IP Library › Granted Patent US 12,341,490
Granted Patent B2
US 12,341,490 · App. 17/855,711 · Granted Jun 24, 2025

Low loss transversely-excited film bulk acoustic resonators and filters

Inventors: Bryant Garcia (Mississauga, CA); Greg Dyer (Santa Barbara, CA)
Assignee: Murata Manufacturing Co., Ltd.
H03H9/54H03H9/0211H03H9/13H03H9/17
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Quick Facts
Patent No.
US 12,341,490
App. No.
17/855,711
Granted
Jun 24, 2025
Kind
B2
Abstract

An acoustic resonator device includes a portion of a piezoelectric plate is a diaphragm spanning a cavity in a substrate. A conductor pattern on a surface of the piezoelectric plate includes an interdigital transducer (IDT) with a first busbar, a second busbar, and a plurality of interleaved fingers extending alternately from the first and second busbars, first and second reflector elements proximate and parallel to a first finger of the interleaved fingers, and third and fourth reflector element proximate and parallel to a last finger of the interleaved fingers. Overlapping portions of the interleaved fingers and the first to fourth reflector elements are on the diaphragm. pr1 is a center-to-center distance of the first and second reflector elements and a center-to-center distance of the third and fourth reflector elements, p is a pitch of the interleaved fingers, and 1.1p≤pr1≤1.5p.

Claims (72)

1. An acoustic resonator device comprising:

a diaphragm comprising a portion of a piezoelectric layer that is over a cavity; and

a conductor pattern on a surface of the piezoelectric layer, the conductor pattern comprising:

an interdigital transducer (IDT) comprising a first busbar, a second busbar, and a plurality of interleaved fingers, wherein the plurality of interleaved fingers extend alternately from the first and second busbars and overlapping portions of the plurality of interleaved fingers are on the diaphragm;

first and second reflector elements on the diaphragm proximate to a first finger of the plurality of interleaved fingers; and

third and fourth reflector elements on the diaphragm proximate to a last finger of the plurality of interleaved fingers,

wherein:

pr1 is a center-to-center distance between the first and second reflector elements and a center-to-center distance between the third and fourth reflector elements,

p is a pitch that is a center-to-center distance between two adjacent interleaved fingers of the plurality of interleaved fingers, and

1.1p≤pr1≤1.5p.

2. The acoustic resonator device of claim 1 , wherein:

the first finger and the first and second reflector elements extend from the first busbar,

the last finger and the third and fourth reflector elements extend from a same busbar of the first or second busbar.

3. The acoustic resonator device of claim 1 , wherein:

the first finger extends from the first busbar,

the first and second reflector elements extend from the second busbar,

the last finger extends from one busbar of the first and second busbars, and

the third and fourth reflector elements extend from the other busbar of the first or second busbar.

4. The acoustic resonator device of claim 1 , wherein:

pr2 is a center-to-center distance between the first reflector element and the first finger and a center-to-center distance between the third reflector element and the last finger, and

p≤pr2≤pr1.

5. The acoustic resonator device of claim 4 , wherein pr2=(pr1+p)/2.

6. The acoustic resonator device of claim 4 , wherein pr2=pr1.

7. The acoustic resonator device of claim 1 , wherein a mark mr of the first, second, third, and fourth reflector elements is configured to improve a Q-factor of the acoustic resonator device at a predetermined frequency.

8. The acoustic resonator device of claim 1 , wherein the first and second reflector elements of the conductor pattern extend in a direction parallel to the first finger, and the third and fourth reflector elements of the conductor pattern extend in a direction parallel to the last finger.

9. A bandpass filter, comprising:

a plurality of acoustic resonators comprising one or more series resonators and one or more shunt resonators connected in a ladder filter circuit, wherein:

each of the plurality of acoustic resonators comprises:

a diaphragm comprising a portion of a piezoelectric layer that is over a cavity, and

an interdigital transducer (IDT) on a surface of the piezoelectric layer, the IDT comprising a first busbar, a second busbar, and a plurality of interleaved fingers extending alternately from the first and second busbars, wherein overlapping portions of the plurality of interleaved fingers are on the respective diaphragm,

wherein at least one series resonator of the one or more series resonators further comprises:

first and second reflector elements on the respective diaphragm proximate to a first finger of the plurality of interleaved fingers; and

third and fourth reflector elements on the respective diaphragm proximate to a last finger of the plurality of interleaved fingers,

wherein:

pr1 is a center-to-center distance between the first and second reflector elements and a center-to-center distance between the third and fourth reflector elements,

p is a pitch that is a center-to-center distance between two adjacent interleaved fingers of the interleaved fingers, and

1.1p≤pr1≤1.5p.

10. The bandpass filter of claim 9 , wherein, for the at least one series resonator:

the first finger and the first and second reflector elements extend from the first busbar,

the last finger and the third and fourth reflector elements extend from the same busbar of the first or second busbar.

11. The bandpass filter of claim 9 , wherein, for the at least one series resonator:

the first finger extends from the first busbar,

the first and second reflector elements extend from the second busbar,

the last finger extends from one busbar of the first or second busbar, and

the third and fourth reflector elements extend from the other busbar of the first and second busbars.

12. The bandpass filter of claim 9 , wherein:

pr2 is a center-to-center distance between the first reflector element and the first finger and a center-to-center distance between the third reflector element and the last finger, and

p≤pr2≤pr1.

13. The bandpass filter of claim 12 , wherein pr2=(pr1+p)/2.

14. The bandpass filter of claim 12 , wherein pr2=pr1.

15. The bandpass filter of claim 9 , wherein, for the at least one series resonator:

a mark mr of the first, second, third, and fourth reflector elements is configured to improve an input/output transfer function of the bandpass filter at a predetermined frequency.

16. The bandpass filter of claim 9 , wherein, for the at least one series resonator, the first and second reflector elements of the conductor pattern extend in a direction parallel to the first finger, and the third and fourth reflector elements of the conductor pattern extend in a direction parallel to the last finger.

17. The bandpass filter of claim 9 , wherein all of the one or more series resonators comprise the respective first, second, third and fourth reflector elements.

18. The bandpass filter of claim 9 , wherein at least one shunt resonator of the one or more shunt resonators comprises:

respective first and second reflector elements on the respective diaphragm proximate and parallel to a first finger of the plurality of interleaved fingers; and

third and fourth reflector elements on the respective diaphragm proximate and parallel to a last finger of the plurality of interleaved fingers.

19. A bandpass filter including a series resonator and a shunt resonator connected in a ladder filter circuit, each of the series resonator and the shunt resonator comprising:

a piezoelectric layer that includes a diaphragm that is over a cavity, and

an interdigital transducer (IDT) on a surface of the piezoelectric layer, the IDT comprising:

a first busbar and a second busbar;

a plurality of interleaved fingers extending alternately from the first and second busbars and having overlapping portions on the diaphragm;

first and second reflector elements on the diaphragm proximate to a first finger of the plurality of interleaved fingers; and

third and fourth reflector elements on the diaphragm proximate to a last finger of the plurality of interleaved fingers,

wherein:

pr1 is a center-to-center distance between the first and second reflector elements and a center-to-center distance between the third and fourth reflector elements of the series resonator,

pr2 is a center-to-center distance between the first and second reflector elements and a center-to-center distance between the third and fourth reflector elements of the shunt resonator, and

pr1 and pr2 are different.

20. The bandpass filter of claim 19 , wherein:

for each of the series resonator and the shunt resonator, p is a pitch that is a center-to-center distance between two adjacent interleaved fingers of the plurality of interleaved fingers,

1.1p≤pr1≤1.5p, and

1.1p≤pr2≤1.5p.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 18, 2022
From: RESONANT INC.
To: MURATA MANUFACTURING CO., LTD
Reel/Frame 061966/0748 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2022
From: GARCIA, BRYANT; DYER, GREG
To: RESONANT INC.
Reel/Frame 060419/0916 →
Continuity (8)
Continuation In Part 17555349 · Dec 17, 2021
Continuation In Part 17229767 · Apr 13, 2021
Provisional Application 63244565 · Sep 15, 2021
Provisional Application 63196645 · Jun 3, 2021
Provisional Application 63074991 · Sep 4, 2020
Provisional Application 63066520 · Aug 17, 2020
Provisional Application 63012849 · Apr 20, 2020
Related Publication 20220352873A1 · Nov 3, 2022
References Cited (326)
US 5204575A · Kanda et al. · 1993 [cited by applicant]
US 5274345A · Gau · 1993 [cited by applicant]
US 5446330A · Eda et al. · 1995 [cited by applicant]
US 5552655A · Stokes et al. · 1996 [cited by applicant]
US 5631515A · Mineyoshi et al. · 1997 [cited by applicant]
US 5726610A · Allen et al. · 1998 [cited by applicant]
US 5729186A · Seki et al. · 1998 [cited by applicant]
US 5853601A · Krishaswamy · 1998 [cited by applicant]
US 6172582B1 · Hickernell · 2001 [cited by applicant]
US 6271617B1 · Yoneda et al. · 2001 [cited by applicant]
US 6377140B1 · Ehara et al. · 2002 [cited by applicant]
US 6516503B1 · Ikada et al. · 2003 [cited by applicant]
US 6540827B1 · Levy et al. · 2003 [cited by applicant]
US 6570470B2 · Maehara et al. · 2003 [cited by applicant]
US 6670866B2 · Ella et al. · 2003 [cited by applicant]
US 6707229B1 · Martin · 2004 [cited by applicant]
US 6710514B2 · Ikada et al. · 2004 [cited by applicant]
US 6833774B2 · Abbott et al. · 2004 [cited by applicant]
US 7009468B2 · Kadota et al. · 2006 [cited by applicant]
US 7345400B2 · Nakao et al. · 2008 [cited by applicant]
US 7463118B2 · Jacobsen · 2008 [cited by applicant]
US 7535152B2 · Ogami et al. · 2009 [cited by applicant]
US 7554427B2 · Matsumoto · 2009 [cited by applicant]
US 7684109B2 · Godshalk et al. · 2010 [cited by applicant]
US 7728483B2 · Tanaka · 2010 [cited by applicant]
US 7868519B2 · Umeda · 2011 [cited by applicant]
US 7941103B2 · Iwamoto et al. · 2011 [cited by applicant]
US 7965015B2 · Tai et al. · 2011 [cited by applicant]
US 8278802B1 · Lee et al. · 2012 [cited by applicant]
US 8294330B1 · Abbott et al. · 2012 [cited by applicant]
US 8344815B2 · Yamanaka et al. · 2013 [cited by applicant]
US 8816567B2 · Zuo et al. · 2014 [cited by applicant]
US 8829766B2 · Milyutin et al. · 2014 [cited by applicant]
US 8932686B2 · Hayakawa et al. · 2015 [cited by applicant]
US 9093979B2 · Wang · 2015 [cited by applicant]
US 9112134B2 · Takahashi · 2015 [cited by applicant]
US 9130145B2 · Martin et al. · 2015 [cited by applicant]
US 9148121B2 · Inoue · 2015 [cited by applicant]
US 9154111B2 · Bradley · 2015 [cited by applicant]
US 9219466B2 · Meltaus et al. · 2015 [cited by applicant]
US 9240768B2 · Nishihara et al. · 2016 [cited by applicant]
US 9276557B1 · Nordquist et al. · 2016 [cited by applicant]
US 9369105B1 · Li et al. · 2016 [cited by applicant]
US 9425765B2 · Rinaldi · 2016 [cited by applicant]
US 9525398B1 · Olsson · 2016 [cited by applicant]
US 9640750B2 · Nakanishi et al. · 2017 [cited by applicant]
US 9748923B2 · Kando et al. · 2017 [cited by applicant]
US 9762202B2 · Thalmayr et al. · 2017 [cited by applicant]
US 9780759B2 · Kimura et al. · 2017 [cited by applicant]
US 9837984B2 · Khlat et al. · 2017 [cited by applicant]
US 10079414B2 · Guyette et al. · 2018 [cited by applicant]
US 10187039B2 · Komatsu et al. · 2019 [cited by applicant]
US 10200013B2 · Bower et al. · 2019 [cited by applicant]
US 10211806B2 · Bhattacharjee · 2019 [cited by applicant]
US 10284176B1 · Solal · 2019 [cited by applicant]
US 10389391B2 · Ito · 2019 [cited by applicant]
US 10476469B2 · Gong et al. · 2019 [cited by applicant]
US 10491192B1 · Plesski et al. · 2019 [cited by applicant]
US 10601392B2 · Plesski et al. · 2020 [cited by applicant]
US 10637438B2 · Garcia et al. · 2020 [cited by applicant]
US 10644674B2 · Takamine · 2020 [cited by applicant]
US 10756697B2 · Plesski et al. · 2020 [cited by applicant]
US 10790802B2 · Yantchev et al. · 2020 [cited by applicant]
US 10797675B2 · Plesski · 2020 [cited by applicant]
US 10812048B2 · Nosaka · 2020 [cited by applicant]
US 10819309B1 · Turner et al. · 2020 [cited by applicant]
US 10826462B2 · Plesski et al. · 2020 [cited by applicant]
US 10868510B2 · Yantchev et al. · 2020 [cited by applicant]
US 10868512B2 · Garcia et al. · 2020 [cited by applicant]
US 10868513B2 · Yantchev · 2020 [cited by applicant]
US 10911017B2 · Plesski · 2021 [cited by applicant]
US 10911021B2 · Turner et al. · 2021 [cited by applicant]
US 10911023B2 · Turner · 2021 [cited by applicant]
US 10917070B2 · Plesski et al. · 2021 [cited by applicant]
US 10917072B2 · McHugh et al. · 2021 [cited by applicant]
US 10985726B2 · Plesski · 2021 [cited by applicant]
US 10985728B2 · Plesski et al. · 2021 [cited by applicant]
US 10985730B2 · Garcia · 2021 [cited by applicant]
US 10992282B1 · Plesski et al. · 2021 [cited by applicant]
US 10992283B2 · Plesski et al. · 2021 [cited by applicant]
US 10992284B2 · Yantchev · 2021 [cited by applicant]
US 10998877B2 · Turner et al. · 2021 [cited by applicant]
US 10998882B2 · Yantchev et al. · 2021 [cited by applicant]
US 11003971B2 · Plesski et al. · 2021 [cited by applicant]
US 11114996B2 · Plesski et al. · 2021 [cited by applicant]
US 11114998B2 · Garcia et al. · 2021 [cited by applicant]
US 11139794B2 · Plesski et al. · 2021 [cited by applicant]
US 11143561B2 · Plesski · 2021 [cited by applicant]
US 11146231B2 · Plesski · 2021 [cited by applicant]
US 11146232B2 · Yandrapalli et al. · 2021 [cited by applicant]
US 11146238B2 · Hammond et al. · 2021 [cited by applicant]
US 11146244B2 · Yantchev · 2021 [cited by applicant]
US 11165407B2 · Yantchev · 2021 [cited by applicant]
US 11171629B2 · Turner · 2021 [cited by applicant]
US 11201601B2 · Yantchev et al. · 2021 [cited by applicant]
US 11206009B2 · Plesski · 2021 [cited by applicant]
US 11228296B2 · Dyer · 2022 [cited by applicant]
US 11239816B1 · McHugh · 2022 [cited by applicant]
US 11239822B2 · Garcia · 2022 [cited by applicant]
US 11264966B2 · Yantchev · 2022 [cited by applicant]
US 11264969B1 · Fenzi · 2022 [cited by applicant]
US 11271539B1 · Yantchev · 2022 [cited by applicant]
US 11271540B1 · Yantchev · 2022 [cited by applicant]
US 11283424B2 · Turner · 2022 [cited by applicant]
US 11309865B1 · Guyette · 2022 [cited by applicant]
US 11323089B2 · Turner · 2022 [cited by applicant]
US 11323090B2 · Garcia · 2022 [cited by applicant]
US 11323091B2 · Kay · 2022 [cited by applicant]
US 11323095B2 · Garcia · 2022 [cited by applicant]
US 11323096B2 · Yantchev · 2022 [cited by applicant]
US 11349450B2 · Yantchev · 2022 [cited by applicant]
US 11349452B2 · Yantchev · 2022 [cited by applicant]
US 11356077B2 · Garcia · 2022 [cited by applicant]
US 11368139B2 · Garcia · 2022 [cited by applicant]
US 11374549B2 · Yantchev · 2022 [cited by applicant]
US 11381221B2 · McHugh · 2022 [cited by applicant]
US 20020079986A1 · Ruby et al. · 2002 [cited by applicant]
US 20020130736A1 · Mukai · 2002 [cited by applicant]
US 20020158714A1 · Kaitila et al. · 2002 [cited by applicant]
US 20020189062A1 · Lin et al. · 2002 [cited by applicant]
US 20030042998A1 · Edmonson · 2003 [cited by applicant]
US 20030080831A1 · Naumenko et al. · 2003 [cited by applicant]
US 20030199105A1 · Kub et al. · 2003 [cited by applicant]
US 20040041496A1 · Imai et al. · 2004 [cited by applicant]
US 20040100164A1 · Murata · 2004 [cited by applicant]
US 20040207033A1 · Koshido · 2004 [cited by applicant]
US 20040207485A1 · Kawachi et al. · 2004 [cited by applicant]
US 20040261250A1 · Kadota et al. · 2004 [cited by applicant]
US 20050077982A1 · Funasaka · 2005 [cited by applicant]
US 20050185026A1 · Noguchi et al. · 2005 [cited by applicant]
US 20050218488A1 · Matsuo · 2005 [cited by applicant]
US 20050264136A1 · Tsutsumi et al. · 2005 [cited by applicant]
US 20060131731A1 · Sato · 2006 [cited by applicant]
US 20060152107A1 · Tanaka · 2006 [cited by applicant]
US 20060179642A1 · Kawamura · 2006 [cited by applicant]
US 20070090898A1 · Kando et al. · 2007 [cited by applicant]
US 20070115079A1 · Kubo et al. · 2007 [cited by applicant]
US 20070182510A1 · Park · 2007 [cited by applicant]
US 20070188047A1 · Tanaka · 2007 [cited by applicant]
US 20070194863A1 · Shibata et al. · 2007 [cited by applicant]
US 20070267942A1 · Matsumoto et al. · 2007 [cited by applicant]
US 20070278898A1 · Miura et al. · 2007 [cited by applicant]
US 20080018414A1 · Inoue et al. · 2008 [cited by applicant]
US 20080246559A1 · Ayazi · 2008 [cited by applicant]
US 20080297280A1 · Thalhammer · 2008 [cited by applicant]
US 20090273415A1 · Frank · 2009 [cited by applicant]
US 20090315640A1 · Umeda · 2009 [cited by applicant]
US 20100019866A1 · Hara et al. · 2010 [cited by applicant]
US 20100064492A1 · Tanaka · 2010 [cited by applicant]
US 20100123367A1 · Tai et al. · 2010 [cited by applicant]
US 20100223999A1 · Onoe · 2010 [cited by applicant]
US 20100301703A1 · Chen et al. · 2010 [cited by applicant]
US 20110018389A1 · Fukano et al. · 2011 [cited by applicant]
US 20110018654A1 · Bradley et al. · 2011 [cited by applicant]
US 20110102107A1 · Onzuka · 2011 [cited by applicant]
US 20110109196A1 · Goto et al. · 2011 [cited by applicant]
US 20110254406A1 · Yamane · 2011 [cited by applicant]
US 20110278993A1 · Iwamoto · 2011 [cited by applicant]
US 20120073390A1 · Zaghloul et al. · 2012 [cited by applicant]
US 20120105165A1 · Yamanaka · 2012 [cited by applicant]
US 20120198672A1 · Ueda et al. · 2012 [cited by applicant]
US 20120286900A1 · Kadota et al. · 2012 [cited by applicant]
US 20120326809A1 · Tsuda · 2012 [cited by applicant]
US 20130057360A1 · Meltaus et al. · 2013 [cited by applicant]
US 20130127551A1 · Yamanaka · 2013 [cited by applicant]
US 20130234805A1 · Takahashi · 2013 [cited by applicant]
US 20130271238A1 · Onda · 2013 [cited by applicant]
US 20130278609A1 · Stephanou et al. · 2013 [cited by applicant]
US 20130321100A1 · Wang · 2013 [cited by applicant]
US 20140009032A1 · Takahashi et al. · 2014 [cited by applicant]
US 20140009247A1 · Moriya · 2014 [cited by applicant]
US 20140113571A1 · Fujiwara et al. · 2014 [cited by applicant]
US 20140130319A1 · Iwamoto · 2014 [cited by applicant]
US 20140145556A1 · Kadota · 2014 [cited by applicant]
US 20140151151A1 · Reinhardt · 2014 [cited by applicant]
US 20140152145A1 · Kando et al. · 2014 [cited by applicant]
US 20140173862A1 · Kando et al. · 2014 [cited by applicant]
US 20140225684A1 · Kando et al. · 2014 [cited by applicant]
US 20140312994A1 · Meltaus et al. · 2014 [cited by applicant]
US 20150014795A1 · Franosch · 2015 [cited by applicant]
US 20150042417A1 · Onodera et al. · 2015 [cited by applicant]
US 20150165479A1 · Lasiter et al. · 2015 [cited by applicant]
US 20150319537A1 · Perois et al. · 2015 [cited by applicant]
US 20150333730A1 · Meltaus et al. · 2015 [cited by applicant]
US 20150365067A1 · Hori et al. · 2015 [cited by applicant]
US 20160028367A1 · Shealy · 2016 [cited by applicant]
US 20160049920A1 · Kishino · 2016 [cited by applicant]
US 20160087187A1 · Burak · 2016 [cited by applicant]
US 20160182009A1 · Bhattacharjee · 2016 [cited by applicant]
US 20160285430A1 · Kikuchi et al. · 2016 [cited by applicant]
US 20160301382A1 · Iwamoto · 2016 [cited by applicant]
US 20170063332A1 · Gilbert et al. · 2017 [cited by applicant]
US 20170104470A1 · Koelle et al. · 2017 [cited by applicant]
US 20170179225A1 · Kishimoto · 2017 [cited by applicant]
US 20170179928A1 · Raihn et al. · 2017 [cited by applicant]
US 20170187352A1 · Omura · 2017 [cited by applicant]
US 20170214381A1 · Bhattacharjee · 2017 [cited by applicant]
US 20170214387A1 · Burak et al. · 2017 [cited by applicant]
US 20170222617A1 · Mizoguchi · 2017 [cited by applicant]
US 20170222622A1 · Solal et al. · 2017 [cited by applicant]
US 20170290160A1 · Takano et al. · 2017 [cited by applicant]
US 20170370791A1 · Nakamura et al. · 2017 [cited by applicant]
US 20180005950A1 · Watanabe · 2018 [cited by applicant]
US 20180013405A1 · Takata · 2018 [cited by applicant]
US 20180026603A1 · Iwamoto · 2018 [cited by applicant]
US 20180033952A1 · Yamamoto · 2018 [cited by applicant]
US 20180041191A1 · Park · 2018 [cited by applicant]
US 20180062615A1 · Kato et al. · 2018 [cited by applicant]
US 20180062617A1 · Yun et al. · 2018 [cited by applicant]
US 20180123016A1 · Gong · 2018 [cited by applicant]
US 20180191322A1 · Chang et al. · 2018 [cited by applicant]
US 20180262179A1 · Goto · 2018 [cited by applicant]
US 20180278227A1 · Hurwitz · 2018 [cited by applicant]
US 20180309426A1 · Guenard · 2018 [cited by applicant]
US 20190007022A1 · Goto et al. · 2019 [cited by applicant]
US 20190044498A1 · Kawasaki · 2019 [cited by applicant]
US 20190068164A1 · Houlden et al. · 2019 [cited by applicant]
US 20190123721A1 · Takamine · 2019 [cited by applicant]
US 20190131953A1 · Gong · 2019 [cited by applicant]
US 20190148621A1 · Feldman et al. · 2019 [cited by applicant]
US 20190181825A1 · Schmalzl et al. · 2019 [cited by applicant]
US 20190181833A1 · Nosaka · 2019 [cited by applicant]
US 20190190487A1 · Yasuda · 2019 [cited by applicant]
US 20190207583A1 · Miura et al. · 2019 [cited by applicant]
US 20190245518A1 · Ito · 2019 [cited by applicant]
US 20190253038A1 · Houlden · 2019 [cited by applicant]
US 20190273480A1 · Lin et al. · 2019 [cited by applicant]
US 20190305746A1 · Ota · 2019 [cited by applicant]
US 20190348966A1 · Campanella-Pineda · 2019 [cited by applicant]
US 20190379351A1 · Miyamoto et al. · 2019 [cited by applicant]
US 20190386633A1 · Plesski · 2019 [cited by applicant]
US 20190386635A1 · Plesski et al. · 2019 [cited by applicant]
US 20190386636A1 · Plesski et al. · 2019 [cited by applicant]
US 20190386638A1 · Kimura et al. · 2019 [cited by applicant]
US 20200007110A1 · Konaka et al. · 2020 [cited by applicant]
US 20200021271A1 · Plesski · 2020 [cited by applicant]
US 20200021272A1 · Segovia Fernandez et al. · 2020 [cited by applicant]
US 20200036357A1 · Mimura · 2020 [cited by applicant]
US 20200083861A1 · Matsuo · 2020 [cited by applicant]
US 20200228087A1 · Michigami et al. · 2020 [cited by applicant]
US 20200235719A1 · Yantchev et al. · 2020 [cited by applicant]
US 20200259480A1 · Pensala · 2020 [cited by applicant]
US 20200274520A1 · Shin · 2020 [cited by applicant]
US 20200313645A1 · Caron · 2020 [cited by applicant]
US 20200350891A1 · Turner · 2020 [cited by applicant]
US 20210013859A1 · Turner et al. · 2021 [cited by applicant]
US 20210152154A1 · Tang · 2021 [cited by applicant]
US 20210265978A1 · Plesski et al. · 2021 [cited by applicant]
US 20210273631A1 · Jachowski et al. · 2021 [cited by applicant]
US 20210328574A1 · Garcia · 2021 [cited by applicant]
US 20210351762A1 · Dyer et al. · 2021 [cited by applicant]
US 20220103160A1 · Jachowski et al. · 2022 [cited by applicant]
US 20220116014A1 · Poirel · 2022 [cited by applicant]
US 20220149808A1 · Dyer et al. · 2022 [cited by applicant]
CN 106788318A · 2017 [cited by applicant]
CN 110417373A · 2019 [cited by applicant]
CN 210431367U · 2020 [cited by applicant]
JP H10209804A · 1998 [cited by applicant]
JP 2001244785A · 2001 [cited by applicant]
JP 2002300003A · 2002 [cited by applicant]
JP 2003078389A · 2003 [cited by applicant]
JP 2004096677A · 2004 [cited by applicant]
JP 2004129222A · 2004 [cited by applicant]
JP 2004304622A · 2004 [cited by applicant]
JP 2006173557A · 2006 [cited by applicant]
JP 2007251910A · 2007 [cited by applicant]
JP 2007329584A · 2007 [cited by applicant]
JP 2010062816A · 2010 [cited by applicant]
JP 2010233210A · 2010 [cited by applicant]
JP 2013528996A · 2013 [cited by applicant]
JP 2015054986A · 2015 [cited by applicant]
JP 2016001923A · 2016 [cited by applicant]
JP 2018166259A · 2018 [cited by applicant]
JP 2018207144A · 2018 [cited by applicant]
JP 2020113939A · 2020 [cited by applicant]
WO 2015098694A1 · 2015 [cited by applicant]
WO 2016017104 · 2016 [cited by applicant]
WO 2016052129A1 · 2016 [cited by applicant]
WO 2016147687A1 · 2016 [cited by applicant]
WO 2018003268A1 · 2018 [cited by applicant]
WO 2018003273 · 2018 [cited by applicant]
WO 2018163860A1 · 2018 [cited by applicant]
International Search Report and Written Opinion in PCT/US2022/081068, mailed Apr. 18, 2023, 17 pages. [cited by applicant]
Office Action in JP2021175220, mailed Apr. 25, 2023, 10 pages. [cited by applicant]
A. C. Guyette, “Theory and Design of Intrinsically Switched Multiplexers With Optimum Phase Linearity,” in IEEE Transactions on Microwave Theory and Techniques, vol. 61, No. 9, pp. 3254-3264, Sep. 2013, doi: 10.1109/TMT… [cited by applicant]
Acoustic Properties of Solids ONDA Corporation 592 Weddell Drive, Sunnyvale, CA 94089, Apr. 11, 2003, pp. 5 (Year 2003). 2003. [cited by applicant]
Bahreyni, B. Fabrication and Design of Resonant Microdevices Andrew William, Inc. 2018, NY (Year 2008). 2008. [cited by applicant]
Bai et al. “The Simulation of Resonant Mode and Effective Electromechanical Coupling Coefficient of Lithium Niobate Crystal with Different Orientations”, J. Phys.: Conf. Ser. 1637 012064, 2020 (Year: 2020). [cited by applicant]
Buchanan “Ceramic Materials for Electronics” 3rd Edition, first published in 2004 by Marcel Dekker, Inc. pp. 496 (Year 2004). Jan. 2004. [cited by applicant]
Ekeom, D. & Dubus, Bertrand & Volatier, A . . . (2006). Solidly mounted resonator (SMR) Fem-Bem simulation. 1474-1477. 10.1109/ULTSYM.2006.371. [cited by applicant]
G. Manohar, “Investigation of Various Surface Acoustic Wave Design Configurations for Improved Sensitivity.” Doctoral dissertation, University of South Florida, USA, Jan. 2012, 7 pages. [cited by applicant]
Gnewuch, et al. “Broadband monolithic acousto-optic tunable filter”, Mar. 1, 2000 / vol. 25, No. 5 / Optics Letters (Year: 2000). [cited by applicant]
Kadota et al. “5.4 Ghz Lamb Wave Resonator on LiNbO3 Thin Crystal Plate and Its Application,” published in Japanese Journal of Applied Physics 50 (2011) 07HD11. (Year: 2011) 2011. [cited by applicant]
Kadota et al., “Ultra-Wideband Ladder Filter Using SH0 Plate Wave in Thin LiNbO3 Plate and Its Application to Tunable Filter”, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 62, No. 5, May… [cited by applicant]
Lin et al., “A novel weighted method for layered SAW filters using slanted finger interdigital transducers”, J. Phys. D: Appl. Phys. 39 (2006) pp. 466-470 (Year: 2006). [cited by applicant]
M. Kadota et al.; “Ultrawide Band Ladder Filter using SH0 plate Wave in Thin LiNb03 Plate and its Application”; 2014 IEEE International Ultrasonics Symposium Proceedings, 2014, pp. 2031-2034. (Year: 2014). [cited by applicant]
M. Kadota, S. Tanaka, “Wideband acoustic wave resonators composed of hetero acoustic layer structure,” Japanese Journal of Applied Physics, vol. 57, No. 7S1. Published Jun. 5, 2018. 5 pages. [cited by applicant]
M.-H. Li et al.; “Temperature Stability Analysis of Thin-Film Lithium Niobate SH0 Plate Wave Resonators”; Journal of Microelectromechanical Systems, vol. 28, No. 5, Oct. 2019, pp. 799-809. (Year: 2019). [cited by applicant]
Material Properties of Tibtech Innovations, © 2018 TIBTECH Innovations (Year 2018). 2018. [cited by applicant]
Merriam Webster, dictionary meaning of the word “diaphragm”, since 1828, Merriam Webster (Year: 1828), 1828. [cited by applicant]
Mizutaui, K. and Toda, K., “Analysis of lamb wave propagation characteristics in rotated Ycut Xpropagation LiNbO3 plates.” Electron. Comm. Jpn. Pt. 1, 69, No. 4 (1986): 47-55. doi:10.1002/ecja.4410690406. [cited by applicant]
Moussa et al. Review on Triggered Liposomal Drug Delivery with a Focus on Ultrasound 2015, Bentham Science Publishers, pp. 16 (Year 2005) 2005. [cited by applicant]
Namdeo et al. “Simulation on Effects of Electrical Loading due to Interdigital Transducers in Surface Acoustic Wave Resonator”, published in Procedia Engineering 64 ( 2013) of Science Direct pp. 322-330 (Year: 2013) 201… [cited by applicant]
Naumenko et al., “Optimal orientations of Lithium Niobate for resonator SAW filters”, 2003 IEEE Ultrasonics Symposium—pp. 2110-2113. (Year: 2003). [cited by applicant]
R. Olsson III, K. Hattar et al. “A high electromechanical coupling coefficient SH0 Lamb wave lithiumniobate micromechanical resonator and a method for fabrication” Sensors and Actuators A: Physical, vol. 209, Mar. 1, 20… [cited by applicant]
Reinhardt, “Acoustic filters based on thin single crystal LiNbQ,3 films: status and prospects”, 2014 IEEE International Ultrasonics Symposium Proceedings, pp. 773-781 (Year: 2014). [cited by applicant]
Rodriguez-Madrid et al., “Super-High-Frequency SAW Resonators on AIN/Diamond”, IEEE Electron Device Letters, vol. 33, No. 4, Apr. 2012, pp. 495-497. Year: 2012), 2012. [cited by applicant]
Safari et al. “Piezoelectric for Transducer Applications” published by Elsevier Science Ltd., pp. 4 (Year: 2000). 2020. [cited by applicant]
Santosh, G. , Surface acoustic wave devices on silicon using patterned and thin film ZnO, Ph.D. thesis, Feb. 2016, Indian Institute of technology Guwahati, Assam, India Feb. 2016. [cited by applicant]
Sinha et al., “Slanted finger Inter-digital Transducers for the design of improved performance small shape factor mid-bandwidth SAW filters”, IEEE MTT-S International Microwave and RF Conference, 2013. (Year: 2013). [cited by applicant]
Sorokin et al. Study of Microwave Acoustic Attenuation in a Multi-frequency Bulk Acoustic Resonator Based on a Synthetic Diamond Single Crystal Published in Acoustical Physics, vol. 61, No. 6, 2015 pp. 675 (Year 2015) J… [cited by applicant]
T. Takai, H. Iwamoto, et al., “I.H.P.Saw Technology and its Application to Microacoustic Components (Invited).” 2017 IEEE International Ultrasonics Symposium, Sep. 6-9, 2017. pp. 1-8. [cited by applicant]
USPTO/ISA, International Search Report and Written Opinion for PCT Application No. PCT/US2019/036433 dated Aug. 29, 2019. [cited by applicant]
USPTO/ISA, International Search Report and Written Opinion for PCT Application No. PCT/US2019/058632 dated Jan. 17, 2020. [cited by applicant]
USPTO/ISA, International Search Report and Written Opinion for PCT Application No. PCT/US2020/45654 dated Oct. 29, 2020. [cited by applicant]
USPTO/ISA, International Search Report and Written Opinion for PCT Application No. PCT/US2021/024824 dated Jul. 27, 2021, 9 total pages. [cited by applicant]
USPTO/ISA, International Search Report and Written Opinion for PCT Application No. PCT/US2021/048505 dated Dec. 1, 2021, 11 total pages. [cited by applicant]
Wu et al., “Frequency band-gap measurement of two-dimensional air/silicon phononic crystals using layered slanted finger interdigital transducers”, J. Appl. Phys. 97, 094916, 2005 (Year: 2005). [cited by applicant]
Y. Yang, A. Gao et al. “5 GHZ Lithium Niobate MEMS Resonators With High FOM of 153”, 2017 IEEE 30th International Conference in Micro Electro Mechanical Systems (MEMS). Jan. 22-26, 2017. pp. 942-945. [cited by applicant]
Y. Yang, R. Lu et al. “Towards Ka Band Acoustics: Lithium Niobat Asymmetrical Mode Piezoelectric MEMS Resonators”, Department of Electrical and Computer Engineering University of Illinois at Urbana-Champaign, May 2018. … [cited by applicant]
Yanson Yang, Ruochen Lu, Songbin Gong, High Q Antisymmetric Mode Lithium Niobate MEMS Resonators With Spurious Mitigation, Journal of Microelectromechanical Systems, vol. 29, No. 2, Apr. 2020. Apr. 2, 2020. [cited by applicant]
Yu-Po Wong, Luyan Qiu, Naoto Matsuoka, Ken-ya Hashimoto, Broadband Piston Mode Operation for First-order Antisymmetric Mode Resonators, 2020 IEEE International Ultrasonics Symposium, Sep. 2020. Sep. 2020. [cited by applicant]
Zou, Jie “High-Performance Aluminum Nitride Lamb Wave Resonators for RF Front-End Technology” University of California, Berkeley, Summer 2015, pp. 63 (Year 2015) Jan. 2015. [cited by applicant]
Gorisse et al., “Lateral Field Excitation of membrane-based Aluminum Nitride resonators,” Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS), May 2011, 5 pages. [cited by applicant]
Pang et al., “Self-Aligned Lateral Field Excitation Film Acoustic Resonator with Very Large Electromechanical Coupling,” IEEE International Ultrasonics, Ferroelectrics, and Frequency Control Joint 50th Anniversary Confe… [cited by applicant]
Yandrapalli et al., “Toward Band n78 Shear Bulk Acoustic Resonators Using Crystalline Y-Cut Lithium Niobate Films With Spurious Suppression,” Journal of Microelectromechanical System, Aug. 2023, vol. 32, No. 4, pp. 327-… [cited by applicant]