Acoustic resonator lid for thermal transport
An apparatus for filtering radio frequency signals is provided. The apparatus includes a substrate and a membrane coupled to the substrate that includes piezoelectric material. The apparatus also includes an interdigital transducer (IDT) coupled to the membrane and includes a plurality of interleaved fingers. The apparatus also includes a lid, in which the membrane is arranged between the substrate and the lid with a first cavity having a first height between the lid and a first main surface of the membrane and a second cavity having a second height between the substrate and a second main surface of the membrane that opposes the first main surface. Moreover, the first height between the lid and the first main surface of the membrane is greater than a pitch of at least one pair of interleaved fingers of the plurality of interleaved fingers and at most four times greater than the second height.
1 . An acoustic resonator comprising:
a piezoelectric layer;
an interdigital transducer (IDT) at a surface of the piezoelectric layer and comprising a plurality of interleaved fingers;
a lid disposed above the piezoelectric layer and defining a first cavity between the lid and the piezoelectric layer;
a substrate disposed below the piezoelectric layer opposite the lid; and
a dielectric layer disposed between the substrate and the piezoelectric layer and having a second cavity extending at least partially therein,
wherein a height of the first cavity is greater than a pitch of at least two interleaved fingers of the plurality of interleaved fingers and at most four times greater than a height of the second cavity.
2 . The acoustic resonator of claim 1 , wherein the height of the first cavity is greater than or equal to the height of the second cavity.
3 . The acoustic resonator of claim 1 , wherein the pitch corresponds to a center-to-center spacing between the at least two interleaved fingers.
4 . The acoustic resonator of claim 1 , wherein a thermal conduction between the piezoelectric layer and the lid corresponds to a thermal conduction through the first cavity based on a distance between the lid and the piezoelectric layer being configured to correspond to the height of the first cavity.
5 . The acoustic resonator of claim 1 , wherein a thermal conduction between the piezoelectric layer and the lid forms a thermal conduction channel that is proportional to an area of the first cavity and the height of the first cavity.
6 . The acoustic resonator of claim 1 , wherein the lid comprises a semiconductor material.
7 . The acoustic resonator of claim 1 , wherein the piezoelectric layer and the IDT is configured such that a respective radio frequency signal applied to the IDT primarily excites a shear acoustic mode within the piezoelectric layer.
8 . The acoustic resonator of claim 1 , further comprising a gas filled in the first cavity and the second cavity that is configured to increase thermal conduction through the first cavity and the second cavity.
9 . The acoustic resonator of claim 1 , wherein the height of each of the first cavity and the second cavity is measured in a direction substantially and/or predominantly perpendicular to the surface of the piezoelectric layer.
10 . The acoustic resonator of claim 1 , further comprising a metal layer disposed between the lid and the piezoelectric layer, such that an inner surface of the metal layer defines the first cavity between the lid and the piezoelectric layer.
11 . The acoustic resonator of claim 10 , further comprising an additional dielectric layer on the IDT and between the interleaved fingers of the IDT, such that the height of the first cavity is defined between a bottom surface of the lid and a surface of the dielectric layer that is opposite the IDT.
12 . A filter device comprising:
at least one piezoelectric layer;
a plurality of interdigital transducers (IDTs) at a surface of the at least one piezoelectric layer and each comprising a plurality of interleaved fingers;
a plurality of lids disposed above the at least one piezoelectric layer, respectively, and defining a plurality of first cavities between the respective plurality of lids and the at least one piezoelectric layer,
at least one substrate disposed below the at least one piezoelectric layer, respectively, and opposite the plurality of lids; and
at least one dielectric layer disposed between the at least one substrate and the at least one piezoelectric layer and having a plurality of second cavities extending at least partially therein;
wherein a height of each of the plurality of first cavities is greater than a pitch of at least two interleaved fingers of the plurality of interleaved fingers and at most four times greater than a height of each of the plurality of second cavities.
13 . The filter device of claim 12 , wherein the height of each of the plurality of first cavities is greater than or equal to the height of each of the plurality of second cavities.
14 . The filter device of claim 12 , wherein the pitch corresponds to a center-to-center spacing between the at least two interleaved fingers.
15 . The filter device of claim 12 , wherein the plurality of lids each comprise a semiconductor material.
16 . The filter device of claim 12 , wherein the at least one piezoelectric layer and the plurality of IDTs are each configured such that a respective radio frequency signal applied to the respective IDT primarily excites a shear acoustic mode within the at least one piezoelectric layer.
17 . The filter device of claim 12 , further comprising a gas filled in each of the plurality of first cavities and each of the plurality of second cavities that is configured to increase thermal conduction through the respective cavities.
18 . The filter device of claim 12 , wherein the respective heights of the plurality of first cavities and the plurality of second cavities are measured in a direction perpendicular to the surface of the at least one piezoelectric layer.
19 . The filter device of claim 12 , further comprising:
a plurality of metal layers disposed between the plurality of lids and the at least one piezoelectric layer, respectively, such that an inner surface of the plurality of metal layers defines the plurality of first cavities between the plurality of lids and the at least one piezoelectric layer; and
at least one additional dielectric layer on the plurality of IDTs and between the interleaved fingers of each of the IDTs, such that the height of each of the plurality of first cavities is defined between respective bottom surfaces of the plurality of lids and a surface of the at least one dielectric layer that is opposite the plurality of IDTs.
20 . A radio frequency module, comprising:
a filter device having a plurality of acoustic resonators that each comprise:
a piezoelectric layer;
an interdigital transducer (IDT) at a surface of the piezoelectric layer and comprising a plurality of interleaved fingers;
a lid disposed above the piezoelectric layer and defining a first cavity between the lid and the piezoelectric layer;
a substrate disposed below the piezoelectric layer opposite the lid; and
a dielectric layer disposed between the substrate and the piezoelectric layer and having a second cavity extending at least partially therein,
wherein a radio frequency circuit coupled to the filter device, the filter device and the radio frequency circuit being enclosed within a common package, and
wherein, for each of the plurality of acoustic resonators, a height of the first cavity is greater than a pitch of at least one pair of interleaved fingers of the plurality of interleaved fingers and at most four times greater than a height of the second cavity.