Transversely-excited film bulk acoustic resonator
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on a portion of the piezoelectric plate suspended over a cavity formed in the substrate.
1. A filter device, comprising:
a substrate;
a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate; and
a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, wherein
interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate,
the plurality of resonators includes a shunt resonator and a series resonator,
a first thickness of a first dielectric layer deposited between the fingers of the IDT of the shunt resonator is greater than a second thickness of a second dielectric layer deposited between the fingers of the IDT of the series resonator,
a resonance frequency of the shunt resonator is set, at least in part, by the first thickness,
a resonance frequency of the series resonator is set, at least in part, by the second thickness, and
a difference between the first thickness and the second thickness is sufficient to set the resonance frequency of the shunt resonator at least 140 MHz lower than the resonance frequency of the series resonator.
2. The filter device of claim 1 , wherein all of the plurality of IDTs are configured to excite shear acoustic waves in the piezoelectric plate in response to respective radio frequency signals applied to each IDT.
3. The device of claim 1 , wherein a thickness between the front and back surfaces of the piezoelectric plate is greater than or equal to 200 nm and less than or equal to 1000 nm.
4. The filter device of claim 1 , wherein the one or more cavities formed in the substrate are respective cavities for each of the plurality of IDTs.
5. The filter device of claim 1 , wherein each of the plurality of IDTs has a respective pitch greater than or equal to 2 times the thickness of the piezoelectric plate and less than or equal to 25 times the thickness of the piezoelectric plate.
6. The filter device of claim 1 , wherein
the plurality of resonators includes two or more shunt resonators, and
the first dielectric layer is disposed on the front surface between the fingers of all of the two or more shunt resonators.
7. The filter device of claim 1 , wherein
the plurality of resonators includes two or more series resonators, and
the second dielectric layer is disposed on the front surface between the fingers of all of the two or more series resonators.
8. The filter device of claim 1 , wherein
a z-axis of the piezoelectric plate is normal to the front and back surfaces.
9. The filter device of claim 8 , wherein
all of the plurality of IDTs are oriented such that the fingers of the IDTs are parallel to an x-axis of the piezoelectric plate.
10. A filter device, comprising:
a substrate;
a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate;
a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators including a shunt resonator and a series resonator;
a first dielectric layer having a first thickness deposited over the IDT of the shunt resonator; and
a second dielectric layer having a second thickness deposited over the IDT of the series resonator, wherein
interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate,
a resonance frequency of the shunt resonator is set, at least in part, by the first thickness,
a resonance frequency of the series resonator is set, at least in part, by the second thickness, and
a difference between the first thickness and the second thickness is sufficient to set the resonance frequency of the shunt resonator at least 140 MHz lower than the resonance frequency of the series resonator.
11. The filter device of claim 10 , wherein all of the plurality of IDTs are configured to excite shear acoustic waves in the piezoelectric plate in response to respective radio frequency signals applied to each IDT.
12. The device of claim 10 , wherein a thickness between the front and back surfaces of the piezoelectric plate is greater than or equal to 200 nm and less than or equal to 1000 nm.
13. The filter device of claim 10 , wherein the one or more cavities formed in the substrate are respective cavities for each of the plurality of IDTs.
14. The filter device of claim 10 , wherein each of the plurality of IDTs has a respective pitch greater than or equal to 2 times the thickness of the piezoelectric plate and less than or equal to 25 times the thickness of the piezoelectric plate.
15. The filter device of claim 10 , wherein
the plurality of resonators includes two or more shunt resonators, and
the first dielectric layer is disposed on the front surface over all of the two or more shunt resonators.
16. The filter device of claim 10 , wherein
the plurality of resonators includes two or more series resonators, and
the second dielectric layer is disposed on the front surface over all of the two or more series resonators.
17. The filter device of claim 10 , wherein
a z-axis of the piezoelectric plate is normal to the front and back surfaces.
18. The filter device of claim 17 , wherein
all of the plurality of IDTs are oriented such that the fingers of the IDTs are parallel to an x-axis of the piezoelectric plate.
19. A filter device, comprising:
a substrate;
a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate; and
a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, wherein
interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate,
the plurality of resonators includes a shunt resonator and a series resonator, and
a first thickness of a first dielectric layer deposited between the fingers of the IDT of the shunt resonator is greater than a second thickness of a second dielectric layer deposited between the fingers of the IDT of the series resonator,
the first and second dielectric layers are SiO2, and
a difference between the first thickness and the second thickness is greater than or equal to 30 nm.
20. The filter device of claim 19 , wherein all of the plurality of IDTs are configured to excite shear acoustic waves in the piezoelectric plate in response to respective radio frequency signals applied to each IDT.
21. The device of claim 19 , wherein a thickness between the front and back surfaces of the piezoelectric plate is greater than or equal to 200 nm and less than or equal to 1000 nm.
22. The filter device of claim 19 , wherein the one or more cavities formed in the substrate are respective cavities for each of the plurality of IDTs.
23. The filter device of claim 19 , wherein each of the plurality of IDTs has a respective pitch greater than or equal to 2 times the thickness of the piezoelectric plate and less than or equal to 25 times the thickness of the piezoelectric plate.
24. The filter device of claim 19 , wherein
the plurality of resonators includes two or more shunt resonators, and
the first dielectric layer is disposed on the front surface between the fingers of all of the two or more shunt resonators.
25. The filter device of claim 19 , wherein
the plurality of resonators includes two or more series resonators, and
the second dielectric layer is disposed on the front surface between the fingers of all of the two or more series resonators.
26. The filter device of claim 19 , wherein
a z-axis of the piezoelectric plate is normal to the front and back surfaces.
27. The filter device of claim 26 , wherein
all of the plurality of IDTs are oriented such that the fingers of the IDTs are parallel to an x-axis of the piezoelectric plate.
28. A filter device, comprising:
a substrate;
a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate;
a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators including a shunt resonator and a series resonator;
a first dielectric layer having a first thickness deposited over the IDT of the shunt resonator; and
a second dielectric layer having a second thickness less than the first thickness deposited over the IDT of the series resonator, wherein
interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate,
the first and second dielectric layers are at least one of SiO2 and Si3N4, and
a difference between the first thickness and the second thickness is greater than or equal to 30 nm.
29. The filter device of claim 28 , wherein all of the plurality of IDTs are configured to excite shear acoustic waves in the piezoelectric plate in response to respective radio frequency signals applied to each IDT.
30. The device of claim 28 , wherein a thickness between the front and back surfaces of the piezoelectric plate is greater than or equal to 200 nm and less than or equal to 1000 nm.
31. The filter device of claim 28 , wherein the one or more cavities formed in the substrate are respective cavities for each of the plurality of IDTs.
32. The filter device of claim 28 , wherein each of the plurality of IDTs has a respective pitch greater than or equal to 2 times the thickness of the piezoelectric plate and less than or equal to 25 times the thickness of the piezoelectric plate.
33. The filter device of claim 28 , wherein
the plurality of resonators includes two or more shunt resonators, and
the first dielectric layer is disposed on the front surface over all of the two or more shunt resonators.
34. The filter device of claim 28 , wherein
the plurality of resonators includes two or more series resonators, and
the second dielectric layer is disposed on the front surface over all of the two or more series resonators.
35. The filter device of claim 28 , wherein
a z-axis of the piezoelectric plate is normal to the front and back surfaces.
36. The filter device of claim 35 , wherein
all of the plurality of IDTs are oriented such that the fingers of the IDTs are parallel to an x-axis of the piezoelectric plate.