielectric layer having a second thickness deposited between the fingers of the IDTs of the one or more series resonators, wherein
the second thickness is less than the first thickness and greater than or equal to zero, and
the interleaved fingers of all of the plurality of IDTs have a common finger thickness, which is greater than or equal to 0.875 times a thickness of the piezoelectric plate and less than 2.25 times the thickness of the piezoelectric plate.
22. The filter device of claim 21 , wherein
the interleaved fingers of all of the plurality of IDTs are substantially aluminum.
23. The filter device of claim 21 , wherein
the interleaved fingers of all of the plurality of IDTs are substantially copper, and
the common finger thickness is greater than or equal to 0.85 times the thickness of the piezoelectric plate and less than 1.42 times the thickness of the piezoelectric plate.
24. The filter device of claim 21 , wherein
the thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm.
25. The filter device of claim 21 , wherein
respective pitches of the interleaved fingers of all of the plurality of IDTs are greater than or equal to 6 times the thickness of the piezoelectric plate and less than or equal to 12.5 times the thickness of the piezoelectric plate.
26. The filter device of claim 21 , wherein
respective apertures of all of the plurality of IDTs are greater than or equal to 20 microns and less than or equal to 60 microns.
27. The filter device of claim 21 , wherein
a direction of acoustic energy flow of the respective primary acoustic modes excited by all of the plurality of IDTs is substantially orthogonal to the front and back surfaces of the diaphragm.
28. The filter device of claim 21 , wherein
each diaphragm of the one or more diaphragms is contiguous with the piezoelectric plate around at least 50% of a perimeter of the respective cavity.
29. The filter device of claim 21 , wherein
the first thickness is less than or equal to 0.25 times the thickness of the piezoelectric plate.