IP Library Granted Patent US 12,375,061
Granted Patent B2
US 12,375,061 · App. 18/478,193 · Granted Jul 29, 2025

Transversely-excited film bulk acoustic resonator matrix filters

Inventors: Pintu Adhikari (West Lafayette, IN); Neal Fenzi (Santa Barbara, CA); Andrew Guyette (San Mateo, CA)
Assignee: Murata Manufacturing Co., Ltd.
H03H9/564H03H3/02H03H9/02228H03H9/174H03H9/542H03H2003/023
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Quick Facts
Patent No.
US 12,375,061
App. No.
18/478,193
Granted
Jul 29, 2025
Kind
B2
Abstract

Radio frequency filters. A radio frequency filter includes a substrate attached to a piezoelectric plate, portions of the piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern formed on the piezoelectric plate includes a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, interleaved fingers of each IDT disposed on a respective diaphragm of the plurality of diaphragms. The conductor pattern connects the plurality of resonators in a matrix filter circuit including a first sub-filter and a second sub-filter, each sub-filter comprising two or more resonators from the plurality of resonators.

Claims (65)

1. A radio frequency filter, comprising:

a substrate;

at least one piezoelectric layer above the substrate, portions of the at least one piezoelectric layer over respective cavities of the radio frequency filter;

a conductor pattern at the at least one piezoelectric layer, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, interleaved fingers of each IDT disposed on respective portions of the at least one piezoelectric layer over the respective cavities, wherein the conductor pattern connects the plurality of resonators in a matrix filter circuit comprising a first sub-filter and a second sub-filter, each sub-filter comprising two or more resonators from the plurality of resonators;

a first dielectric layer having a first thickness and that is over the IDTs of the two or more resonators of the first sub-filter; and

a second dielectric layer having a second thickness and that is over the IDTs of the two or more resonators of the second sub-filter, the first thickness being different than the second thickness,

wherein either the first or second dielectric layer has a thickness t dn , and

wherein the radiofrequency filter further comprises a passivation layer of dielectric having a thickness t pass at each of the plurality of resonators, wherein t dn ≥t pass .

2. The radio frequency filter of claim 1 , further comprising:

a first port and a second port,

wherein the two or more resonators of the first sub-filter are connected in series between the first port and the second port, and

wherein the two or more resonators of the second sub-filter are connected in series between the first port and the second port.

3. The radio frequency filter of claim 2 , further comprising:

a first low-edge resonator, from the plurality of resonators, connected between the first port and ground; and

a second low-edge resonator, from the plurality of resonators, connected between the second port and ground,

wherein respective resonance frequencies of the first and second low-edge resonators are adjacent to a lower edge of a passband of the radio frequency filter.

4. The radio frequency filter of claim 3 , wherein all of the first and second low-edge resonators have a common substrate material and a common piezoelectric material.

5. The radio frequency filter of claim 2 , further comprising:

a first high-edge resonator, from the plurality of resonators, connected between the first port and ground; and

a second high-edge resonator, from the plurality of resonators, connected between the second port and ground,

wherein respective resonance frequencies of the first and second high-edge resonators are adjacent to a higher edge of the passband of the filter.

6. The radio frequency filter of claim 1 , wherein the at least one piezoelectric layer and the plurality of IDTs are configured such that respective radio frequency signals applied to the plurality of IDTs excite respective primary shear acoustic modes in the respective portions of the at least one piezoelectric layer over the respective cavities.

7. The radio frequency filter of claim 1 , wherein each of the first and second sub-filters comprises:

m resonators connected in series, where m is an integer greater than one; and

m−1 capacitors, each capacitor connected from a junction between two of the m resonators and a common terminal.

8. The radio frequency filter of claim 7 , wherein each of the m−1 capacitors of each sub-filter are metal-insulator-metal capacitors.

9. The radio frequency filter of claim 7 , wherein each of the m−1 capacitors of each sub-filter are interdigitated capacitors.

10. The radio frequency filter of claim 1 , wherein the first and second sub-filters are one of a plurality of n sub-filters, each of the n sub-filters further comprising m−1 capacitors that are each connected from a junction between two of the plurality of resonators and a common terminal.

11. The radio frequency filter of claim 10 , wherein each of the m−1 capacitors of each of the n sub-filters are metal-insulator-metal capacitors.

12. The radio frequency filter of claim 10 , further comprising an inductor connected from the common terminal to ground.

13. A radio frequency filter, comprising:

a substrate;

at least one piezoelectric layer above the substrate; and

a conductor pattern at the at least one piezoelectric layer, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, each IDT including a plurality of interleaved fingers,

wherein the conductor pattern connects the plurality of resonators in a matrix filter circuit comprising a first sub-filter and a second sub-filter,

wherein each sub-filter comprises two or more resonators from the plurality of resonators,

wherein the at least one piezoelectric layer comprises a plurality of portions that are disposed over respective cavities of the radio frequency filter, and

wherein the interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the plurality of portions of the at least one piezoelectric layer over the respective cavities.

14. A radio frequency filter comprising:

a substrate;

a piezoelectric layer above the substrate; and

a conductor pattern on the at least one piezoelectric layer, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, each IDT including a plurality of interleaved fingers,

wherein the conductor pattern connects the plurality of resonators in a matrix filter circuit comprising a first sub-filter and a second sub-filter,

wherein each sub-filter comprises two or more resonators from the plurality of resonators,

wherein a first dielectric layer having a first thickness is over the IDTs of the two or more resonators of the first sub-filter, and

wherein a second dielectric layer having a second thickness is over the IDTs of the two or more resonators of the second sub-filter, the first thickness being different than the second thickness.

15. The radio frequency filter of claim 13 , further comprising:

a first port and a second port,

wherein the two or more resonators of the first sub-filter are connected in series between the first port and the second port, and

wherein the two or more resonators of the second sub-filter are connected in series between the first port and the second port.

16. The radio frequency filter of claim 15 , further comprising:

a first low-edge resonator, from the plurality of resonators, connected between the first port and ground; and

a second low-edge resonator, from the plurality of resonators, connected between the second port and ground,

wherein respective resonance frequencies of the first and second low-edge resonators are adjacent to a lower edge of a passband of the radio frequency filter.

17. The radio frequency filter of claim 16 , wherein all of the first and second low-edge resonators have a common substrate material and a common piezoelectric material.

18. The radio frequency filter of claim 13 , further comprising:

a first high-edge resonator, from the plurality of resonators, connected between the first port and ground; and

a second high-edge resonator, from the plurality of resonators, connected between the second port and ground,

wherein respective resonance frequencies of the first and second high-edge resonators are adjacent to a higher edge of the passband of the filter.

19. The radio frequency filter of claim 14 ,

wherein the at least one piezoelectric layer comprises a plurality of portions that are disposed over respective cavities of the radio frequency filter, and

wherein the interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the plurality of portions of the at least one piezoelectric layer over the respective cavities.

20. The radio frequency filter of claim 14 , wherein:

either the first dielectric layer or second dielectric layer has a thickness t dn , and

the radiofrequency filter further comprises a passivation layer of dielectric having a thickness t pass at each of the plurality of resonators, wherein t dn ≥t pass .

Continuity (5)
Continuation 17830219 · Jun 1, 2022
Continuation 17133849 · Dec 24, 2020
Continuation In Part 17121724 · Dec 14, 2020
Provisional Application 63087789 · Oct 5, 2020
Related Publication 20240030895A1 · Jan 25, 2024
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