Midair semiconductor device and manufacturing method of the same
A midair semiconductor device includes a Si substrate provided with an element part on its front surface side. An opening is formed in the Si substrate in such a manner that a rear surface of the element part is exposed. The opening is provided below the element part while penetrating through the Si substrate. The front surface side of the Si substrate is sealed with a first cap part such as a Si cap such that a portion above the element part is brought into a midair state. A second cap part such as a Si cap is bonded to the rear surface side of the Si substrate so that the opening is sealed.
1. A method for manufacturing a midair semiconductor device, comprising:
forming a plurality of element parts on a front surface side of a semiconductor substrate;
bonding a plurality of individually separated cap parts to the semiconductor substrate, respectively, in such a manner that the plurality of element parts are sealed individually;
bonding the semiconductor substrate to a support substrate via a resin protectant which absorbs irregularities caused by the plurality of cap parts;
machining a rear surface of the semiconductor substrate bonded to the support substrate; and
cutting the machined semiconductor substrate, according to the plurality of element parts to fabricate a midair semiconductor device in which the element part is sealed with the cap part.